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公开(公告)号：US11450721B2
公开(公告)日：2022-09-20
申请号：US16476474
申请日：2018-09-21
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Dongfang Wang , Bin Zhou , Ce Zhao , Tongshang Su , Yuankui Ding , Ming Wang
IPC: H01L27/32 , G09G3/3233 , H01L51/56
Abstract: The present disclosure provides a pixel unit, a method of manufacturing the same, and an array substrate. The pixel unit includes: a driving transistor, a switching transistor, and a light emitting element on a substrate; wherein the driving transistor has an input electrode electrically connected to a first power supply terminal and an output electrode electrically connected to a first terminal of the light emitting element; the switching transistor has an input electrode electrically connected to a data line, a control electrode electrically connected to a scan line, and an output electrode electrically connected to a gate electrode of the driving transistor; wherein the switching transistor and the driving transistor have different threshold voltages.
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公开(公告)号：US11355647B2
公开(公告)日：2022-06-07
申请号：US16331008
申请日：2018-08-17
Inventor： Yingbin Hu , Ce Zhao , Dongfang Wang , Bin Zhou , Jun Liu , Yuankui Ding , Wei Li
IPC: H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/66 , G02F1/1368 , H01L27/32
Abstract: A thin film transistor includes an active layer, a source electrode and a drain electrode. The active layer includes a conductive region and the conductive region is between the source electrode and the drain electrode and is spaced apart from at least one of the source electrode and the drain electrode.
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3.发明授权公开(公告)号：US11011437B2
公开(公告)日：2021-05-18
申请号：US16452952
申请日：2019-06-26
Inventor： Yingbin Hu , Ce Zhao , Yuankui Ding , Wei Song , Jun Wang , Yang Zhang , Wei Li , Liangchen Yan
IPC: H01L21/66 , G03F7/20 , H01L21/44 , H01L21/467 , H01L29/66 , H01L29/786
Abstract: The present disclosure provides a method for determining a width-to-length ratio of a channel region of a thin film transistor (TFT). The method includes: S1, setting an initial width-to-length ratio of the channel region; S2, manufacturing a TFT by using a mask plate according to the initial width-to-length ratio; S3, testing the TFT manufactured according to the initial width-to-length ratio; S4, determining whether or not the test result satisfies a predetermined condition, performing S5 if the test result satisfies the predetermined condition, and performing S6 if the test result does not satisfy the predetermined condition; S5, determining the initial width-to-length ratio as the width-to-length ratio of the channel region of the TFT; S6, changing the value of the initial width-to-length ratio, adjusting a position of the mask plate according to the changed initial width-to-length ratio, and performing S2 to S4 again.
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4.发明申请公开(公告)号：US20200168744A1
公开(公告)日：2020-05-28
申请号：US16410823
申请日：2019-05-13
Inventor： Yingbin Hu , Ce Zhao , Yuankui Ding , Jun Wang , Jun Liu , Guangyao Li , Yongchao Huang , Wei Li , Liangchen Yan
IPC: H01L29/786 , H01L29/66
Abstract: A method for manufacturing a thin film transistor includes forming a light shielding layer and a buffer layer covering the light shielding layer on a substrate. The method includes forming an active layer including a peripheral region and a channel region. The method includes forming a gate insulating layer covering the channel region and forming a contact hole exposing the light shielding layer. The method includes forming a source region and a drain region disposed on both sides of the channel region. The method includes forming an electrode layer including a gate electrode, a source electrode and a drain electrode spaced apart one another. The method includes forming a dielectric layer covering the gate electrode, the source electrode, the drain electrode and the buffer layer.
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公开(公告)号：US11622490B2
公开(公告)日：2023-04-04
申请号：US17346539
申请日：2021-06-14
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Dongfang Wang , Bin Zhou , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
IPC: H10K59/122 , H10K50/81 , H10K71/00 , H10K77/10 , H10K59/12 , H10K102/00
Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
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Patent Agency Ranking
公开(公告)号：US11367792B2
公开(公告)日：2022-06-21
申请号：US16971085
申请日：2019-11-01
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Heekyu Kim , Yuankui Ding , Leilei Cheng , Yingbin Hu , Wei Li , Guangyao Li , Qinghe Wang
IPC: H01L21/00 , H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/24 , H01L21/02 , H01L29/66 , H01L27/32
Abstract: The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.
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公开(公告)号：US11329115B2
公开(公告)日：2022-05-10
申请号：US16620653
申请日：2019-03-22
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Heekyu Kim , Yuankui Ding , Leilei Cheng , Yingbin Hu , Wei Li , Yang Zhang
IPC: H01L27/32 , H01L51/00 , H01L51/56 , H01L29/417 , H01L29/786
Abstract: The present disclosure relates to a pixel structure. The pixel structure may include a base substrate; a first insulating island on a side of the base substrate; a first electrode on a side of the first insulating island opposite front the base substrate; a second electrode on the base substrate and at a peripheral area of the first insulating island; an active layer electrically connected to the first electrode and the second electrode; a second insulating layer on a side of the active layer opposite from the base substrate; a gate electrode on a side of the second insulating layer opposite from the base substrate; and a third insulating layer on a side of the gate electrode opposite from the base substrate.
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公开(公告)号：US20210265392A1
公开(公告)日：2021-08-26
申请号：US17054823
申请日：2020-04-16
Inventor： Wei Song , Ce Zhao , Yuankui Ding , Ming Wang , Yingbin Hu , Qinghe Wang , Wei Li , Liusong Ni
IPC: H01L27/12 , H01L29/24 , H01L29/786 , H01L21/02 , H01L29/66
Abstract: This disclosure discloses an array substrate, and a production method, a display panel, and a display apparatus thereof. Particularly, this disclosure proposes a method of producing an array substrate, having the following steps: providing a substrate having a drive transistor region and a switch transistor region thereon; forming an preset layer for active layer on a side of the substrate; patterning the preset layer for active layer to form a drive active layer and a switch active layer, wherein an orthographic projection of the drive active layer on the substrate is located in the drive transistor region, an orthographic projection of the switch active layer on the substrate is located in the switch transistor region, and a carrier concentration in the drive active layer is less than a carrier concentration in the switch active layer.
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公开(公告)号：US11081501B2
公开(公告)日：2021-08-03
申请号：US16395660
申请日：2019-04-26
Inventor： Wei Song , Ce Zhao , Bin Zhou , Dongfang Wang , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
IPC: H01L29/786 , H01L27/12 , H01L21/3213 , H01L29/40 , H01L29/66 , H01L21/02 , H01L21/473 , H01L21/44 , H01L29/417
Abstract: A thin film transistor and a method of fabricating the same, an array substrate and a method of fabricating the same, and a display device are provided, the method of fabricating a thin film transistor includes: forming an active layer on a base substrate; forming a metal layer on the active layer; and processing the metal layer to form a source electrode, a drain electrode, and a metal oxide layer, the metal oxide layer covering the source electrode, the drain electrode, and the active layer, the source electrode and the drain electrode being spaced apart and insulated from each other by the metal oxide layer.
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公开(公告)号：US20210135012A1
公开(公告)日：2021-05-06
申请号：US16971085
申请日：2019-11-01
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Heekyu Kim , Yuankui Ding , Leilei Cheng , Yingbin Hu , Wei Li , Guangyao Li , Qinghe Wang
IPC: H01L29/786 , H01L27/12 , H01L29/24 , H01L21/02 , H01L29/66
Abstract: The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.
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