公开(公告)号：US11239258B2

公开(公告)日：2022-02-01

申请号：US15773640

申请日：2017-07-11

申请人： Applied Materials, Inc.

发明人： Xiangxin Rui ,  Lai Zhao ,  Jrjyan Jerry Chen ,  Soo Young Choi ,  Yujia Zhai

IPC分类号： H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

摘要： Embodiments of the disclosure generally provide methods of forming a capacitor layer or a gate insulating layer with high dielectric constant as well as low film current leakage and desired film qualities for display applications. In one embodiment, a thin film transistor structure includes a dielectric layer formed on a substrate, wherein the dielectric layer is a zirconium containing material comprising aluminum, and gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes formed above or below the dielectric layer.

公开(公告)号：US11145683B2

公开(公告)日：2021-10-12

申请号：US15648167

申请日：2017-07-12

申请人： Applied Materials, Inc.

发明人： Xiangxin Rui ,  Lai Zhao ,  Jrjyan Jerry Chen ,  Soo Young Choi ,  Yujia Zhai

IPC分类号： H01L27/12 ,  H01L49/02 ,  H01L29/49 ,  H01L29/786

摘要： Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include gate, source and drain electrodes formed on a substrate, and an insulating layer formed on a substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer formed above or below the gate, source and drain electrodes.

公开(公告)号：US09502686B2

公开(公告)日：2016-11-22

申请号：US14339705

申请日：2014-07-24

申请人： Applied Materials, Inc.

发明人： Jrjyan Jerry Chen ,  Soo Young Choi

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/312 ,  H01L35/24 ,  H01L51/52 ,  H01L51/56

CPC分类号： H01L51/5256 ,  H01L51/56 ,  H01L2251/5346 ,  H01L2251/558

摘要： Methods for forming an OLED device are described. An encapsulation structure having organic buffer layer and an interface layer disposed on the organic buffer layer sandwiched between barrier layers is deposited over an OLED structure. In one example, the method includes depositing a first barrier layer on a region of a substrate having an OLED structure disposed thereon, depositing a buffer layer with a fluorine-containing plasma formed from a first gas mixture containing a polymer gas precursor and a fluorine containing gas on the first barrier layer, depositing an interface layer on the buffer layer with a second gas mixture containing the polymer gas precursor, and depositing a second barrier layer on the interface layer.

摘要翻译： 描述用于形成OLED器件的方法。 具有有机缓冲层和设置在夹在阻挡层之间的有机缓冲层上的界面层的封装结构沉积在OLED结构上。 在一个示例中，该方法包括在其上设置有OLED结构的衬底的区域上沉积第一阻挡层，从含有聚合物气体前体的第一气体混合物形成的含氟等离子体形成缓冲层， 在第一阻挡层上形成气体，在含有聚合物气体前体的第二气体混合物的缓冲层上沉积界面层，以及在界面层上沉积第二阻挡层。

公开(公告)号：US09331311B2

公开(公告)日：2016-05-03

申请号：US14174248

申请日：2014-02-06

申请人： Applied Materials, Inc.

发明人： Jrjyan Jerry Chen

IPC分类号： H01L29/08 ,  H01L51/56 ,  C23C16/40 ,  H01L51/52

CPC分类号： H01L51/5256 ,  C23C16/401 ,  H01L51/0034 ,  H01L51/0094 ,  H01L51/5253 ,  H01L51/56

摘要： Methods for forming an OLED device are described. An encapsulation structure having organic buffer layer sandwiched between barrier layers is deposited over an OLED structure. The buffer layer is formed with a fluorine-containing plasma. The second barrier layer is then deposited over the buffer layer. Additionally, to ensure good adhesion, a buffer adhesion layer is formed between the buffer layer and the first barrier layer. Finally, to ensure good transmittance, a stress reduction layer is deposited between the buffer layer and the second barrier layer.

摘要翻译： 描述用于形成OLED器件的方法。 具有夹在阻挡层之间的有机缓冲层的封装结构沉积在OLED结构上。 缓冲层由含氟等离子体形成。 然后将第二阻挡层沉积在缓冲层上。 此外，为了确保良好的粘附性，在缓冲层和第一阻挡层之间形成缓冲粘附层。 最后，为了确保良好的透光率，在缓冲层和第二阻挡层之间沉积应力减小层。

公开(公告)号：US08901015B2

公开(公告)日：2014-12-02

申请号：US13768921

申请日：2013-02-15

申请人： Applied Materials, Inc.

发明人： Jrjyan Jerry Chen ,  Tae K. Won ,  Beom Soo Park ,  Young Jin Choi ,  Soo Young Choi

IPC分类号： H01L21/31 ,  C23C16/34 ,  H01L51/52 ,  C23C16/26

CPC分类号： H01L51/5256 ,  C23C16/26 ,  C23C16/345

摘要： A method and apparatus for depositing a material layer, such as encapsulating film, onto a substrate is described. In one embodiment, an encapsulating film formation method includes delivering a gas mixture into a processing chamber, the gas mixture comprising a silicone-containing gas, a first nitrogen-containing gas, a second nitrogen-containing gas and hydrogen gas; energizing the gas mixture within the processing chamber by applying between about 0.350 watts/cm2 to about 0.903 watts/cm2 to a gas distribution plate assembly spaced about 800 mils to about 1800 mils above a substrate positioned within the processing chamber; maintaining the energized gas mixture within the processing chamber at a pressure of between about 0.5 Torr to about 3.0 Torr; and depositing an inorganic encapsulating film on the substrate in the presence of the energized gas mixture. In other embodiments, an organic dielectric layer is sandwiched between inorganic encapsulating layers.

摘要翻译： 描述了用于将材料层（例如封装膜）沉积到基底上的方法和装置。 在一个实施方案中，封装膜形成方法包括将气体混合物输送到处理室中，所述气体混合物包含含硅氧烷气体，第一含氮气体，第二含氮气体和氢气; 通过向位于处理室内的基板上方间隔约800密耳至约1800密耳的气体分布板组件施加约0.350瓦特/平方厘米至约0.903瓦特/平方厘米，对该处理室内的气体混合物进行激励; 将加压气体混合物在处理室内保持在约0.5托至约3.0托之间的压力; 以及在通电的气体混合物的存在下在基底上沉积无机封装膜。 在其他实施例中，有机介电层夹在无机封装层之间。