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公开(公告)号：US10990130B2
公开(公告)日：2021-04-27
申请号：US15752451
申请日：2017-08-03
Inventor： Yuankui Ding , Guangcai Yuan , Ce Zhao
Abstract: A flexible display panel and a film-like structure are provided according to the present disclosure. The flexible display panel includes a flexible display structure and a film-like structure arranged on at least one side of the flexible display structure. The film-like structure includes: a first flexible layer, a second flexible layer, a filler sealed between the first flexible layer and the second flexible layer, and a heater configured to heat the filler. A hardness of the filler varies with a temperature of the filler.
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22.发明授权公开(公告)号：US10886410B2
公开(公告)日：2021-01-05
申请号：US16393023
申请日：2019-04-24
Inventor： Yingbin Hu , Ce Zhao , Yuankui Ding , Wei Li , Wei Song , Luke Ding , Jun Liu , Liangchen Yan
IPC: H01L29/786 , H01L27/32 , H01L29/66
Abstract: Provided is a thin film transistor, including: a conductive light shielding layer; a metal oxide layer arranged on the light shielding layer; a buffer layer, an active layer, a gate insulating layer, a gate electrode, and an interlayer insulating layer arranged in sequence on the metal oxide layer, the interlayer insulating layer and the buffer layer comprising a first via hole and a second via hole for exposing the active layer, and a third via hole for exposing the metal oxide layer, in which a portion of the metal oxide layer exposed through the third via hole is a conductive portion, and other portions are insulative; and a source electrode and a drain electrode arranged on the interlayer insulating layer, in which the source electrode is connected to the active layer through the first via hole, and the drain electrode is connected to the active layer through the second via hole and connected to the conductive portion through the third via hole.
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公开(公告)号：US10680053B1
公开(公告)日：2020-06-09
申请号：US16441422
申请日：2019-06-14
Inventor： Yingbin Hu , Liangchen Yan , Ce Zhao , Yuankui Ding , Yang Zhang , Yongchao Huang , Luke Ding , Jun Liu
Abstract: A fabrication method for fabricating a thin-film transistor includes: forming a light shielding layer on a substrate; forming a buffer layer covering the light shielding layer, and forming a semiconductor material layer stacked on a surface of the buffer layer away from the substrate; forming a through hole penetrating through the buffer layer and the semiconductor material layer; patterning the semiconductor material layer to form an active layer covering a partial region of the buffer layer; forming a gate insulator layer on a surface of the active layer away from the substrate and a gate stacked on a surface of the gate insulator layer away from the substrate; forming a source and a drain on the surface of the buffer layer away from the substrate; and forming a dielectric layer covering the gate, the source, the drain, and the buffer layer, and being recessed into the through hole to form a groove.
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24.发明申请公开(公告)号：US20200091199A1
公开(公告)日：2020-03-19
申请号：US16395660
申请日：2019-04-26
Inventor： Wei Song , Ce Zhao , Bin Zhou , Dongfang Wang , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
IPC: H01L27/12 , H01L29/786 , H01L29/66 , H01L29/40 , H01L21/3213
Abstract: A thin film transistor and a method of fabricating the same, an array substrate and a method of fabricating the same, and a display device are provided, the method of fabricating a thin film transistor includes: forming an active layer on a base substrate; forming a metal layer on the active layer; and processing the metal layer to form a source electrode, a drain electrode, and a metal oxide layer, the metal oxide layer covering the source electrode, the drain electrode, and the active layer, the source electrode and the drain electrode being spaced apart and insulated from each other by the metal oxide layer.
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公开(公告)号：US20200035767A1
公开(公告)日：2020-01-30
申请号：US16436201
申请日：2019-06-10
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Dongfang Wang , Bin Zhou , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
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Patent Agency Ranking
公开(公告)号：US10079352B2
公开(公告)日：2018-09-18
申请号：US15201790
申请日：2016-07-05
Inventor： Leilei Cheng , Yuankui Ding , Dongfang Wang , Ce Zhao
CPC classification number: H01L51/0097 , H01L27/3244 , H01L51/003 , H01L51/56 , H01L2227/323 , H01L2251/5338 , Y02E10/549 , Y02P70/521
Abstract: Embodiments of the present disclosure provide a manufacturing method for a flexible device and a flexible display device. The manufacturing method for a flexible device comprises: step S1, forming an organosiloxane layer on a supporting substrate; step S2, forming a flexible substrate on the organosiloxane layer; step S3, forming a display device on the flexible substrate; step S4, performing an oxidation treatment on a surface of the organosiloxane layer that contacts the supporting substrate such that a silicon dioxide layer is formed between the organosiloxane layer and the supporting substrate; and step S5, peeling off the supporting substrate from the silicon dioxide layer.
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公开(公告)号：US11315783B2
公开(公告)日：2022-04-26
申请号：US16487552
申请日：2019-02-20
Inventor： Yuankui Ding , Heekyu Kim , Liangchen Yan , Ce Zhao , Bin Zhou , Yingbin Hu , Wei Song , Dongfang Wang
Abstract: A method of fabricating a display substrate is provided. The method includes forming a conductive layer on a base substrate; and performing a chemical vapor deposition process to form an oxide layer on a side of an exposed surface of the conductive layer away from the base substrate, the exposed surface of the conductive layer including copper, the oxide layer formed to include an oxide of a target element M. The chemical vapor deposition process is performed using a mixture of a first reaction gas including oxygen and a second reaction gas including the target element M, at a reaction temperature in a range of 200 Celsius degrees to 280 Celsius degrees. A mole ratio of oxygen element to the target element M in the mixture of the first reaction gas and the second reaction gas is in a range of 40:1 to 60:1.
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公开(公告)号：US11309428B2
公开(公告)日：2022-04-19
申请号：US16706160
申请日：2019-12-06
Inventor： Wei Song , Ce Zhao , Yuankui Ding , Ming Wang , Jun Liu , Yingbin Hu , Wei Li , Liusong Ni
IPC: H01L29/78 , H01L29/786 , H01L27/12 , H01L27/32
Abstract: The present disclosure provides a transistor and a manufacturing method thereof, a display substrate and a display device. The transistor includes: a base structure; an active layer on the base structure; and a gate electrode, a source electrode and a drain electrode that are all located on a side of the active layer distal to the base structure. The active layer includes a first region corresponding to an orthographic projection of the gate electrode on the base structure and a second region outside the orthographic projection. A surface of the base structure in contact with the active layer in the first region is not in the same plane as a surface of the base structure in contact with the active layer in the second region. The active layer in the first region has substantially the same thickness as a thickness of the active layer in the second region.
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公开(公告)号：US20210335950A1
公开(公告)日：2021-10-28
申请号：US16476474
申请日：2018-09-21
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Dongfang Wang , Bin Zhou , Ce Zhao , Tongshang Su , Yuankui Ding , Ming Wang
IPC: H01L27/32 , G09G3/3233 , H01L51/56
Abstract: The present disclosure provides a pixel unit, a method of manufacturing the same, and an array substrate. The pixel unit includes: a driving transistor, a switching transistor, and a light emitting element on a substrate; wherein the driving transistor has an input electrode electrically connected to a first power supply terminal and an output electrode electrically connected to a first terminal of the light emitting element; the switching transistor has an input electrode electrically connected to a data line, a control electrode electrically connected to a scan line, and an output electrode electrically connected to a gate electrode of the driving transistor; wherein the switching transistor and the driving transistor have different threshold voltages.
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公开(公告)号：US20210335946A1
公开(公告)日：2021-10-28
申请号：US16620653
申请日：2019-03-22
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Heekyu Kim , Yuankui Ding , Leilei Cheng , Yingbin Hu , Wei Li , Yang Zhang
Abstract: The present disclosure relates to a pixel structure. The pixel structure may include a base substrate; a first insulating island on a side of the base substrate; a first electrode on a side of the first insulating island opposite front the base substrate; a second electrode on the base substrate and at a peripheral area of the first insulating island; an active layer electrically connected to the first electrode and the second electrode; a second insulating layer on a side of the active layer opposite from the base substrate; a gate electrode on a side of the second insulating layer opposite from the base substrate; and a third insulating layer on a side of the gate electrode opposite from the base substrate.
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