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公开(公告)号：US10916574B2
公开(公告)日：2021-02-09
申请号：US16275652
申请日：2019-02-14
IPC分类号： H01L27/146
摘要： An imaging device includes a substrate including a photoelectric conversion portion and an insulating layer formed to cover at least a part of the photoelectric conversion portion. The insulating layer contains silicon, nitrogen, and chlorine. In an embodiment, in at least a part of the insulating layer, a ratio of silicon atoms bonded to one, two, or three nitrogen atoms and not bonded to an oxygen atom is not more than 20% in silicon atoms contained in at least the part.
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公开(公告)号：US10991741B2
公开(公告)日：2021-04-27
申请号：US16556964
申请日：2019-08-30
发明人： Yoshiei Tanaka , Katsunori Hirota , Yusuke Onuki , Tsutomu Tange , Takumi Ogino
IPC分类号： H01L27/146
摘要： A silicon compound film that is any one of a silicon oxide film, a silicon nitride film, and a silicon carbide film, and a metal compound film lying between the silicon compound film and a semiconductor layer are arranged above a main face. The silicon compound film and the metal compound film extend into a first trench, and the metal compound film extends into a second trench. When a distance from the bottom of the second trench to the silicon compound film is expressed as “Hb”, and a distance from the main face to the silicon compound film is expressed as “Hd”, the respective distances satisfy the condition “Hd
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公开(公告)号：US10777596B2
公开(公告)日：2020-09-15
申请号：US16137861
申请日：2018-09-21
IPC分类号： H01L27/146 , H01L31/103 , H01L29/423 , H01L29/51 , H01L29/778 , H01L29/20 , H01L29/66 , H01L29/78
摘要： An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33.
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公开(公告)号：US20220231175A1
公开(公告)日：2022-07-21
申请号：US17575504
申请日：2022-01-13
发明人： Yoshiei Tanaka , Takumi Ogino , Tsutomu Tange
摘要： A photoelectric conversion apparatus comprises a semiconductor layer including a plurality of photoelectric conversion portions and having a first surface and a second surface that is the surface opposite to the first surface, a wiring structure disposed on the second surface side of the semiconductor layer, and a metal compound film disposed on the first surface side of the semiconductor layer. The metal compound film contains hydrogen and carbon. The concentration of the hydrogen in the interface on the semiconductor layer side of the metal compound film is 1×1021 atoms/cm3 or more and 1×1022 atoms/cm3 or less. The concentration of the carbon in the interface on the semiconductor layer side of the metal compound film is 5×1020 atoms/cm3 or more and 1×1022 atoms/cm3 or less.
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公开(公告)号：US20200083263A1
公开(公告)日：2020-03-12
申请号：US16556964
申请日：2019-08-30
发明人： Yoshiei Tanaka , Katsunori Hirota , Yusuke Onuki , Tsutomu Tange , Takumi Ogino
IPC分类号： H01L27/146
摘要： A silicon compound film that is any one of a silicon oxide film, a silicon nitride film, and a silicon carbide film, and a metal compound film lying between the silicon compound film and a semiconductor layer are arranged above a main face. The silicon compound film and the metal compound film extend into a first trench, and the metal compound film extends into a second trench. When a distance from the bottom of the second trench to the silicon compound film is expressed as “Hb”, and a distance from the main face to the silicon compound film is expressed as “Hd”, the respective distances satisfy the condition “Hd
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公开(公告)号：US20190280023A1
公开(公告)日：2019-09-12
申请号：US16275652
申请日：2019-02-14
IPC分类号： H01L27/146
摘要： An imaging device includes a substrate including a photoelectric conversion portion and an insulating layer formed to cover at least a part of the photoelectric conversion portion. The insulating layer contains silicon, nitrogen, and chlorine. In an embodiment, in at least a part of the insulating layer, a ratio of silicon atoms bonded to one, two, or three nitrogen atoms and not bonded to an oxygen atom is not more than 20% in silicon atoms contained in at least the part.
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公开(公告)号：US20190096946A1
公开(公告)日：2019-03-28
申请号：US16137861
申请日：2018-09-21
IPC分类号： H01L27/146 , H01L31/103 , H01L29/66 , H01L29/51 , H01L29/778 , H01L29/20 , H01L29/423
摘要： An imaging apparatus includes a substrate including a photoelectric conversion portion; and a silicon nitride layer arranged to cover at least a portion of the photoelectric conversion portion. The silicon nitride layer contains chlorine. An N/Si composition ratio in the silicon nitride layer is not less than 1.00 and is less than 1.33.
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