Abstract:
A reflector (2) comprising a plate (4) supported by a substrate (8), wherein the plate has a reflective surface (5) and is secured to the substrate by adhesive free bonding, and wherein a cooling channel array (10) is provided in the reflector. The channels (16) of the cooling channel array may be formed from open channels in a surface of the substrate, the open channels being closed by the plate to create the channels.
Abstract:
A system is disclosed for reducing overlay errors by controlling gas flow around a patterning device of a lithographic apparatus. The lithographic apparatus includes an illumination system configured to condition a radiation beam. The lithographic apparatus further includes a movable stage comprising a support structure that may be configured to support a patterning device. The patterning device may be configured to impart the radiation beam with a pattern in its cross-section to form a patterned radiation beam. In addition, the lithographic apparatus comprises a plate (410) positioned between the movable stage (401) and the projection system (208). The plate includes an opening (411) that comprises a first sidewall (411a) and a second sidewall (411b). The plate may be configured to provide a gas flow pattern (424) in a region between the movable stage and the projection system that is substantially perpendicular to an optical axis of the illumination system.
Abstract:
A system (300) for supporting an exchangeable object (302) can include a movable structure (304) and an object holder (306) configured to be movable relative to the movable structure. The object holder can be configured to hold the exchangeable object. The system can also include a first actuator assembly (308) and second actuator assembly (316). The first actuator assembly can be configured to apply a force to the object holder to translate the exchangeable object generally along a plane. The second actuator assembly can be configured to apply a bending moment to the object holder. The exchangeable object can be a patterning device of a lithographic apparatus.
Abstract:
A lithographic projection apparatus includes a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; a liquid supply system configured to provide liquid to a space between the projection system and the substrate; and a shutter configured to isolate the space from the substrate or a space to be occupied by a substrate.
Abstract:
A method of patterning lithographic substrates that includes using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates. The method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly, and applying variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.
Abstract:
A lithographic projection apparatus is disclosed for use with an immersion liquid positioned between the projection system and a substrate. Several methods and mechanism are disclosed to protect components of the projection system, substrate table and a liquid confinement system. These include providing a protective coating on a final element of the projection system as well as providing one or more sacrificial bodies upstream of the components. A two component final optical element of CaF2 is also disclosed.
Abstract:
A lithographic projection apparatus includes a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; a liquid supply system configured to provide liquid to a space between the projection system and the substrate; and a shutter configured to isolate the space from the substrate or a space to be occupied by a substrate.
Abstract:
A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5× and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between centre points of the first and second patterned areas corresponds with a dimension of a conventional exposure.
Abstract:
A method for calibrating an encoder scale having an array of marks in a first direction, includes moving the encoder scale in the first direction relative to a first encoder-type sensor, a second encoder-type sensor and a third encoder-type sensor, wherein the first encoder-type sensor and the second encoder-type sensor are fixedly spaced in the first direction at a first distance relative to each other, wherein the second encoder-type sensor and the third encoder-type sensor are fixedly spaced in the first direction at a second distance relative to each other.