摘要:
A micellar slug for use in the recovery of oil, the slug containing a hydrocarbon, an aqueous medium, a surfactant, and a cosurfactant. The surfactant contains as an essential component an internal olefin sulfonate having 10 to 26 carbon atoms, a hydroxyalkane sulfonate content of not less than about 40% by weight and a disulfonate content of not more than 20% by weight and said internal olefin sulfonate being desired from the sulfonation of an internal olefin having the general formula:R--CH.dbd.CH--R'wherein R is a straight- or branched-chain alkyl group having 4 to 23 carbon atoms, R' is a straight- or branched-chain alkyl group having 1 to 12 carbon atoms provided that the total carbon atom numbers of R and R' is 8 to 24 and 50% by weight or more of the internal olefins is that having R' with 1 to 4 carbon atoms. This micellar slug has an excellent capability for decreasing an interfacial tension between oil and water and an excellent salinity tolerance and hard-water resistance. Furthermore, the micro-emulsion can be formed from this micellar slug in a wide composition range.
摘要:
A micellar slug for use in the recovery of oil is described, the slug containing a hydrocarbon, an aqueous medium, a surfactant, and a cosurfactant. The surfactant contains, as an essential component, a divalent metal salt of an alpha-olefin sulfonic acid. This micellar slug has an excellent salinity tolerance and hard-water resistance. Furthermore, the micro-emulsion formed from the present micellar slug is maintained stable in a subterranean reservoir formed by alkaline earth metal carbonates and, therefore, the oil recovery efficiency can be improved.
摘要:
A method for fabricating a liquid crystal display device includes providing an LCD panel that includes a photopolymerizable compound in its liquid crystal layer; and forming alignment sustaining layers by polymerizing the photopolymerizable compound in the liquid crystal layer of the LCD panel with the liquid crystal layer irradiated with light and supplied with a voltage simultaneously. The forming the alignment sustaining layers includes the steps of: i) applying a predetermined voltage between a pixel electrode and a counter electrode while a switching element is in ON state; and ii) changing the voltage at a storage capacitor counter electrode into a voltage, of which the polarity is opposite to a voltage at the storage capacitor counter electrode in the step i), after the switching element in ON state has been turned OFF.
摘要:
A lamp including a plurality of light emitting devices and heat sinks can be configured to dissipate heat generated by the plurality of light emitting devices. The heat sinks can be branched into a generally Y-shaped configuration as viewed in a section that includes a primary optical axis of the vehicle lamp. One of the light emitting devices is connected to one of the branched parts of the heat sinks. Another light emitting device is connected to the other branched part of the heat sinks.
摘要:
A liquid crystal display device comprises plural picture elements including a first picture element and a second picture element; plural switching elements; and plural scanning lines. The plural switching elements include a first switching element electrically connected to the first picture element and a second switching element electrically connected to the second picture element. The plural scanning lines include a first scanning line electrically connected to the first switching element and a second scanning line electrically connected to the second switching element. The second scanning line is located between at least part of the first picture element and the first scanning line. The first scanning line is located between at least part of the second picture element and the second scanning line.
摘要:
A voltage generator for nonvolatile memory that generates an applied voltage to be applied to a nonvolatile memory includes a first voltage generator to generate a first voltage corresponding to the applied voltage, a reference voltage generator to generate a reference voltage, a comparator to compare the first voltage with the reference voltage and output a boost operation control signal according to a comparison result, and a booster to generate the applied voltage in a pulse-like voltage waveform by starting or stopping boost operation based on the boost operation control signal. The applied voltage corresponding to the first voltage upon inversion of the boost operation control signal is varied within one pulse-like voltage waveform by varying one of the first voltage and the reference voltage.
摘要:
A non-volatile semiconductor memory device is provided with: a first memory cell including a floating gate transistor; a first bitline connected to a diffusion layer which is used as a source of the first memory cell; a second bitline connected to a diffusion layer which is used as a drain of the first memory cell; a first reference cell including a floating gate transistor; a third bitline electrically isolated from the first bitline and connected to a diffusion layer which is used as a source of the first reference cell; a read circuit identifying data stored in the first memory cell in response to a memory cell signal received from the first memory cell through the second bitline and a reference signal received from the first reference cell through the fourth bitline; and a bitline level controller controlling a voltage level of the third bitline.
摘要:
In a semiconductor memory incorporating therein a circuit for relieving a defective memory cell, a memory cell array constituted of a number of main memory cells MC00 to MCij is added with one column of redundant memory cells MC0j+1 to MCij+1 and one word line of substitution information storing memory cells MCRA0 to MCRAj+1. In only a first cycle after the power supply is turned on, the substitution information DR0 to DRj is read out from the substitution information storing memory cells by use of a writing/reading circuit associated with the main memory cells, and is transferred to and held in a control circuit. In a second and succeeding cycles, the control circuit generates Y selection circuit control signals CS0 to CSj on the basis of the substitution information held in the control circuit, and a Y selection circuit is controlled by the control signals CS0 to CSj so as to selectively connect the columns other than a defective column to an input/output line. Thus, a chip area overhead attributable to the installation of the defective memory cell relief circuit is minimized. In addition, an address comparing circuit for a defective memory cell substitution is no longer necessary, and an access time overhead attributable to the address substitution operation does not occur.
摘要:
The object of the present invention is to provide resin compositions conferring cured materials (a coating or the like) with excellent appearance, excellent mechanical properties, or the like. The present invention provides resin compositions containing a vinyl copolymer with an epoxy group and a branched glutaric acid.
摘要:
A dispersant comprises a polystyrenesulfonic acid having a weight-average molecular weight in the range of 2,000 to 100,000 or a salt thereof, wherein at least 70% of the terminals of the polymer chain have an indane ring of the formula (I): wherein X represents a cation selected from the group consisting of a hydrogen, alkali metals, alkaline earth metals, ammonium and organic amines, and n and m each represent 0 or an integer of at least 1. The dispersant has excellent properties of dispersing organic and inorganic substances and an effect of remarkably improving the stability of a dispersion system such as a coal/water slurry.