公开(公告)号：US20180275530A1

公开(公告)日：2018-09-27

申请号：US15925325

申请日：2018-03-19

Applicant: KLA-Tencor Corporation

Inventor： Daniel Kandel ,  Vladimir Levinski ,  Guy Cohen

IPC: G03F7/20

Abstract: A system for measuring overlay from a multi-layer overlay target for use in imaging based metrology is disclosed. The system is configured for measuring overlay from a multi-layer overly target that includes three or more target structures, wherein a first target structure is disposed in a first process layer, a second target structure is disposed in a second process layer, and at least a third target structure is disposed in at least a third process layer. The system includes an illumination source configured to illuminate the target structures of the multi-layer overlay target, a detector configured to collect light reflected from the target structures, and one or more processors configured to execute a set of program instructions to determine overlay error between two or more structures based on the collected light from the plurality of targets.

公开(公告)号：US09875946B2

公开(公告)日：2018-01-23

申请号：US14252323

申请日：2014-04-14

Applicant: KLA-Tencor Corporation

Inventor： Andrei V. Shchegrov ,  Jonathan M. Madsen ,  Stilian Ivanov Pandev ,  Ady Levy ,  Daniel Kandel ,  Michael E. Adel ,  Ori Tadmor

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and systems for performing semiconductor metrology directly on device structures are presented. A measurement model is created based on measured training data collected from at least one device structure. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measurement data collected from device structures of other wafers. In some examples, measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement may be derived from measurements performed by a combination of multiple, different measurement techniques.

公开(公告)号：US09841689B1

公开(公告)日：2017-12-12

申请号：US14832750

申请日：2015-08-21

Applicant: KLA-TENCOR CORPORATION

Inventor： Vladimir Levinski ,  Daniel Kandel ,  Yoel Feler ,  Nadav Gutman

IPC: G02B27/52 ,  G03F7/20

CPC classification number: G03F7/70641 ,  G03F7/70283 ,  G03F7/70558

Abstract: A method is provided that comprises printing FEM wafers having different predefined focus offsets and multiple corresponding sites, measuring signals from the sites, and quantifying a focus inaccuracy by comparing the measured signals from the corresponding sites across the wafers.

公开(公告)号：US09739702B2

公开(公告)日：2017-08-22

申请号：US14161398

申请日：2014-01-22

Applicant: KLA-Tencor Corporation

Inventor： Barak Bringoltz ,  Daniel Kandel ,  Yoel Feler ,  Noam Sapiens ,  Irina Paykin ,  Alexander Svizher ,  Meir Aloni ,  Guy Ben Dov ,  Hadar Shalmoni ,  Vladimir Levinski

IPC: G01B11/27 ,  G01N21/01 ,  G03F7/20 ,  G02B27/42 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956

CPC classification number: G01N21/01 ,  G01B11/272 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G01N2201/068 ,  G02B27/4255 ,  G02B27/4272 ,  G03F7/70633 ,  G03F7/70683

Abstract: Metrology methods, systems and targets are provided, which implement a side by side paradigm. Adjacent cells with periodic structures are used to extract the overlay error, e.g., by introducing controllable phase shifts or image shifts which enable algorithmic computation of the overlay. The periodic structures are designed to exhibit a rotational symmetry to support the computation and reduce errors.

公开(公告)号：US09678421B2

公开(公告)日：2017-06-13

申请号：US14795549

申请日：2015-07-09

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Levinski ,  Feler Yoel ,  Daniel Kandel

IPC: G03F1/42 ,  G06F17/50 ,  G03F7/20 ,  H01L21/66

CPC classification number: G03F1/42 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683 ,  G06F17/5072 ,  H01L22/30

Abstract: Metrology targets, target design methods and metrology methods are provided. Metrology targets comprise target elements belonging to two or more target element types. Each target element type comprises unresolved features which offset specified production parameters to a specified extent and thus provide sensitivity monitoring and optimization tools for process parameters such as focus and dose.

公开(公告)号：US20160313658A1

公开(公告)日：2016-10-27

申请号：US15198902

申请日：2016-06-30

Applicant: KLA-TENCOR CORPORATION

Inventor： Tal Marciano ,  Barak Bringoltz ,  Evgeni Gurevich ,  Ido Adam ,  Ze'ev Lindenfeld ,  Zeng Zhao ,  Yoel Feler ,  Daniel Kandel ,  Nadav Carmel ,  Amnon Manassen ,  Nuriel Amir ,  Oded Kaminsky ,  Tal Yaziv ,  Ofer Zaharan ,  Moshe Cooper ,  Roee Sulimarski ,  Tom Leviant ,  Noga Sella ,  Boris Efraty ,  Lilach Saltoun ,  Amir Handelman ,  Eltsafon Ashwal ,  Ohad Bachar

IPC: G03F9/00

Abstract: Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.

Abstract translation: 提供了用于导出计量度量对配方参数的部分连续依赖性的方法，分析衍生依赖性，根据分析确定计量配方，并根据确定的配方进行计量测量。 依赖性可以以景观的形式进行分析，例如灵敏度景观，其中检测到低分辨率或零误差的低灵敏度和/或点或等值线的区域，分析，数字或实验，并用于配置测量参数，硬件 并达到高测量精度。 根据其对灵敏度景观的影响分析过程变化，并且这些效应用于进一步表征过程变化，优化测量结果，使计量学对于不准确性来源更加鲁棒，并且对于不同的目标更灵活 晶圆和可用的测量条件。

公开(公告)号：US20160253450A1

公开(公告)日：2016-09-01

申请号：US15082152

申请日：2016-03-28

Applicant: KLA-Tencor Corporation

Inventor： Daniel Kandel ,  Mark D. Smith ,  Mark Wagner ,  Eran Amit ,  Myungjun Lee

IPC: G06F17/50 ,  G01N21/93 ,  G01N21/956

Abstract: Metrology methods are provided, which comprise identifying overlay critical patterns in a device design, the overlay critical patterns having an overlay sensitivity to process variation above a specified threshold that depends on design specifications; and using metrology targets that correspond to the identified overlay critical patterns. Alternatively or complementarily, metrology methods comprise identifying yield critical patterns according to a corresponding process window narrowing due to specified process variation, wherein the narrowing is defined by a dependency of edge placement errors (EPEs) of the patterns on process parameters. Corresponding targets and measurements are provided.

Abstract translation: 提供了测量方法，其包括在设备设计中识别重叠关键模式，所述重叠关键模式对于取决于设计规范的指定阈值以上的过程变化具有重叠灵敏度; 并使用与所识别的重叠关键模式相对应的度量目标。 替代地或补充地，计量方法包括根据由于指定的过程变化而变窄的对应过程窗口来识别产出关键模式，其中缩小由模式的边缘放置误差（EPE）对过程参数的依赖性来定义。 提供相应的目标和测量。

公开(公告)号：US20150233705A1

公开(公告)日：2015-08-20

申请号：US14184295

申请日：2014-02-19

Applicant: KLA-Tencor Corporation

Inventor： Barak Bringoltz ,  Mark Ghinovker ,  Daniel Kandel ,  Vladimir Levinski ,  Zeev Bomzon

IPC: G01B11/14 ,  G01B11/24

CPC classification number: G01B11/14 ,  G01B11/2441 ,  G03F7/70633

Abstract: Methods and systems for minimizing of algorithmic inaccuracy in scatterometry overlay (SCOL) metrology are provided. SCOL targets are designed to limit the number of oscillation frequencies in a functional dependency of a resulting SCOL signal on the offset and to reduce the effect of higher mode oscillation frequencies. The targets are segmented in a way that prevents constructive interference of high modes with significant amplitudes, and thus avoids the inaccuracy introduced by such terms into the SCOL signal. Computational methods remove residual errors in a semi-empirical iterative process of compensating for the residual errors algorithmically or through changes in target design.

Abstract translation: 提供了用于最小化散点映射覆盖（SCOL）计量学中算法不准确性的方法和系统。 SCOL目标被设计为将所得到的SCOL信号的功能依赖性的振荡频率的数量限制在偏移上并且降低更高模式振荡频率的影响。 目标被分段，以防止具有显着幅度的高模式的建构性干扰，从而避免了由这些术语引入到SCOL信号中的不准确性。 计算方法在半经验迭代过程中，通过算法或通过目标设计的变化来补偿残差，从而消除残差。

公开(公告)号：US20150219449A1

公开(公告)日：2015-08-06

申请号：US14687074

申请日：2015-04-15

Applicant: KLA-Tencor Corporation

Inventor： Barak Bringoltz ,  Daniel Kandel

IPC: G01B11/27

CPC classification number: G01B11/272 ,  G03F7/70633

Abstract: A method for target measurement is provided which comprises designing a reflection-symmetric target and measuring overlays of the target along at least one reflection symmetry direction of the target. Also, a tool calibration method comprising calibrating a scatterometry measurement tool with respect to a reflection symmetry of a reflection symmetric target. Further provided are methods of measuring scatterometry overlay using first order and zeroth order scatterometry measurements of a reflection-symmetric scatterometry targets. Also, a scatterometry target comprising a reflection-symmetric target having two cells in each of at least two measurement directions, wherein respective cells have different offsets along one measurement direction and similar offsets along other measurement directions. Further, a scatterometry measurement system comprising a reflection symmetric illumination and calibrated to measure reflection symmetric targets. Also, metrology tool comprising an illumination path and a collection path of the tool which are symmetric to reflection symmetries of a target.

Abstract translation: 提供了一种用于目标测量的方法，其包括设计反射对称目标并沿目标的至少一个反射对称方向测量目标的覆盖层。 此外，工具校准方法包括相对于反射对称目标的反射对称性来校准散射测量测量工具。 还提供了使用反射对称散射测量目标的一阶和零级散射测量来测量散射测绘覆盖的方法。 此外，散射测量目标包括在至少两个测量方向中的每一个中具有两个单元的反射对称目标，其中各个单元沿着一个测量方向具有不同的偏移并且沿着其它测量方向具有相似的偏移。 此外，散射测量系统包括反射对称照明并被校准以测量反射对称目标。 此外，计量工具包括与目标的反射对称性对称的工具的照明路径和收集路径。

公开(公告)号：US20150177162A1

公开(公告)日：2015-06-25

申请号：US14500162

申请日：2014-09-29

Applicant: KLA-Tencor Corporation

Inventor： Daniel Kandel ,  Vladimir Levinski ,  Noam Sapiens

IPC: G01N21/956 ,  G03F7/20

CPC classification number: G01N21/95607 ,  G01B11/14 ,  G01B11/24 ,  G01B2210/56 ,  G03F7/70633

Abstract: A method for determining an overlay offset may include, but is not limited to: obtaining a first anti-symmetric differential signal (ΔS1) associated with a first scatterometry cell; obtaining a second anti-symmetric differential signal (ΔS2) associated with a second scatterometry cell and computing an overlay offset from the first anti-symmetric differential (ΔS1) signal associated with the first scatterometry cell and the second anti-symmetric differential signal (ΔS2) associated with the second scatterometry cell.

Abstract translation: 用于确定覆盖偏移的方法可以包括但不限于：获得与第一散射测量单元相关联的第一反对称差分信号（＆Dgr; S1）; 获得与第二散射测量单元相关联的第二反对称差分信号（＆Dgr; S2），并计算与第一散射测量单元和第二反对称差分相关联的第一反对称差分（＆Dgr; S1）信号的叠加偏移 与第二散射测量单元相关联的信号（＆Dgr; S2）。