公开(公告)号：US20180130898A1

公开(公告)日：2018-05-10

申请号：US15604822

申请日：2017-05-25

Applicant: Ideal Power, Inc.

Inventor： Richard A. Blanchard ,  William C. Alexander

IPC: H01L29/747 ,  H01L29/74 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/747 ,  H01L29/0623 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/1004 ,  H01L29/16 ,  H01L29/404 ,  H01L29/407 ,  H01L29/408 ,  H01L29/66234 ,  H01L29/66295 ,  H01L29/66386 ,  H01L29/705 ,  H01L29/73 ,  H01L29/732 ,  H01L29/7424

Abstract: The present application teaches, among other innovations, power semiconductor devices in which breakdown initiation regions, on BOTH sides of a die, are located inside the emitter/collector regions, but laterally spaced away from insulated trenches which surround the emitter/collector regions. Preferably this is part of a symmetrically-bidirectional power device of the “B-TRAN” type. In one advantageous group of embodiments (but not all), the breakdown initiation regions are defined by dopant introduction through the bottom of trench portions which lie within the emitter/collector region. In one group of embodiments (but not all), these can advantageously be separated trench portions which are not continuous with the trench(es) surrounding the emitter/collector region(s).

公开(公告)号：US09679999B2

公开(公告)日：2017-06-13

申请号：US15090582

申请日：2016-04-04

Applicant: Ideal Power Inc.

Inventor： Richard A. Blanchard

IPC: H01L27/082 ,  H01L29/66 ,  H01L29/747 ,  H01L29/40 ,  H01L29/06 ,  H01L29/16

CPC classification number: H01L29/747 ,  H01L27/082 ,  H01L27/0823 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0813 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/16 ,  H01L29/407 ,  H01L29/66234 ,  H01L29/66295 ,  H01L29/66303 ,  H01L29/73 ,  H01L29/732

Abstract: A two-surface bidirectional power bipolar transistor is constructed with a two-surface cellular layout. Each emitter/collector region (e.g. doped n-type) is a local center of the repeated pattern, and is surrounded by a trench with an insulated field plate, which is tied to the potential of the emitter/collector region. The outer (other) side of this field plate trench is preferably surrounded by a base connection region (e.g. p-type), which provides an ohmic connection to the substrate. The substrate itself serves as the transistor's base.

公开(公告)号：US20160322350A1

公开(公告)日：2016-11-03

申请号：US15083230

申请日：2016-03-28

Applicant: Ideal Power Inc.

Inventor： Richard A. Blanchard

IPC: H01L27/06 ,  H01L29/735 ,  H01L23/535 ,  H01L29/40 ,  H01L29/08 ,  H01L29/06

CPC classification number: H01L29/0821 ,  H01L23/535 ,  H01L27/0694 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0649 ,  H01L29/0808 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/72 ,  H01L29/735

Abstract: Bidirectional symmetrically-bidirectional power bipolar devices are laid out so that each emitter/collector region, on either side of the die, is laterally surrounded entirely by trenches which preferably contain insulated field plates, and which prevent lateral propagation of carriers. Most preferably the emitter/collector regions are laid out as stripes, so no part of the emitter/collector region is unexpectedly far from a good low-resistance connection to the base contact.

Abstract translation: 布置双向对称双向功率双极器件，使得芯片两侧的每个发射极/集电极区域完全由包含绝缘场板的沟槽横向包围，并且防止载流子的横向传播。 最优选地，发射极/集电极区域被布置成条纹，因此发射极/集电极区域的任何部分都不能远离良好的到基极触点的低电阻连接。

公开(公告)号：US20160322256A1

公开(公告)日：2016-11-03

申请号：US15055514

申请日：2016-02-26

Applicant: Ideal Power Inc.

Inventor： Richard A. Blanchard ,  William C. Alexander

IPC: H01L21/78 ,  H01L21/304 ,  H01L21/683 ,  H01L21/306

CPC classification number: H01L21/78 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2223/54426 ,  H01L2223/54453

Abstract: Methods and systems for fabricating bidirectional devices on both surfaces of a semiconductor wafer. Separation of the second handle wafer is accomplished by patterning a seal layer to form a grid before the second handle wafer is separated.

Abstract translation: 用于在半导体晶片的两个表面上制造双向器件的方法和系统。 通过在第二处理晶片分离之前图案化密封层以形成栅格来实现第二处理晶片的分离。

公开(公告)号：US20160181409A1

公开(公告)日：2016-06-23

申请号：US14918440

申请日：2015-10-20

Applicant: Ideal Power Inc.

Inventor： William C. Alexander ,  Richard A. Blanchard

IPC: H01L29/747 ,  H01L29/40

CPC classification number: H01L29/747 ,  H01L29/0649 ,  H01L29/407 ,  H01L29/42304 ,  H01L29/73 ,  H01L29/732 ,  H01L29/7325

Abstract: Power semiconductor devices, methods, and systems, in which additional switches are added on both surfaces of a two-sided power device with bidirectional conduction. The additional switches are preferably vertical trench MOS transistors, and permit the emitter-base junction on either surface to be shunted easily.

Abstract translation: 功率半导体器件，方法和系统，其中在具有双向导通的双面功率器件的两个表面上添加附加开关。 附加的开关优选是垂直沟槽MOS晶体管，并且允许任一表面上的发射极 - 基极接头容易分流。

公开(公告)号：US09374085B2

公开(公告)日：2016-06-21

申请号：US14934062

申请日：2015-11-05

Applicant: Ideal Power Inc.

Inventor： William C. Alexander ,  Richard A. Blanchard

IPC: H03K17/66 ,  H02M3/158 ,  H01L29/739 ,  H01L29/08 ,  H01L29/16 ,  H01L29/737 ,  H02M1/088 ,  H02M7/797 ,  H03K3/012 ,  H03K17/687 ,  H01L29/06 ,  H01L29/10 ,  H01L29/73 ,  H02M11/00 ,  H01L29/732 ,  H03K17/60 ,  H01L29/417 ,  H01L29/423

CPC classification number: H02M3/158 ,  H01L27/0755 ,  H01L27/0823 ,  H01L27/0828 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/16 ,  H01L29/1604 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/73 ,  H01L29/732 ,  H01L29/7375 ,  H01L29/7393 ,  H01L29/7395 ,  H02M1/088 ,  H02M3/1582 ,  H02M7/797 ,  H02M11/00 ,  H03K3/012 ,  H03K17/60 ,  H03K17/66 ,  H03K17/687

Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

公开(公告)号：US20160056815A1

公开(公告)日：2016-02-25

申请号：US14934053

申请日：2015-11-05

Applicant: Ideal Power Inc.

Inventor： William C. Alexander ,  Richard A. Blanchard

IPC: H03K17/66 ,  H01L29/732 ,  H01L29/417 ,  H01L29/423 ,  H01L29/08 ,  H01L29/10

CPC classification number: H02M3/158 ,  H01L27/0755 ,  H01L27/0823 ,  H01L27/0828 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/16 ,  H01L29/1604 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/73 ,  H01L29/732 ,  H01L29/7375 ,  H01L29/7393 ,  H01L29/7395 ,  H02M1/088 ,  H02M3/1582 ,  H02M7/797 ,  H02M11/00 ,  H03K3/012 ,  H03K17/60 ,  H03K17/66 ,  H03K17/687

Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

公开(公告)号：US09203400B2

公开(公告)日：2015-12-01

申请号：US14744850

申请日：2015-06-19

Applicant: Ideal Power Inc.

Inventor： William C. Alexander ,  Richard A. Blanchard

IPC: H01L29/86 ,  H03K17/60 ,  H01L29/732 ,  H02M11/00 ,  H01L29/73 ,  H03K17/66 ,  H03K3/012

CPC classification number: H02M3/158 ,  H01L27/0755 ,  H01L27/0823 ,  H01L27/0828 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/16 ,  H01L29/1604 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/73 ,  H01L29/732 ,  H01L29/7375 ,  H01L29/7393 ,  H01L29/7395 ,  H02M1/088 ,  H02M3/1582 ,  H02M7/797 ,  H02M11/00 ,  H03K3/012 ,  H03K17/60 ,  H03K17/66 ,  H03K17/687

Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

Abstract translation: 用于使用双向双极晶体管（BTRAN）进行开关的功率分组开关电源转换器的方法，系统，电路和器件。 四端子三层BTRAN在任一方向提供基本上相同的操作，正向电压小于二极管压降。 BTRAN是在非平衡载流子浓度高的条件下工作的完全对称的双对称双基极双极相对装置，当用作功率分组开关功率转换器的双向开关时，它可以具有惊人的协同作用。 BTRAN被驱动到高载流子浓度的状态，使得导通电压下降很低。

公开(公告)号：US20150311777A1

公开(公告)日：2015-10-29

申请号：US14792262

申请日：2015-07-06

Applicant: IDEAL POWER INC.

Inventor： William C. Alexander ,  Richard A. Blanchard

IPC: H02M1/088

CPC classification number: H02M3/158 ,  H01L27/0755 ,  H01L27/0823 ,  H01L27/0828 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/16 ,  H01L29/1604 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/73 ,  H01L29/732 ,  H01L29/7375 ,  H01L29/7393 ,  H01L29/7395 ,  H02M1/088 ,  H02M3/1582 ,  H02M7/797 ,  H02M11/00 ,  H03K3/012 ,  H03K17/60 ,  H03K17/66 ,  H03K17/687

Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

Abstract translation: 用于使用双向双极晶体管（BTRAN）进行开关的功率分组开关电源转换器的方法，系统，电路和器件。 四端子三层BTRAN在任一方向提供基本上相同的操作，正向电压小于二极管压降。 BTRAN是在非平衡载流子浓度高的条件下工作的完全对称的双对称双基极双极相对装置，当用作功率分组开关功率转换器的双向开关时，它可以具有惊人的协同作用。 BTRAN被驱动到高载流子浓度的状态，使得导通电压下降很低。

公开(公告)号：US20150288358A1

公开(公告)日：2015-10-08

申请号：US14744850

申请日：2015-06-19

Applicant: Ideal Power Inc.

Inventor： William C. Alexander ,  Richard A. Blanchard

IPC: H03K17/60 ,  H01L29/732

CPC classification number: H02M3/158 ,  H01L27/0755 ,  H01L27/0823 ,  H01L27/0828 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/16 ,  H01L29/1604 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/73 ,  H01L29/732 ,  H01L29/7375 ,  H01L29/7393 ,  H01L29/7395 ,  H02M1/088 ,  H02M3/1582 ,  H02M7/797 ,  H02M11/00 ,  H03K3/012 ,  H03K17/60 ,  H03K17/66 ,  H03K17/687

Abstract: Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

Abstract translation: 用于使用双向双极晶体管（BTRAN）进行开关的功率分组开关电源转换器的方法，系统，电路和器件。 四端子三层BTRAN在任一方向提供基本上相同的操作，正向电压小于二极管压降。 BTRAN是在非平衡载流子浓度高的条件下工作的完全对称的双对称双基极双极相对装置，当用作功率分组开关功率转换器的双向开关时，它可以具有惊人的协同作用。 BTRAN被驱动到高载流子浓度的状态，使得导通电压下降很低。