公开(公告)号：US06538921B2

公开(公告)日：2003-03-25

申请号：US09929435

申请日：2001-08-14

Applicant: James M. Daughton ,  Arthur V. Pohm

Inventor： James M. Daughton ,  Arthur V. Pohm

IPC: G11C1114

CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16

Abstract: A ferromagnetic thin-film based digital memory having a plurality of bit structures interconnected with manipulation circuitry having a plurality of transistors so that each bit structure has transistors electrically coupled thereto that selectively substantially prevents current in at least one direction along a current path through that bit structure and permits selecting a direction of current flow through the bit structure if current is permitted to be established therein. A bit structure has a nonmagnetic intermediate layer with two major surfaces on opposite sides thereof and a memory film of an anisotropic ferromagnetic material on each of the intermediate layer major surfaces with an electrically insulative intermediate layer is provided on the memory film on which a magnetization reference layer is provided having a fixed magnetization direction.

公开(公告)号：US06535416B1

公开(公告)日：2003-03-18

申请号：US09673827

申请日：2001-04-23

Applicant: James M. Daughton ,  Arthur V. Pohm

Inventor： James M. Daughton ,  Arthur V. Pohm

IPC: G11C1122

CPC classification number: G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/15 ,  G11C11/1675 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/302 ,  H01L27/222

Abstract: A ferromagnetic thin-film based digital memory (FIG. 1) having in a bit structure (17,17′) a coupled moment material film (13,14,14′,14″) in which magnetic moments of adjacent atoms, ions or molecules are coupled to one another to maintain some alignment thereof below a critical temperature above which such alignment is not maintained, and also having a plurality of word line structures (20) each located across from the coupled moment material film (13,14,14′,14″) in a corresponding one of the bit structures (17,17′). The bit structures (17,17′) are sufficiently thermally isolated to allow currents in the adjacent word lines (20) and/or the bit structure (17,17′) to heat the bit structure (17,17′) to approach the critical temperature which may be supplied coincidently and then reduced to cool the bit structure (17,17′) while supplying a magnetic field during the cooling.

Abstract translation: 一种基于铁磁薄膜的数字存储器（图1），其具有位结构（17,17'）耦合力矩材料膜（13,14,14'，14“），其中相邻原子，离子 或分子彼此耦合以将其一些对准保持在高于该临界温度以上的对准不被维持的临界温度下，并且还具有多个字线结构（20），每个字线结构（20）均位于耦合的力矩材料膜（13,14， 14'，14“）中的一个位结构（17,17'）。 位结构（17,17'）被充分热隔离，以允许相邻字线（20）和/或位结构（17,17'）中的电流加热位结构（17,17'）以接近 临界温度可以一致地提供，然后减小以在冷却期间提供磁场的同时冷却钻头结构（17,17'）。

公开(公告)号：US5969522A

公开(公告)日：1999-10-19

申请号：US907561

申请日：1997-08-08

Applicant: James M. Daughton ,  Arthur V. Pohm

Inventor： James M. Daughton ,  Arthur V. Pohm

IPC: G01R33/09 ,  G11B5/39 ,  H01L43/08

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3954 ,  G11B2005/3996

Abstract: A magnetic field sensing structure for sensing magnetic field changes provided therein having a pair of pole structures with a gap space between them that each include permeable material and end in substantially a common surface. A plurality of field sensing structures is positioned successively in the gap space to be supported between the pole structures with each having an end thereof substantially the common surface. These sensing structures are formed of a plurality of magnetoresistive, anisotropic, ferromagnetic thin-film layers at least two of which are separated from one another by a nonmagnetic, electrically conductive layer positioned between them. They are electrically connected to one another adjacent the common surface, and may be electrically connected to one of the pole structures.

公开(公告)号：US5892708A

公开(公告)日：1999-04-06

申请号：US27681

申请日：1998-02-23

Applicant: Arthur V. Pohm

Inventor： Arthur V. Pohm

IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L27/222 ,  G11C11/15 ,  G11C11/16

Abstract: A digital memory having a plurality of locations where selectively coincident currents can be selected to flow in a pair of wordline structures, or with a wordline structure paired with a composite line structure (and possibly a bit line structure), to continue an existing, or switch to an opposite, edge magnetization state in a composite line structure or, alternatively, continue or switch a magnetization state in a storage film cell used to magnetically bias such a composite line structure.

Abstract translation: 具有多个位置的数字存储器，其中选择性地重合电流可以被选择以在一对字线结构中流动，或者与具有与复合线结构（可能是位线结构）配对的字线结构一起流动以继续存在或 在复合线结构中切换到相反的边缘磁化状态，或者替代地，继续或切换用于磁偏置这种复合线结构的存储膜单元中的磁化状态。

公开(公告)号：US5420819A

公开(公告)日：1995-05-30

申请号：US950921

申请日：1992-09-24

Applicant: Arthur V. Pohm

Inventor： Arthur V. Pohm

IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L27/222 ,  G11C11/15 ,  G11C11/16

Abstract: A digital memory having a plurality of locations where selectively coincident currents can be selected to flow in a pair of wordline structures, or with a wordline structure paired with a composite line structure (and possibly a bit line structure), to continue an existing, or switch to an opposite, edge magnetization state in a composite line structure or, alternatively, continue or switch a magnetization state in a storage film cell used to magnetically bias such a composite line structure.

Abstract translation: 具有多个位置的数字存储器，其中选择性地重合电流可以被选择以在一对字线结构中流动，或者与具有与复合线结构（可能是位线结构）配对的字线结构一起流动以继续存在或 在复合线结构中切换到相反的边缘磁化状态，或者替代地，继续或切换用于磁偏置这种复合线结构的存储膜单元中的磁化状态。

公开(公告)号：US5060193A

公开(公告)日：1991-10-22

申请号：US505090

申请日：1990-04-04

Applicant: James M. Daughton ,  Allan T. Hurst, Jr. ,  Arthur V. Pohm

Inventor： James M. Daughton ,  Allan T. Hurst, Jr. ,  Arthur V. Pohm

IPC: G11C11/14 ,  G11C11/15

CPC classification number: G11C11/15

Abstract: A method for storing selected magnetic states in magnetic bit structures so as to assure establishment of the desired state therein. A first word line current, used for storing a magnetic state, is followed by providing a second word line current. The second line current assures establishment of the desired state in the magnetic bit structure by overcoming any pinning of a magnetic wall.

公开(公告)号：US5012444A

公开(公告)日：1991-04-30

申请号：US504777

申请日：1990-04-04

Applicant: Allan T. Hurst, Jr. ,  Arthur V. Pohm

Inventor： Allan T. Hurst, Jr. ,  Arthur V. Pohm

IPC: G11C11/14 ,  G11C11/15

CPC classification number: G11C11/15

Abstract: A method for sensing magnetic states of magnetic bit structures formed of separated double layer, magnetoresistive, ferromagnetic memory films through providing a word line current in a direction which results in a magnetic field due thereto, in the memory films of these bit structures, that is oriented in a direction opposite a common direction followed at least partially by orientations of edge magnetizations in these films that are parallel to the edges thereof, and sensing a change in electrical resistance of these bit structures as a result of that current.

公开(公告)号：USRE44878E1

公开(公告)日：2014-05-06

申请号：US13617738

申请日：2012-09-14

Applicant: James M. Daughton ,  Arthur V. Pohm ,  Mark C. Tondra

Inventor： James M. Daughton ,  Arthur V. Pohm ,  Mark C. Tondra

IPC: H01L21/02

CPC classification number: B82Y25/00 ,  G11C11/161 ,  H01F1/408 ,  H01F10/1936 ,  H01F10/3268 ,  H01F10/3272

Abstract: A ferromagnetic thin-film based digital memory cell with a memory film of an anisotropic ferromagnetic material and with a source layer positioned on one side thereof so that a majority of conduction electrons passing therefrom have a selected spin orientation to be capable of reorienting the magnetization of the film. A disruption layer is positioned on the other side of the memory film so that conduction electrons spins passing therefrom are substantially random in orientation. The magnitude of currents needed to operate the cell can be reduced using coincident thermal pulses to raise the cell temperature.

Abstract translation: 一种基于铁磁性薄膜的数字存储单元，其具有各向异性铁磁材料的记忆膜并且其一侧位于其一侧，使得其中通过的大部分传导电子具有选定的自旋取向以能够重新定向磁化 这个电影。 破坏层位于存储膜的另一侧，使得通过的导电电子在取向上基本上是随机的。 可以使用重合的热脉冲来降低操作电池所需的电流的大小，以提高电池温度。

公开(公告)号：US07148531B2

公开(公告)日：2006-12-12

申请号：US11116874

申请日：2005-04-28

Applicant: James M. Daughton ,  James G. Deak ,  Arthur V. Pohm

Inventor： James M. Daughton ,  James G. Deak ,  Arthur V. Pohm

IPC: H01L29/76

CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/16 ,  H01L27/224 ,  H01L43/10

Abstract: A ferromagnetic thin-film based digital memory having a substrate formed of a base supporting an electrically insulating material primary substrate layer in turn supporting a plurality of current control devices each having an interconnection arrangement with each of said plurality of current control devices being separated from one another by spacer material therebetween and being electrically interconnected with information storage and retrieval circuitry. A plurality of bit structures are each supported on and electrically connected to a said interconnection arrangement of a corresponding one of said plurality of current control devices and have magnetic material films in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained of which two are separated by at least one intermediate layer of a nonmagnetic material having two major surfaces on opposite sides thereof. A plurality of word line structures located across from a corresponding one of the bit structures on an opposite side of the intermediate layer of a corresponding one of said bit structures from its interconnection arrangement supporting that bit structure. Sufficient electrical current selectively drawn through each of these bit structures as interconnected can cause substantial heating of that bit structure to raise temperatures thereof to have at least one of the magnetic material films therein at least approach its corresponding associated critical temperature while being substantially above temperatures of at least an adjacent said bit structure because of sufficient thermal isolation.

Abstract translation: 一种基于铁磁薄膜的数字存储器，其具有由支撑电绝缘材料主基底层的基底形成的基底，其又支撑多个电流控制装置，每个电流控制装置具有与所述多个电流控制装置中的每一个的互连装置， 另一个通过其间的间隔物材料并且与信息存储和检索电路电互连。 多个位结构分别被支撑在所述多个电流控制装置中的对应的一个电流控制装置的所述互连装置上并与其电连接，并且具有磁性材料膜，其中特性磁性能基本上保持在相关的临界温度以下， 磁性不保持，其中两个被至少一个在其相对侧上具有两个主表面的非磁性材料的中间层隔开。 多个字线结构，位于相对应的所述位结构的中间层的相对侧上的对应的一个位线结构，以及支撑该位结构的互连布置。 通过互连的这些位结构中的每一个选择性地抽出足够的电流可引起该位结构的实质加热以升高其温度，使其中的至少一个磁性材料膜至少接近其对应的相关临界温度，同时基本上高于 至少相邻的所述位结构由于足够的热隔离。

公开(公告)号：US06744086B2

公开(公告)日：2004-06-01

申请号：US10147367

申请日：2002-05-15

Applicant: James M. Daughton ,  Arthur V. Pohm ,  Mark C. Tondra

Inventor： James M. Daughton ,  Arthur V. Pohm ,  Mark C. Tondra

IPC: H01L31119

CPC classification number: B82Y25/00 ,  G11C11/161 ,  H01F1/408 ,  H01F10/1936 ,  H01F10/3268 ,  H01F10/3272

Abstract: A ferromagnetic thin-film based digital memory cell with a memory film of an anisotropic ferromagnetic material and with a source layer positioned on one side thereof so that a majority of conduction electrons passing therefrom have a selected spin orientation to be capable of reorienting the magnetization of the film. A disruption layer is positioned on the other side of the memory film so that conduction electrons spins passing therefrom are substantially random in orientation. The magnitude of currents needed to operate the cell can be reduced using coincident thermal pulses to raise the cell temperature.

Abstract translation: 一种基于铁磁性薄膜的数字存储单元，其具有各向异性铁磁材料的记忆膜并且其一侧位于其一侧，使得其中通过的大部分传导电子具有选定的自旋取向以能够重新定向磁化 这个电影。 破坏层位于存储膜的另一侧，使得通过的导电电子在取向上基本上是随机的。 可以使用重合的热脉冲来降低操作电池所需的电流的大小，以提高电池温度。