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公开(公告)号：US10139939B2
公开(公告)日：2018-11-27
申请号：US14436020
申请日：2014-07-17
Inventor： Bozhu Zhou , Myoung Kee Baek , Xianxue Duan , Cheng Chen , Chengshao Yang , Binbin Cao
Abstract: An optical touch screen and a display device are disclosed. The optical touch screen (200) comprises an optical touch panel (210) and a first sensor (220) and a second sensor (230). The optical touch panel (210) comprises a first optical transmission channel (211) and a second optical transmission channel (212) which are intersected with each other. The first sensor (220) is disposed on at least one end of the first optical transmission channel (211) and configured to receive light emitted by the first optical transmission channel (211). The second sensor (230) is disposed on at least one end of the second optical transmission channel (212) and configured to receive light emitted by the second optical transmission channel (212). The optical touch screen and the display device can improve the positioning accuracy of the touch position.
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公开(公告)号：US10025409B2
公开(公告)日：2018-07-17
申请号：US15222341
申请日：2016-07-28
Inventor： Chengshao Yang , Binbin Cao , Yinhu Huang , Zhixiang Zou
IPC: G06F3/041
Abstract: This disclosure provides a transparent conductive thin film, a substrate, a touch screen and a manufacturing method thereof, and a display device. The transparent conductive thin film comprises a first metal oxide layer, a metal layer and a second metal oxide layer arranged in a stacking manner.
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公开(公告)号：US09647141B2
公开(公告)日：2017-05-09
申请号：US15098385
申请日：2016-04-14
Inventor： Botao Song , Tao Jiang , Junhao Han , Ling Han , Binbin Cao , Chengshao Yang
IPC: H01L29/10 , H01L29/786 , H01L27/12
CPC classification number: H01L29/78696 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/41733 , H01L29/78606 , H01L29/78633 , H01L29/7869
Abstract: Embodiments of the present disclosure provide a thin film transistor (TFT) and a method of manufacturing the same, which enables to decrease the vertical resistance from the source and the drain to the polarity inversion region, so that the current from the source and the drain to the polarity inversion region may be increased, thereby improving the performances of the TFT. An active layer of the TFT is provided with a first groove and a second groove which neither pass through the active layer. A source and a drain of the TFT are formed at least partially in the first groove and the second groove, respectively. The source and the drain contact the active layer through the first groove and the second groove, respectively.
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公开(公告)号：US20170052615A1
公开(公告)日：2017-02-23
申请号：US15143673
申请日：2016-05-02
Inventor： Binbin Cao
IPC: G06F3/044
CPC classification number: G06F3/044 , G06F2203/04103 , G06F2203/04111
Abstract: The present disclosure relates to a display device, a touch panel and a method for manufacturing the touch panel. The method includes: forming a patterned metal lead and a patterned metal bridge on a substrate through one patterning process; depositing an insulation layer and a transparent electrode layer, and forming a pattern of the insulation layer and patterns of a first electrode and a second electrode for touching through one patterning process. In the method, patterns of the insulation layer, the first electrode and the second electrode can be formed simultaneously through one patterning process, thereby increasing efficiency of manufacturing the touch panel at the extreme, saving manufacturing cost and increasing competitiveness of production line.
Abstract translation: 本发明涉及一种显示装置，触摸面板及其制造方法。 该方法包括：通过一个图案化工艺在衬底上形成图案化金属引线和图案化金属桥; 沉积绝缘层和透明电极层，以及形成绝缘层的图案和用于接触一个图案化工艺的第一电极和第二电极的图案。 在该方法中，可以通过一个图案化工艺同时形成绝缘层，第一电极和第二电极的图案，从而提高触摸面板的制造效率，节省制造成本，提高生产线的竞争力。
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25.发明申请Method for Displaying Position of Alignment Mark, Array Substrate and Manufacturing Method Thereof 有权显示对准标记位置的方法，阵列基板及其制造方法公开(公告)号：US20160336273A1
公开(公告)日：2016-11-17
申请号：US15098456
申请日：2016-04-14
Inventor： Binbin Cao , Yinhu Huang , Chengshao Yang
IPC: H01L23/544 , H01L27/12
CPC classification number: H01L23/544 , H01L27/1218 , H01L27/1262 , H01L2223/54426 , H01L2223/54486
Abstract: A method for displaying a position of an alignment mark, an array substrate and a manufacturing method thereof are provided. The method for displaying the position of the alignment mark includes: forming an alignment mark on a surface of a base substrate; forming a first isolation layer covering the alignment mark; forming a via hole in the first isolation layer to expose the alignment mark; applying a first material in the via hole to form a first material pattern; and applying a second material on surfaces of the first material pattern and the first isolation layer to form a second material film, wherein the first material and the second material are configured to have different polarities, so that the second material cannot be attached to the first material pattern.
Abstract translation: 提供一种显示对准标记位置的方法，阵列基板及其制造方法。 用于显示对准标记的位置的方法包括：在基底基板的表面上形成对准标记; 形成覆盖所述对准标记的第一隔离层; 在所述第一隔离层中形成通孔以露出所述对准标记; 在所述通孔中施加第一材料以形成第一材料图案; 以及在所述第一材料图案和所述第一隔离层的表面上施加第二材料以形成第二材料膜，其中所述第一材料和所述第二材料被配置为具有不同的极性，使得所述第二材料不能附着到所述第一材料膜 材质图案
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Patent Agency Ranking
26.发明授权公开(公告)号：US11417769B2
公开(公告)日：2022-08-16
申请号：US16063743
申请日：2017-12-12
Inventor： Binbin Cao , Chao Wang , Lin Sun
IPC: H01L29/786 , H01L21/02 , H01L21/467 , H01L27/12 , H01L29/66
Abstract: Provided are a thin film transistor and method for manufacturing the same, array substrate, display panel and display device. The thin film transistor includes: a gate pattern, a gate insulating layer, an active layer pattern, a source pattern and a drain pattern sequentially stacked. At least one of a surface of the source pattern facing the gate insulating layer, a surface of the drain pattern facing the gate insulating layer, and a surface of the gate pattern facing the gate insulating layer is a target surface which can diffusely reflect lights entering the target surface, to prevent part of the lights from entering the active layer pattern. The display device solves the problem of volt-ampere characteristic curve of the active layer pattern being deflected and a normal operation of the thin film transistor being affected, thereby weakening the influence of lights on the normal operation of the thin film transistor.
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公开(公告)号：US11132092B2
公开(公告)日：2021-09-28
申请号：US15780342
申请日：2017-11-20
Inventor： Binbin Cao , Ke Cao , Li Ai
IPC: G06F3/044
Abstract: A touch substrate, a manufacturing method thereof and a display device. The touch substrate according to the embodiment of the present disclosure includes: a basal substrate; a touch electrode layer disposed on the basal substrate, the touch electrode layer comprising a plurality of touch electrodes; and a filler disposed between any two adjacent touch electrodes of the touch electrode layer. An orthographic projection of the filler on the basal substrate is at least partially located between orthographic projections of two adjacent touch electrodes on the basal substrate. A refractive index of the filler is n3, a refractive index of the basal substrate is n1, a refractive index of the touch electrode is n2, and |n2−n3|
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公开(公告)号：US11114469B2
公开(公告)日：2021-09-07
申请号：US16396726
申请日：2019-04-28
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Bin Zhou , Binbin Cao , Liangchen Yan , Dongfang Wang , Ce Zhao , Luke Ding , Jun Liu
IPC: H01L27/12
Abstract: The present disclosure is in the field of display technologies, and provides an array substrate including an IGZO film layer, a gate layer, and a gate insulating layer. The gate layer is provided with broken lines at a position thereof overlapping the IGZO film layer to form a first gate line and a second gate line. The gate insulating layer is disposed between the IGZO film layer and the gate layer, and is provided with at least two through holes thereon, in which the first gate line is connected with the IGZO film layer through one of the through holes, and the second gate line is connected with the IGZO film layer through another through hole, thus, connecting the IGZO film layer in series into the gate layer.
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29.发明申请公开(公告)号：US20210249541A1
公开(公告)日：2021-08-12
申请号：US16770252
申请日：2019-11-07
Inventor： Binbin Cao
IPC: H01L29/786 , H01L29/66
Abstract: A thin film transistor (10) may include a substrate (100); a buffer layer (300) on a surface of the substrate (100); an active layer (400) on a surface of the buffer layer (300) opposite from the substrate (100); a gate insulating layer (500) on a surface of the active layer (400) opposite from the substrate (100), and a gate (600) on a surface of the gate insulating layer (500) opposite from the substrate (100). A width of the active layer (400) may be smaller than a width of the gate (600), and an orthographic projection of the gate (600) on the substrate (100) may cover an orthographic projection of the active layer (400) on the substrate (100).
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公开(公告)号：US20210210621A1
公开(公告)日：2021-07-08
申请号：US16067366
申请日：2017-11-29
Inventor： Binbin Cao , Lin Sun , Chao Wang
IPC: H01L29/66 , H01L29/786
Abstract: A fabrication method of a thin film transistor is provided. The fabrication method includes: forming a gate electrode, an active layer, a drain electrode and a source electrode on the base substrate, in which the active layer includes a channel region and a second portion on both sides of the channel region, and at least a portion of the channel region is overlapped with the gate electrode; and performing a laser annealing process on a side of the base substrate by using a laser, in which the channel region is shielded without being irradiated by the laser, a resistivity of the second portion of the active layer is lower than a resistivity of the channel region, and the second portion of the active layer is connected with the source electrode and the drain electrode. A thin film transistor, an array substrate and a display device are further provided.
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