公开(公告)号：US10429728B2

公开(公告)日：2019-10-01

申请号：US15824227

申请日：2017-11-28

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Toshihiko Orihara ,  Hirofumi Kozakai ,  Youichi Usui ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/22 ,  G03F1/60 ,  G03F1/50 ,  G03F7/20 ,  H01L21/033

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≥350 (%/nm), and has a maximum height (Rmax)≤1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

公开(公告)号：US10209614B2

公开(公告)日：2019-02-19

申请号：US15655932

申请日：2017-07-21

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Yoichi Usui

IPC: B32B7/02 ,  G03F1/24 ,  G03F1/38 ,  G03F7/20

Abstract: A conductive film coated substrate, including a conductive film formed thereon. In a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 μm×1 μm of a surface of the conductive film, the surface of the conductive film satisfies a relationship that (BA70-BA30)/(BD70-BD30) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less.

公开(公告)号：US10001699B2

公开(公告)日：2018-06-19

申请号：US15275719

申请日：2016-09-26

Applicant: HOYA CORPORATION

Inventor： Toshihiko Orihara ,  Kazuhiro Hamamoto ,  Hirofumi Kozakai ,  Youichi Usui ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/22 ,  C03C3/06 ,  G03F1/48 ,  G02B5/08 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/20 ,  C03C17/34 ,  C03C17/36 ,  C03C23/00 ,  G03F7/16 ,  H01L21/308

CPC classification number: G03F1/48 ,  B82Y10/00 ,  B82Y40/00 ,  C03C3/06 ,  C03C17/3435 ,  C03C17/3626 ,  C03C17/3636 ,  C03C17/3639 ,  C03C17/3649 ,  C03C17/3665 ,  C03C23/0075 ,  C03C2201/42 ,  C03C2218/33 ,  G02B5/08 ,  G02B5/0816 ,  G02B5/0891 ,  G03F1/22 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2004 ,  G03F7/70733 ,  H01L21/3081 ,  H01L21/3085

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.

公开(公告)号：US09746762B2

公开(公告)日：2017-08-29

申请号：US14896411

申请日：2014-09-22

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Yoichi Usui

IPC: G03F1/24 ,  G03F1/22 ,  G03F1/60 ,  B32B7/02 ,  G03F7/20 ,  G03F1/38

CPC classification number: G03F1/24 ,  B32B7/02 ,  B32B2307/416 ,  B32B2551/00 ,  G03F1/38 ,  G03F7/20

Abstract: Provided is a conductive film coated substrate, including a conductive film formed thereon. In a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 μm×1 μm of a surface of the conductive film, the surface of the conductive film satisfies a relationship that (BA70−BA30)/(BD70−BD30) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less.

公开(公告)号：US09720315B2

公开(公告)日：2017-08-01

申请号：US14787497

申请日：2014-08-29

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Tatsuo Asakawa ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/50 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F7/2004

Abstract: Provided is a reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein the root mean square roughness (Rms), obtained by measuring a 3 μm×3 μm region on the surface of the reflective mask blank on which the mask blank multilayer film is formed with an atomic force microscope, is not more than 0.5 nm and the power spectrum density at a spatial frequency of 1 μm−1 to 10 μm−1 is not more than 50 nm4.

公开(公告)号：US09581895B2

公开(公告)日：2017-02-28

申请号：US14655190

申请日：2013-12-27

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Toshihiko Orihara ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/50 ,  G03F1/60 ,  G03F1/80 ,  G03F7/20 ,  G03F1/24

CPC classification number: G03F1/60 ,  G03F1/24 ,  G03F1/80 ,  G03F1/84 ,  G03F7/20 ,  G03F7/2004

Abstract: An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1×10−2 μm−1 to 1 μm−1, obtained by measuring a 0.14 mm×0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640×480 pixels with a white-light interferometer, is not more than 4×106 nm4, and the power spectral density at a spatial frequency of not less than 1 μm−1, obtained by measuring a 1 μm×1 μm region on the main surface with an atomic force microscope, is not more than 10 nm4.

Abstract translation: 本发明的目的是提供一种掩模板基板等，即使使用使用光的高灵敏度缺陷检查装置，由于减少包括伪缺陷在内的检测缺陷的数量，能够可靠地检测临界缺陷 的各种波长。 本发明涉及一种用于光刻的掩模坯料基板，其中通过测量0.14mm×0.1mm的区域得到的空间频率为1×10 -2μm-1 -1μm-1的功率谱密度 用白光干涉仪在640×480像素上形成转印图案的掩模坯料基板的主表面不大于4×106nm 4，空间频率处的功率谱密度不为 通过用原子力显微镜测量主表面上的1μm×1μm的区域获得的小于1μm的不超过10nm 4。

公开(公告)号：US09323141B2

公开(公告)日：2016-04-26

申请号：US14952772

申请日：2015-11-25

Applicant: HOYA CORPORATION

Inventor： Tsutomu Shoki ,  Kazuhiro Hamamoto

IPC: G03F1/24 ,  G03F1/42 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/42 ,  G03F1/80

Abstract: Disclosed is a method for producing a substrate with a multilayer reflective film for EUV lithography including a multilayer reflective film disposed on a principal surface of a substrate, the method including a multilayer reflective film formation step of forming the multilayer reflective film on the principal surface of the substrate in such a manner that the multilayer reflective film has a slope region in which the film thickness is decreased in a direction from the inside to the outside of the substrate on a peripheral portion of the principal surface, and a fiducial mark formation step of forming fiducial marks in the slope region by removing at least a portion of the multilayer reflective film, the fiducial marks serving as references for a defective location indicated by defect information with respect to the surface of the substrate with the multilayer reflective film.

Abstract translation: 公开了一种用于制造具有用于EUV光刻的多层反射膜的基板的方法，其包括设置在基板的主表面上的多层反射膜，该方法包括：多层反射膜形成步骤，在多层反射膜的主表面上形成多层反射膜 基板，使得多层反射膜具有在主表面的周边部分上从基板的内侧向外侧的方向上的膜厚度减小的倾斜区域，以及基板的基准标记形成步骤 通过去除多层反射膜的至少一部分来形成斜坡区域中的基准标记，所述基准标记作为相对于具有所述多层反射膜的所述基板的表面的缺陷信息指示的缺陷位置的参考。

公开(公告)号：US09229316B2

公开(公告)日：2016-01-05

申请号：US14369414

申请日：2013-03-21

Applicant: HOYA CORPORATION

Inventor： Tsutomu Shoki ,  Kazuhiro Hamamoto

IPC: G03F1/24 ,  G03F1/42

CPC classification number: G03F1/24 ,  G03F1/42 ,  G03F1/80

Abstract: Disclosed is a method for producing a substrate with a multilayer reflective film for EUV lithography including a multilayer reflective film disposed on a principal surface of a substrate, the method including a multilayer reflective film formation step of forming the multilayer reflective film on the principal surface of the substrate in such a manner that the multilayer reflective film has a slope region in which the film thickness is decreased in a direction from the inside to the outside of the substrate on a peripheral portion of the principal surface, and a fiducial mark formation step of forming fiducial marks in the slope region by removing at least a portion of the multilayer reflective film, the fiducial marks serving as references for a defective location indicated by defect information with respect to the surface of the substrate with the multilayer reflective film.

公开(公告)号：US20150205196A1

公开(公告)日：2015-07-23

申请号：US14423494

申请日：2013-09-24

Applicant: HOYA CORPORATION

Inventor： Toshihiko Orihara ,  Kazuhiro Hamamoto ,  Hirofumi Kozakai ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/76 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  G03F1/52

CPC classification number: G03F1/76 ,  G03F1/24 ,  G03F1/52 ,  G03F1/68 ,  G03F7/20 ,  H01L21/0274

Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film that enables the number of detected pseudo defects, to be reduced even when using highly sensitive defect inspection apparatuses using light of various wavelengths, and in particular, is capable of achieving a level of smoothness required of substrates with a multilayer reflective film while reliably detecting critical defects as a result of reducing the number of detected pseudo defects, as well as a method of manufacturing the same.The present invention relates to a method of manufacturing a substrate with a multilayer reflective film having a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, on the main surface of a mask blank substrate on the side of which a transfer pattern is formed, comprising a step of: depositing the multilayer reflective film on the main surface by ion beam sputtering using targets composed of a high refractive index material and a low refractive index material; wherein, during the ion beam sputtering, sputtered particles of the high refractive index material and the low refractive index material are made to enter at prescribed incident angle relative to the normal of the main surface so that the power spectral density in a prescribed spatial frequency region is a prescribed value.

Abstract translation: 本发明的目的是提供一种具有多层反射膜的基板，即使在使用具有各种波长的光的高灵敏度缺陷检查装置的情况下，能够减少检测到的伪缺陷的数量，特别是能够实现 同时可靠地检测由于检测到的伪缺陷的数量而导致的关键缺陷的多层反射膜的基板的平滑度以及其制造方法。 本发明涉及一种具有多层反射膜的基板的制造方法，所述多层反射膜具有通过交替层叠高折射率层和低折射率层而获得的多层反射膜，所述多层反射膜在所述侧面上的掩模基板的主表面上 其中形成转印图案的步骤包括以下步骤：通过使用由高折射率材料和低折射率材料构成的靶使用离子束溅射将多层反射膜沉积在主表面上; 其中，在离子束溅射期间，使高折射率材料和低折射率材料的溅射颗粒相对于主表面的法线以规定的入射角进入，使得在规定的空间频率区域中的功率谱密度 是规定值。

公开(公告)号：US20140302429A1

公开(公告)日：2014-10-09

申请号：US14355477

申请日：2013-02-05

Applicant: HOYA CORPORATION

Inventor： Tsutomu Shoki ,  Kazuhiro Hamamoto

IPC: G03F1/24

CPC classification number: G03F1/24 ,  G03F1/44 ,  G03F1/84

Abstract: Provided is a multilayer reflective film formed substrate formed with a fiducial mark for accurately managing coordinates of defects. A multilayer reflective film formed substrate is formed with a multilayer reflective film, which is adapted to reflect EUV light, on a substrate and a fiducial mark which serves as a reference for a defect position in defect information is formed on the multilayer reflective film. The fiducial mark includes a main mark for determining a reference point for the defect position and auxiliary marks arranged around the main mark. The main mark has a point-symmetrical shape and has a portion with a width of 200 nm or more and 10 μm or less with respect to a scanning direction of an electron beam writing apparatus or defect inspection light.

Abstract translation: 提供了形成有用于准确地管理缺陷坐标的基准标记的多层反射膜形成基板。 在多层反射膜形成基板上形成多层反射膜，该多层反射膜适用于反射EUV光，并且在多层反射膜上形成用作缺陷信息中缺陷位置的基准的基准标记。 基准标记包括用于确定缺陷位置的参考点和布置在主标记周围的辅助标记的主标记。 主标记具有点对称形状，并且具有相对于电子束写入装置的扫描方向或缺陷检查光的宽度为200nm以上且10μm以下的部分。