公开(公告)号：US11532656B2

公开(公告)日：2022-12-20

申请号：US16834735

申请日：2020-03-30

Applicant: CANON KABUSHIKI KAISHA

Inventor： Hiroshi Sekine ,  Yusuke Onuki ,  Kazunari Kawabata

IPC: H01L27/14 ,  H01L27/146 ,  H04N5/378 ,  G01C3/08 ,  H04N5/3745 ,  H04N5/355

Abstract: In an imaging device, a photoelectric converter of a first pixel and a photoelectric converter of a second pixel are arranged along a first direction. At least part of a charge accumulation portion of the first pixel is disposed between the photoelectric converter of the first pixel and the photoelectric converter of the second pixel. An exit surface of a light guiding path of the first pixel is longer in a second direction orthogonal to the first direction in plan view than in the first direction.

公开(公告)号：US20220247963A1

公开(公告)日：2022-08-04

申请号：US17588469

申请日：2022-01-31

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yusuke Onuki

IPC: H04N5/3745

Abstract: A photoelectric conversion device includes a photoelectric converter, a first node configured to be supplied with charges from the photoelectric converter, an amplification transistor configured to output a signal corresponding to a voltage of the first node, a first transistor configured to open/close a path between the first node and a second node not included in a path from the photoelectric converter to the first node, and a second transistor configured to open/close a path between the second node and a third node. A second capacitance which is added to the second node when the second transistor is set in a conductive state is larger than a first capacitance which is added to the first node when the first transistor is set in a conductive state.

公开(公告)号：US20220139985A1

公开(公告)日：2022-05-05

申请号：US17511382

申请日：2021-10-26

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yusuke Onuki ,  Junji Iwata ,  Yasushi Matsuno ,  Hajime Ikeda

IPC: H01L27/146

Abstract: A photoelectric conversion apparatus includes a first substrate having a first semiconductor device layer including a plurality of photoelectric conversion units and a well, and a second substrate having a second semiconductor device layer including a circuit configured to process signals obtained by the plurality of photoelectric conversion units, wherein the first and second substrates are laminated together, wherein the first semiconductor device layer includes an effective pixel region, an optical black pixel region, and an outer periphery region, wherein, in a planar view, a light-blocking region formed by a light-blocking layer overlaps the optical black pixel region, and the light-blocking region does not overlap the outer periphery region, wherein the outer periphery region has a charge draining region including a semiconductor region of the same conductivity type as a signal charge, and wherein a fixed potential is supplied to the charge draining region.

公开(公告)号：US20220020808A1

公开(公告)日：2022-01-20

申请号：US17375134

申请日：2021-07-14

Applicant: Canon Kabushiki Kaisha

Inventor： Koji Hara ,  Yusuke Onuki ,  Tsuyoshi Miyagawa ,  Shinichi Saeki ,  Shinsuke Kojima

IPC: H01L27/146 ,  H04N5/374 ,  H01L23/522 ,  H01L23/528

Abstract: A semiconductor apparatus including: a first substrate; a first wiring structure; a second substrate; and a second wiring structure, wherein the first wiring structure has a first wiring layer bonded to wiring of the second wiring structure, a second wiring layer connected to the first wiring layer by a first via, and a third wiring layer connected to the second wiring layer by a second via, at least part of the second via is located at a range distanced, by at least a width of the first via, from an axis of the first via, a thickness of the second wiring layer is less than the width of the first via, a major constituent of the first wiring layer, the second wiring layer and the first via is copper, and a layer that is made from a material different from copper is disposed between the first and second wiring layers.

公开(公告)号：US11139334B2

公开(公告)日：2021-10-05

申请号：US16915181

申请日：2020-06-29

Applicant: CANON KABUSHIKI KAISHA

Inventor： Masahiro Kobayashi ,  Yusuke Onuki ,  Tom Koizumi

IPC: H01L21/00 ,  H01L27/146 ,  H04N5/359 ,  H04N5/3745

Abstract: A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.

公开(公告)号：US10535688B2

公开(公告)日：2020-01-14

申请号：US16259451

申请日：2019-01-28

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yusuke Onuki ,  Mahito Shinohara ,  Hajime Ikeda ,  Takafumi Miki ,  Hiroshi Sekine

IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/378 ,  H04N5/369 ,  H04N5/359

Abstract: An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount QPD generated by the photoelectric converter during one exposure period, a saturation charge amount QMEM_SAT of the first holding portion, and the maximum charge amount QGS that can be held in the potential well are in a relationship of: QPD

公开(公告)号：US10373993B2

公开(公告)日：2019-08-06

申请号：US15861350

申请日：2018-01-03

Applicant: CANON KABUSHIKI KAISHA

Inventor： Masahiro Kobayashi ,  Yuichiro Yamashita ,  Yusuke Onuki

IPC: H04N5/374 ,  H01L27/146

Abstract: A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate.

公开(公告)号：US10304894B2

公开(公告)日：2019-05-28

申请号：US15608746

申请日：2017-05-30

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yusuke Onuki ,  Masahiro Kobayashi ,  Kazunari Kawabata ,  Hiroshi Sekine

IPC: H04N5/335 ,  H01L27/146 ,  H04N5/355 ,  H04N5/369

Abstract: Respective first signal holding units of a plurality of sets are commonly connected to an input node of an amplification unit of one set via a second transfer unit of a set to which the first signal holding unit corresponds, and respective second signal holding units of the plurality of sets are commonly connected to the input node of the amplification unit of one set via a fourth transfer unit of a set to which the second signal holding unit corresponds.

公开(公告)号：US10177190B2

公开(公告)日：2019-01-08

申请号：US15656979

申请日：2017-07-21

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yusuke Onuki ,  Yuichiro Yamashita ,  Masahiro Kobayashi

IPC: H01L27/146

Abstract: A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.

公开(公告)号：US10091449B2

公开(公告)日：2018-10-02

申请号：US15254853

申请日：2016-09-01

Applicant: CANON KABUSHIKI KAISHA

Inventor： Masahiro Kobayashi ,  Takeshi Ichikawa ,  Yusuke Onuki ,  Masaaki Minowa ,  Kazunari Kawabata ,  Hiroshi Sekine

IPC: H04N5/335 ,  H04N5/378 ,  H04N5/376 ,  H04N5/232

Abstract: The imaging device performs a global electronic shutter operation in which exposure periods of a plurality of pixels coincide with each other. In a first period during which a photoelectric conversion portion of at least one of the pixels accumulates an electric charge, signals based on electric charges held in holding portions of the plurality of pixels are sequentially output to an output line. During a second period after the output of the signals from the plurality of pixels is finished, the holding unit of each of the plurality of pixels holds an electric charge.