公开(公告)号：US20210313369A1

公开(公告)日：2021-10-07

申请号：US17222743

申请日：2021-04-05

Applicant: CANON KABUSHIKI KAISHA

Inventor： Tsutomu Tange ,  Toshiyuki Ogawa ,  Hideaki Ishino ,  Yusuke Onuki

IPC: H01L27/146

Abstract: A technique advantageous for improving an optical property of a photoelectric conversion apparatus is provided. The photoelectric conversion apparatus includes a photoelectric conversion layer and a light-shielding film that covers the photoelectric conversion layer, wherein the light-shielding film includes one metallic layer and another metallic layer located between the one metallic layer and the photoelectric conversion layer.

公开(公告)号：US20200251518A1

公开(公告)日：2020-08-06

申请号：US16749221

申请日：2020-01-22

Applicant: CANON KABUSHIKI KAISHA

Inventor： Takumi Ogino ,  Hiroaki Kobayashi ,  Tsutomu Tange ,  Akihiro Shimizu

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/522

Abstract: A semiconductor apparatus comprising: a first semiconductor component including a first semiconductor layer and a first insulation film; and a second semiconductor component including a second semiconductor layer and a second insulation film, wherein the first semiconductor component and the second semiconductor component are bonded to each other by each of a plurality of first electric conductor portions provided in the first insulation film and each of a plurality of second electric conductor portions provided in the second insulation film, each of the plurality of first electric conductor portions is constituted by one pad surrounded by the first insulation film and N vias bonded to the one pad so as to be positioned between the one pad and the first semiconductor layer, and a volume VTR of the one pad and a total volume VTH of the N vias satisfy VTR/VTH≥N.

公开(公告)号：US20200083263A1

公开(公告)日：2020-03-12

申请号：US16556964

申请日：2019-08-30

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yoshiei Tanaka ,  Katsunori Hirota ,  Yusuke Onuki ,  Tsutomu Tange ,  Takumi Ogino

IPC: H01L27/146

Abstract: A silicon compound film that is any one of a silicon oxide film, a silicon nitride film, and a silicon carbide film, and a metal compound film lying between the silicon compound film and a semiconductor layer are arranged above a main face. The silicon compound film and the metal compound film extend into a first trench, and the metal compound film extends into a second trench. When a distance from the bottom of the second trench to the silicon compound film is expressed as “Hb”, and a distance from the main face to the silicon compound film is expressed as “Hd”, the respective distances satisfy the condition “Hd

公开(公告)号：US20190280023A1

公开(公告)日：2019-09-12

申请号：US16275652

申请日：2019-02-14

Applicant: CANON KABUSHIKI KAISHA

Inventor： Takahiro Suzuki ,  Yoshiei Tanaka ,  Tsutomu Tange ,  Katsunori Hirota

IPC: H01L27/146

Abstract: An imaging device includes a substrate including a photoelectric conversion portion and an insulating layer formed to cover at least a part of the photoelectric conversion portion. The insulating layer contains silicon, nitrogen, and chlorine. In an embodiment, in at least a part of the insulating layer, a ratio of silicon atoms bonded to one, two, or three nitrogen atoms and not bonded to an oxygen atom is not more than 20% in silicon atoms contained in at least the part.

公开(公告)号：US10411058B2

公开(公告)日：2019-09-10

申请号：US15849229

申请日：2017-12-20

Applicant: CANON KABUSHIKI KAISHA

Inventor： Tsutomu Tange ,  Yukinobu Suzuki ,  Aiko Kato ,  Koji Hara ,  Takehito Okabe

IPC: H01L27/146 ,  H01L21/768 ,  H01L29/78 ,  H01L29/08

Abstract: A semiconductor apparatus includes a silicon layer including first and second semiconductor regions; an insulator film, on the silicon layer, having first and second holes positioned on the first and second semiconductor regions; a first metal portion containing a first metal element in the first hole; a first conductor portion containing a second metal element between the first metal portion and the first semiconductor region; a first silicide region containing the second metal element between the first conductor portion and the first semiconductor region; a second metal portion containing the first metal element in the second hole; a second conductor portion containing the second metal element between the second metal portion and the second semiconductor region; and a second silicide region containing a third metal element between the second conductor portion and the second semiconductor region, wherein the first conductor portion thickness is greater than the second conductor portion thickness.

公开(公告)号：US20190096946A1

公开(公告)日：2019-03-28

申请号：US16137861

申请日：2018-09-21

Applicant: CANON KABUSHIKI KAISHA

Inventor： Katsunori Hirota ,  Keiichi Sasaki ,  Tsutomu Tange ,  Yoshiei Tanaka ,  Akira Ohtani

IPC: H01L27/146 ,  H01L31/103 ,  H01L29/66 ,  H01L29/51 ,  H01L29/778 ,  H01L29/20 ,  H01L29/423

Abstract: An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33.

公开(公告)号：US10096545B2

公开(公告)日：2018-10-09

申请号：US15279135

申请日：2016-09-28

Applicant: CANON KABUSHIKI KAISHA

Inventor： Akihiro Kawano ,  Tsutomu Tange ,  Masao Ishioka ,  Koichi Tazoe

IPC: H01L27/146 ,  H01L23/522 ,  H01L27/092 ,  H01L29/78 ,  H01L21/8238

Abstract: There is provided an image capturing apparatus including a pixel circuit that generates a pixel signal based on an electric charge generated by photoelectric conversion and a logic circuit that outputs a signal based on the pixel signal. The image capturing apparatus includes a first contact plug connected to a source or a drain of a first transistor constituting the pixel circuit and a second contact plug connected to a source or a drain of a second transistor constituting the logic circuit. A diameter of the first contact plug is smaller than a diameter of the second contact plug.

公开(公告)号：US20170092582A1

公开(公告)日：2017-03-30

申请号：US15279135

申请日：2016-09-28

Applicant: CANON KABUSHIKI KAISHA

Inventor： Akihiro Kawano ,  Tsutomu Tange ,  Masao Ishioka ,  Koichi Tazoe

IPC: H01L23/522 ,  H01L27/146 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L23/5226 ,  H01L21/823814 ,  H01L21/823878 ,  H01L27/092 ,  H01L27/14636 ,  H01L27/14645 ,  H01L29/7833

Abstract: There is provided an image capturing apparatus including a pixel circuit that generates a pixel signal based on an electric charge generated by photoelectric conversion and a logic circuit that outputs a signal based on the pixel signal. The image capturing apparatus includes a first contact plug connected to a source or a drain of a first transistor constituting the pixel circuit and a second contact plug connected to a source or a drain of a second transistor constituting the logic circuit. A diameter of the first contact plug is smaller than a diameter of the second contact plug.