公开(公告)号：US6146979A

公开(公告)日：2000-11-14

申请号：US26032

申请日：1998-02-19

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238

CPC分类号： H01L21/187 ,  B81C1/0038 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  B81C2201/0191 ,  B81C2201/0192 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893

摘要： A technique for forming films of material (14) from a donor substrate (10). The technique has a step of introducing gas-forming particles (12) through a surface of a donor substrate (10) to a selected depth underneath the surface. The gas-forming particles form a layer of microbubbles within the substrate. A global heat treatment of the substrate then creates a pressure effect to separate a thin film of material from the substrate. Additional gas-forming particles are introduced into the donor substrate and a second thin film of material is then separated from the donor substrate. In a specific embodiment, the gas-forming particles are implanted using a plasma immersion ion implantation method.

摘要翻译： 一种从供体衬底（10）形成材料（14）的薄膜的技术。 该技术具有通过供体基板（10）的表面将气体形成颗粒（12）引导到表面下方的选定深度的步骤。 气体形成颗粒在衬底内形成微泡层。 基板的全面热处理然后产生将基材薄膜分离的压力效应。 另外的气体形成颗粒被引入到供体衬底中，然后将第二材料薄膜与供体衬底分离。 在具体实施方案中，使用等离子体浸没离子注入方法注入气体形成颗粒。

公开(公告)号：US6033974A

公开(公告)日：2000-03-07

申请号：US370975

申请日：1999-08-10

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： B81C1/00 ,  H01L21/22 ,  H01L21/30 ,  H01L21/38 ,  H01L21/46

CPC分类号： H01L21/26506 ,  B81C1/0038 ,  H01L21/76254 ,  B81C2201/0191 ,  B81C2201/0192

摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

摘要翻译： 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选定的方式在表面下方的选定深度（20）处形成应力区域的步骤。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此所述切割动作提供扩张切割前缘以释放供体 来自供体衬底的剩余部分的材料。

公开(公告)号：US20110294306A1

公开(公告)日：2011-12-01

申请号：US13207304

申请日：2011-08-10

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L21/263

CPC分类号： H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

摘要： A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN or SiC. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.

摘要翻译： 一种用于形成多材料薄膜的方法包括提供包括单晶硅的多材料供体衬底和包括GaN或SiC的上覆膜。 能量粒子通过多材料供体衬底的表面引入单晶硅内的选定深度。 该方法包括向施主衬底的选定区域提供能量，以在施主衬底中开始受控的切割作用。 然后，使用传播劈裂前端从施主衬底的剩余部分释放多材料膜，所述多材料膜包括单晶硅和上覆膜。

公开(公告)号：US08012852B2

公开(公告)日：2011-09-06

申请号：US12789361

申请日：2010-05-27

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L21/30

CPC分类号： H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

摘要翻译： 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US06890838B2

公开(公告)日：2005-05-10

申请号：US10402356

申请日：2003-03-26

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L21/20 ,  H01L21/223 ,  H01L21/265 ,  H01L21/322 ,  H01L21/762

CPC分类号： H01L21/3223 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/3226 ,  H01L21/76254

摘要： A technique for forming a gettering layer in a wafer made using a controlled cleaving process. The gettering layer can be made by implanting using beam line or plasma immersion ion implantaion, or made by forming a film of material such as polysilicon by way of chemical vapor deposition. A controlled cleaving process is used to form the wafer, which is a multilayered silicon on insulator substrate. The gettering layer removes and/or attracts impurities in the wafer, which can be detrimental to the functionality and reliability of an integrated circuit device made on the wafer.

摘要翻译： 一种在使用受控断裂工艺制成的晶片中形成吸气层的技术。 吸气层可以通过使用束线或等离子体浸没离子注入植入，或者通过通过化学气相沉积形成诸如多晶硅的材料的膜制成。 使用受控的裂解工艺来形成绝缘体上多层硅衬底的晶片。 吸杂层去除和/或吸引晶片中的杂质，这可能不利于在晶片上制成的集成电路器件的功能和可靠性。

公开(公告)号：US06335264B1

公开(公告)日：2002-01-01

申请号：US09663043

申请日：2000-09-15

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L21265

CPC分类号： H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

摘要： A technique for forming films of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define donor substrate material (12) above the selected depth. Energy is provided to a selected region of the substrate to cleave a thin film of material from the donor substrate. Particles are introduced again into the donor substrate underneath a fresh surface of the donor substrate. A second thin film of material is then cleaved from the donor substrate.

摘要翻译： 一种从供体衬底（10）形成材料（12）的薄膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对高的浓度以限定上述施主衬底材料（12） 所选深度。 能量被提供到衬底的选定区域以从施主衬底切割材料薄膜。 将颗粒再次引入供体底物的供体底物的新鲜表面下方。 然后从供体基材上切下第二薄膜材料。

公开(公告)号：US06291314B1

公开(公告)日：2001-09-18

申请号：US09335860

申请日：1999-06-17

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L2130

CPC分类号： H01L21/67092 ,  H01L21/76254

摘要： A technique for forming a film of material having active devices from a donor substrate. The technique has a step of introducing energetic particles in a selected manner through a surface and active devices of a donor substrate a selected depth underneath the active devices, where the particles have a relatively high concentration to define a donor substrate material above the selected depth. The surface of the donor substrate is attached to a release layer on a transfer substrate. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate at the selected depth, whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate. The transfer substrate holds the cleaved material and is used to transfer the cleaved material with active devices onto a target substrate.

摘要翻译： 一种用于从施主衬底形成具有有源器件的材料的膜的技术。 该技术具有以选择的方式通过施主衬底的表面和有源器件在有源器件下方的选定深度引入高能粒子的步骤，其中，所述粒子具有相对较高的浓度以限定所选深度以上的施主衬底材料。 供体衬底的表面附着在转印衬底上的剥离层上。 能量源被引导到供体基底的选定区域以引发基底在所选择的深度处的受控裂解作用，于是该切割作用提供了扩张切割前沿，以使供体材料从供体基底的剩余部分释放。 转移衬底保持切割的材料并用于将切割的材料与活性器件转移到目标衬底上。

公开(公告)号：US06284631B1

公开(公告)日：2001-09-04

申请号：US09480979

申请日：2000-01-10

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L2122

CPC分类号： H01L21/26506 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2658 ,  H01L21/76254

摘要： A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

摘要翻译： 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选定的方式在表面下方的选定深度（20）处形成受应力区域的步骤。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控断裂作用，因此，所述切割作用提供了扩张切割前沿以释放施主材料 从供体底物的剩余部分。

公开(公告)号：US06184111B2

公开(公告)日：2001-02-06

申请号：US09371589

申请日：1999-08-10

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L21425

CPC分类号： H01L21/76254

摘要： A process for forming a novel substrate material. The process includes providing a substrate, e.g., silicon wafer. The substrate has a stressed layer at a selected depth underneath a surface of the substrate. The stressed layer is at the selected depth to define a substrate material to be removed above the selected depth. The stressed layer comprises a deposited layer and an implanted region. The substrate also comprises a device layer overlying the stressed layer. The process includes forming a plurality of integrated circuit devices on the substrate material. A thermal treatment process at a temperature greater than about 400 degrees Celsius is included in the process of forming the integrated circuit devices. Next, the process includes providing energy to a selected region of the substrate to initiate a controlled cleaving action at the selected depth in the substrate, whereupon the cleaving action is made using a propagating cleave front to free a portion of the material to be removed from the substrate.

摘要翻译： 一种形成新型基材的方法。 该方法包括提供衬底，例如硅晶片。 衬底在衬底的表面下方的选定深度处具有应力层。 应力层处于所选择的深度以限定要在所选择的深度上方移除的基底材料。 应力层包括沉积层和植入区域。 衬底还包括覆盖应力层的器件层。 该方法包括在衬底材料上形成多个集成电路器件。 在形成集成电路器件的过程中包括在大于约400摄氏度的温度下的热处理工艺。 接下来，该方法包括向衬底的选定区域提供能量，以在衬底中的所选择的深度处开始受控的切割作用，由此使用传播劈裂前缘将一部分待移除的材料 底物。

公开(公告)号：US6083324A

公开(公告)日：2000-07-04

申请号：US25964

申请日：1998-02-19

申请人： Francois J. Henley ,  Nathan W. Cheung

发明人： Francois J. Henley ,  Nathan W. Cheung

IPC分类号： H01L21/20 ,  H01L21/265 ,  H01L21/322 ,  H01L21/762

CPC分类号： H01L21/3226 ,  H01L21/2007 ,  H01L21/26506 ,  H01L21/26533 ,  H01L21/3223 ,  H01L21/76254

摘要： A gettering layer in a silicon-on-insulator wafer. The gettering layer may be formed by implanting gas-forming particles or precipitate-forming particles beneath the active region of the silicon layer and thermally treating the gas-forming ions to produce microbubbles or precipitates within the silicon layer. The microbubbles an/or precipitates create trapping sites for mobile impurity species, thus gettering the impurities. In another embodiment, a polysilicon layer is formed on a donor silicon wafer prior to separating a thin layer of silicon from the donor wafer. The thin layer of silicon is bonded to a backing wafer, the polysilicon layer provides a gettering layer between the active silicon and the backing wafer.

摘要翻译： 绝缘体硅晶片中的吸气层。 吸气层可以通过在硅层的有源区下方注入气体形成颗粒或沉淀形成颗粒并热处理气体形成离子以在硅层内产生微泡或沉淀而形成。 微泡a /或沉淀产生移动杂质物质的捕获位点，从而吸收杂质。 在另一个实施例中，在从供体晶片分离出薄的硅层之前，在施主硅晶片上形成多晶硅层。 硅的薄层结合到背衬晶片，多晶硅层在活性硅和背衬晶片之间提供吸气层。