公开(公告)号：US20210391156A1

公开(公告)日：2021-12-16

申请号：US16898244

申请日：2020-06-10

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Philip Allan Kraus ,  Thai Cheng Chua ,  Hanh Nguyen ,  Anantha Subramani

IPC: H01J37/32 ,  B08B7/00 ,  H05H1/46

Abstract: Embodiments disclosed herein include a cleaning module for the exhaust line of a chamber. In an embodiment, a mobile cleaning module comprises a chamber where the chamber comprises a first opening and a second opening. In an embodiment, the cleaning module further comprises a lid to seal the first opening. In an embodiment, the lid comprises a dielectric plate, a dielectric resonator coupled to the dielectric plate, a monopole antenna positioned in a hole into the dielectric resonator, and a conductive layer surrounding the dielectric resonator.

公开(公告)号：US20180261720A1

公开(公告)日：2018-09-13

申请号：US15980583

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Mingwei ZHU ,  Nag B. PATIBANDLA ,  Rongjun WANG ,  Daniel Lee DIEHL ,  Vivek AGRAWAL ,  Anantha Subramani

IPC: H01L33/12 ,  H01L29/20 ,  H01L33/00 ,  H01J37/34 ,  H01J37/32 ,  H01L31/18

CPC classification number: H01L33/12 ,  H01J37/32467 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/347 ,  H01L29/2003 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  Y02E10/544

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

公开(公告)号：US20210328104A1

公开(公告)日：2021-10-21

申请号：US17362794

申请日：2021-06-29

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC: H01L33/12 ,  H01J37/34 ,  H01L31/18 ,  H01L33/00 ,  H01J37/32 ,  H01L29/20

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

公开(公告)号：US10109481B2

公开(公告)日：2018-10-23

申请号：US14410790

申请日：2013-07-01

Applicant: Applied Materials, Inc.

Inventor： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Vivek Agrawal ,  Anantha Subramani ,  Daniel Lee Diehl ,  Xianmin Tang

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/322 ,  H01J37/34 ,  C23C14/00 ,  C23C14/06

Abstract: Embodiments of the invention described herein generally relate to an apparatus and methods for forming high quality buffer layers and Group III-V layers that are used to form a useful semiconductor device, such as a power device, light emitting diode (LED), laser diode (LD) or other useful device. Embodiments of the invention may also include an apparatus and methods for forming high quality buffer layers, Group III-V layers and electrode layers that are used to form a useful semiconductor device. In some embodiments, an apparatus and method includes the use of one or more cluster tools having one or more physical vapor deposition (PVD) chambers that are adapted to deposit a high quality aluminum nitride (AlN) buffer layer that has a high crystalline orientation on a surface of a plurality of substrates at the same time.

公开(公告)号：US09666416B2

公开(公告)日：2017-05-30

申请号：US14954622

申请日：2015-11-30

Applicant: Applied Materials, Inc.

Inventor： John C. Forster ,  Anantha Subramani ,  Wei D. Wang

IPC: C23C14/24 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  C23C14/34

CPC classification number: H01J37/32477 ,  C23C14/34 ,  H01J37/32495 ,  H01L21/02043 ,  H01L21/67005

Abstract: A method and apparatus are described for reducing particle contamination in a plasma processing chamber. In one embodiment, a pasting disk is provided which includes a disk-shaped base of high-resistivity material that has an electrically conductive pasting material layer applied to a top surface of the base so that the pasting material layer partially covers the top surface of the base. The pasting disk is sputter etched to deposit conductive pasting material over a wide area on the interior surfaces of a plasma processing chamber while minimizing deposition on dielectric components that are used to optimize the sputter etch process during substrate processing.

公开(公告)号：US09376752B2

公开(公告)日：2016-06-28

申请号：US13789222

申请日：2013-03-07

Applicant: Applied Materials, Inc.

Inventor： Ashish Goel ,  Anantha Subramani

IPC: C23C16/458 ,  C23C14/50 ,  H01J37/34 ,  H01L21/67 ,  H01L21/687 ,  C23C14/56 ,  C23C14/54

CPC classification number: C23C16/4585 ,  C23C14/50 ,  C23C14/541 ,  C23C14/564 ,  H01J37/3408 ,  H01J37/3441 ,  H01L21/67115 ,  H01L21/68735

Abstract: Disclosed are apparatus and methods for material and thermal processing of substrates in a single chamber. In one embodiment, an edge ring is provided. The edge ring includes an annular body having an inner peripheral edge, a first surface, and a second surface opposite the first surface, a first raised member extending substantially orthogonally from the second surface, a second raised member extending from the second surface adjacent the first raised member and separated from the first raised member by a first depression, and a third raised member extending from the second surface adjacent the second raised member and separated by a second depression, the second depression comprising a sloped surface having a reflectivity value that is different than a reflectivity value of the first surface.

Abstract translation: 公开了用于在单个室中的衬底的材料和热处理的装置和方法。 在一个实施例中，提供了一个边缘环。 边缘环包括具有内周边缘，第一表面和与第一表面相对的第二表面的环形主体，从第二表面基本正交地延伸的第一凸起构件，从邻近第一表面的第二表面延伸的第二凸起构件 并且由第二凸起部件与第二凸起部件相邻地延伸并且由第二凹部分开，第二凹部包括具有不同的反射率值的倾斜面， 比第一表面的反射率值。