公开(公告)号：US11075228B2

公开(公告)日：2021-07-27

申请号：US16599948

申请日：2019-10-11

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jingang Fang ,  Luke Ding

IPC: H01L27/12 ,  H01L29/786

Abstract: A display substrate, a method for manufacturing the display substrate, and a display device are provided in the present disclosure. The display substrate includes: a substrate; a first insulation layer on the substrate; a first signal line on a side of the first insulation layer distal to the substrate; a second insulation layer covering the first signal line; and a second signal line on a side of the second insulation layer distal to the substrate, the second signal line overlapping with the first signal line at an overlap region. A concave portion is formed in the first insulation layer. At least at the overlap region, the first signal line is in the concave portion.

公开(公告)号：US11037801B2

公开(公告)日：2021-06-15

申请号：US16657062

申请日：2019-10-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jingang Fang ,  Luke Ding ,  Jun Liu ,  Wei Li ,  Yang Zhang ,  Leilei Cheng ,  Dongfang Wang

IPC: H01L21/32 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/027 ,  H01L21/28 ,  H01L21/285

Abstract: A fabrication method of a patterned metal film layer, including: sequentially depositing a first metal layer and a photoresist on a substrate; forming a first patterned photoresist in the photoresist retaining area; etching the first metal layer, and removing a part of the first metal layer having a first thickness and located in an edge area of the photoresist retaining area and in the photoresist removing area, to form a second metal layer; processing the first patterned photoresist to form a second patterned photoresist; etching and removing a part, which is not in contact with the second patterned photoresist, of the second metal layer on the substrate to form a patterned metal film layer.

公开(公告)号：US20200075773A1

公开(公告)日：2020-03-05

申请号：US16403860

申请日：2019-05-06

Applicant: Hefei Xinsheng Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Yang Zhang ,  Luke Ding ,  Bin Zhou ,  Haitao Wang ,  Ning Liu ,  Jingang Fang ,  Yongchao Huang ,  Liangchen Yan

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: A thin film transistor, a method of manufacturing the same, an array substrate and a display panel are disclosed. The thin film transistor includes a light blocking layer, an electrode layer, and a combination layer, which are sequentially stacked. The electrode layer includes a gate electrode, a source electrode and a drain electrode which are separated from one another, and the gate electrode is located between the source electrode and the drain electrode. The light blocking layer includes a first portion of which an orthogonal projection is located between an orthogonal projection of the gate electrode and an orthogonal projection of the source electrode; and a second portion of which an orthogonal projection is located between the orthogonal projection of the gate and an orthogonal projection of the drain. The combination layer includes an active layer.

公开(公告)号：US20190043996A1

公开(公告)日：2019-02-07

申请号：US15991535

申请日：2018-05-29

Applicant: BOE Technology Group Co., Ltd. ,  Hefei Xinsheng Optoelectronics Technology Co., Ltd

Inventor： Jun Liu ,  Wei Li ,  Bin Zhou ,  Tongshang Su ,  Jingang Fang ,  Yang Zhang

IPC: H01L29/786 ,  H01L29/417 ,  H01L27/12 ,  G09G3/3225

Abstract: An array substrate, preparation method thereof, display panel and display device are provided. The array substrate includes a base substrate and a plurality of thin film transistors distributed on the base substrate in an array. Each thin film transistor includes: a light-shielding block formed on the base substrate and provided with a first groove of which an opening direction is away from the base substrate; a buffer layer formed on one side of the light-shielding block away from the base substrate, a region of the buffer layer corresponding to the first groove being disposed with a second groove of which an opening direction is away from the base substrate; and a channel layer formed in the second groove. The structure uses bulges on two sides of the first groove to shield the light rays in regions without the thin film transistor, thereby improving the stability of the thin film transistor.

公开(公告)号：US12185560B2

公开(公告)日：2024-12-31

申请号：US18446065

申请日：2023-08-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Huifeng Wang ,  Wang Zhang ,  Jingang Fang

IPC: H01L51/50 ,  H10K50/13 ,  H10K50/822 ,  H10K59/122 ,  H10K71/00 ,  H10K71/16 ,  H10K71/20 ,  H10K71/60 ,  H10K59/12

Abstract: An organic electroluminescent display panel, a method of manufacturing the same, and a display device that can alleviate or avoid the occurrence of pixel crosstalk problems due to lateral conduction of the charge generation layer are disclosed. An organic electroluminescent display panel is provided which comprises: a substrate; an anode layer and a pixel defining layer over the substrate, the pixel defining layer defining pixel units, wherein a recess is provided in the pixel defining layer between adjacent pixel units; a stack of organic electroluminescent units over the anode layer and the pixel defining layer, the stack comprising at least two organic electroluminescent units and a charge generation layer disposed between organic electroluminescent units which are adjacent to each other; a cathode layer over the stack. The corresponding charge generation layers of the adjacent pixel units are disconnected at the recesses. The cathode layer is continuous at the recess.

公开(公告)号：US12063808B2

公开(公告)日：2024-08-13

申请号：US17393661

申请日：2021-08-04

Applicant: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jun Liu ,  Jingang Fang ,  Yang Zhang ,  Tongshang Su ,  Wei He ,  Bin Zhou ,  Ning Liu

IPC: H10K50/844 ,  H10K59/124 ,  H10K59/131 ,  H10K59/17 ,  H10K71/00 ,  H10K59/12

CPC classification number: H10K50/844 ,  H10K59/124 ,  H10K59/131 ,  H10K59/17 ,  H10K71/00 ,  H10K59/1201

Abstract: A light-emitting substrate includes; a base, an isolation portion disposed on the base and located in an isolation region located outside a light-emitting region, and a second insulating pattern located in the light-emitting region. The isolation portion includes a first conductive pattern, a second conductive pattern and a first insulating pattern that are sequentially stacked on the base; an orthogonal projection of the first conductive pattern on the base is located within an orthogonal projection of the second conductive pattern on the base; and a side face of the first conductive pattern proximate to the light-emitting region and a corresponding side face of the second conductive pattern proximate to the light-emitting region have a first gap therebetween. A side face of the second insulating pattern proximate to the first insulating pattern and a side face of the first insulating pattern proximate to the second insulating pattern have a second gap therebetween.

公开(公告)号：US11537016B2

公开(公告)日：2022-12-27

申请号：US16964278

申请日：2019-12-13

Applicant: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE Technology Group Co., Ltd.

Inventor： Leilei Cheng ,  Jingang Fang ,  Luke Ding ,  Jun Liu ,  Wei Li ,  Bin Zhou

IPC: G02F1/1333 ,  G02F1/1362 ,  H01L21/768 ,  H01L23/532 ,  H01L27/12

Abstract: A method of manufacturing an array substrate is provided, which comprises: forming a first metal layer and an insulating layer in sequence on a base substrate, the insulating layer covering the first metal layer; forming an etch barrier layer on the insulating layer; etching the etching barrier layer and the insulating layer multiple times, wherein an effective blocking area of the etching barrier layer decreases successively in each etching to form a connection hole penetrating the insulating layer, the connection hole includes a plurality of via holes connected in sequence, and a slope angle of a hole wall of each via hole is smaller than a preset slope angle; and forming a second metal layer, the second metal layer being connected to the first metal layer through the connection hole.

公开(公告)号：US10177204B2

公开(公告)日：2019-01-08

申请号：US15235458

申请日：2016-08-12

Applicant: BOE Technology Group Co., Ltd.

Inventor： Wei Li ,  Youngsuk Song ,  Jingang Fang ,  Hongda Sun

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

Abstract: A method for manufacturing a display substrate, a display substrate and a display device are disclosed. The method includes: forming a thin-film transistor (TFT) array on a base substrate to form an array substrate; and forming a pixel define layer (PDL) on a non-pixel region of the array substrate by a patterning process. A photochromic material is uniformly distributed in the PDL; the PDL provided with the photochromic material can be converted from light-transmitting to light-shielding under action of light illumination; and the process that the PDL is converted from light-transmitting to light-shielding is irreversible.

公开(公告)号：US20180308984A1

公开(公告)日：2018-10-25

申请号：US15571553

申请日：2017-05-05

Applicant: BOE Technology Group Co., Ltd.

Inventor： Wei Liu ,  Jingang Fang

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L21/383 ,  H01L29/66 ,  H01L29/24 ,  G02F1/1368 ,  G02F1/167 ,  G02F1/1335

CPC classification number: H01L29/78618 ,  G02F1/133514 ,  G02F1/1368 ,  G02F1/167 ,  G02F2201/123 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/34 ,  H01L21/383 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device. The manufacturing method of the thin film transistor includes: providing a substrate; depositing an active layer film, a gate insulator layer film, and a gate metal layer film on the substrate in sequence, patterning the active layer film, the gate insulator layer film, and the gate metal layer film to form an active layer, a gate insulator layer and a gate metal layer respectively, and depositing an insulator layer film at a first temperature and patterning the insulator layer film to form an insulator layer; a portion of the active layer, which portion is not overlapped with the gate metal layer, is treated to become conductive to provide a conductor during deposition of the insulator layer film.

公开(公告)号：US09978995B2

公开(公告)日：2018-05-22

申请号：US15306886

申请日：2016-03-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jingang Fang ,  Wulin Shen ,  Hongda Sun ,  Chun I Lin

IPC: H01L51/52 ,  H01L51/56 ,  H01L51/00

CPC classification number: H01L51/5284 ,  H01L27/322 ,  H01L51/0004 ,  H01L51/5253 ,  H01L51/5259 ,  H01L51/56

Abstract: A display substrate having a black matrix with a curved surface, a method for manufacturing the same and a display device are provided. The display substrate includes a black matrix disposed between adjacent pixels, wherein a sidewall of the black matrix is a concave curved surface. During the formation of a color film, since the sidewall of the black matrix is formed as a concave curved surface, color film droplets in one sub-pixel may return into the sub-pixel along the curved surface while splashing to the sidewall of the black matrix, thereby the contamination to adjacent pixels caused by the droplets splashing may be avoided, and a yield of the substrate may be ensured.