公开(公告)号：US20230023764A1

公开(公告)日：2023-01-26

申请号：US17786520

申请日：2020-12-15

Applicant: APPLIED MATERIALS, INC.

Inventor： David W. GROECHEL ,  Michael R. RICE ,  Gang Grant PENG ,  Rui CHENG ,  Zubin HUANG ,  Han WANG ,  Karthik JANAKIRAMAN ,  Diwakar KEDLAYA ,  Paul L. BRILLHART ,  Abdul Aziz KHAJA

IPC: H01L21/285 ,  H01L21/67

Abstract: Methods and apparatus for surface profiling and texturing of chamber components for use in a process chamber, such surface-profiled or textured chamber components, and method of use of same are provided herein. In some embodiments, a method includes measuring a parameter of a reference substrate or a heated pedestal using one or more sensors and modifying a surface of a chamber component physically based on the measured parameter.

公开(公告)号：US20210210339A1

公开(公告)日：2021-07-08

申请号：US15778167

申请日：2017-12-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Pramit MANNA ,  Rui CHENG ,  Abhijit Basu MALLICK ,  Shishi JIANG

IPC: H01L21/02

Abstract: A method for forming a conformal hermetic silicon nitride film. The method includes using thermal chemical vapor deposition with a polysilane gas to produce an ultra-conformal amorphous silicon film on a substrate, then treating the film with ammonia or nitrogen plasmas to convert the amorphous silicon film to a conformal hermetic silicon nitride. In some embodiments, the amorphous silicon deposition and the plasma treatment are performed in the same processing chamber. In some embodiments, the amorphous silicon deposition and the plasma treatment are repeated until a desired silicon nitride film thickness is reached.

公开(公告)号：US20210147981A1

公开(公告)日：2021-05-20

申请号：US16636659

申请日：2018-08-10

Applicant: Applied Materials, Inc.

Inventor： Rui CHENG ,  Karthik JANAKIRAMAN ,  Zubin HUANG

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46

Abstract: In one aspect, an apparatus includes a chamber body, a blocker plate for delivering process gases into a gas mixing volume, and a face plate having holes through which the mixed gas is distributed to a substrate. In another aspect, the face plate may include a first region with a recess relative to a second region. In another aspect, the blocker plate may include a plurality of regions, each region having different hole patterns/geometries and/or flow profiles. In another aspect, the apparatus may include a radiation shield disposed below a bottom of the substrate support. A shaft or stem of the substrate support includes holes at an upper end thereof near the substrate support.

公开(公告)号：US20200335339A1

公开(公告)日：2020-10-22

申请号：US16867095

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Tzu-shun YANG ,  Rui CHENG ,  Karthik JANAKIRAMAN ,  Zubin HUANG ,  Diwakar KEDLAYA ,  Meenakshi GUPTA ,  Srinivas GUGGILLA ,  Yung-chen LIN ,  Hidetaka OSHIO ,  Chao LI ,  Gene LEE

IPC: H01L21/033

Abstract: The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.

公开(公告)号：US20200258720A1

公开(公告)日：2020-08-13

申请号：US16785331

申请日：2020-02-07

Applicant: Applied Materials, Inc.

Inventor： Krishna NITTALA ,  Diwakar N. KEDLAYA ,  Karthik JANAKIRAMAN ,  Yi YANG ,  Rui CHENG

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/505 ,  C23C16/515

Abstract: Systems and methods of using pulsed RF plasma to form amorphous and microcrystalline films are discussed herein. Methods of forming films can include (a) forming a plasma in a process chamber from a film precursor and (b) pulsing an RF power source to cause a duty cycle on time (TON) of a duty cycle of a pulse generated by the RF power source to be less than about 20% of a total cycle time (TTOT) of the duty cycle to form the film. The methods can further include (c) depositing a first film interlayer on a substrate in the process chamber; (d) subsequent to (c), purging the process chamber; and (e) subsequent to (d), introducing a hydrogen plasma to the process chamber. Further in the method, (b)-(e) are repeated to form a film. The film can have an in-film hydrogen content of less than about 10%.

公开(公告)号：US20200234932A1

公开(公告)日：2020-07-23

申请号：US16703140

申请日：2019-12-04

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra PARIMI ,  Zubin HUANG ,  Jian LI ,  Satish RADHAKRISHNAN ,  Rui CHENG ,  Diwakar N. KEDLAYA ,  Juan Carlos ROCHA-ALVAREZ ,  Umesh M. KELKAR ,  Karthik JANAKIRAMAN ,  Sarah Michelle BOBEK ,  Prashant Kumar KULSHRESHTHA ,  Vinay K. PRABHAKAR ,  Byung Seok KWON

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50

Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.

公开(公告)号：US20200161171A1

公开(公告)日：2020-05-21

申请号：US16579759

申请日：2019-09-23

Applicant: Applied Materials, Inc.

Inventor： Benjamin COLOMBEAU ,  Theresa Kramer GUARINI ,  Malcolm BEVAN ,  Rui CHENG

IPC: H01L21/762 ,  H01L21/02 ,  H01J37/32 ,  C23C16/56 ,  C23C16/24 ,  C23C16/28 ,  C23C16/50

Abstract: Generally, examples described herein relate to methods and processing systems for forming isolation structures (e.g., shallow trench isolations (STIs)) between fins on a substrate. In an example, fins are formed on a substrate. A liner layer is conformally formed on and between the fins. Forming the liner layer includes conformally depositing a pre-liner layer on and between the fins, and densifying, using a plasma treatment, the pre-liner layer to form the liner layer. A dielectric material is formed on the liner layer.

公开(公告)号：US20190074218A1

公开(公告)日：2019-03-07

申请号：US16184117

申请日：2018-11-08

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Rui CHENG ,  Kelvin CHAN ,  Abhijit Basu MALLICK

IPC: H01L21/768 ,  C23C16/46 ,  C23C16/34 ,  C23C16/16 ,  H01L21/285 ,  C23C16/04

Abstract: Methods for forming thin films in high aspect ratio feature definitions are provided. In one implementation, a method of processing a substrate in a process chamber is provided. The method comprises flowing a metal organic containing precursor gas comprising a ligand into an interior processing volume of a process chamber, flowing a precursor gas comprising the ligand into the processing volume and thermally decomposing the metal-containing precursor gas comprising the ligand and the precursor gas comprising the ligand in the interior processing volume to deposit a metal-containing layer over at least one or more sidewalls and a bottom surface of a feature definition in and below a surface of a dielectric layer on the substrate.

公开(公告)号：US20170110321A1

公开(公告)日：2017-04-20

申请号：US14961920

申请日：2015-12-08

Applicant: Applied Materials, Inc.

Inventor： Rui CHENG ,  Abhijit Basu MALLICK ,  Srinivas GANDIKOTA ,  Pramit MANNA

IPC: H01L21/225 ,  H01L29/167 ,  H01L21/02 ,  H01L29/66 ,  H01L21/324

CPC classification number: H01L21/2254 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/324 ,  H01L29/167 ,  H01L29/66795 ,  H01L29/66803

Abstract: Embodiments described herein generally relate to doping of three dimensional (3D) structures on a substrate. In one embodiment, a conformal dopant containing film may be deposited over the 3D structures. Suitable dopants that may be incorporated in the film may include boron, phosphorous, and other suitable dopants. The film may be subsequently annealed to diffuse the dopants into the 3D structures.

公开(公告)号：US20240339316A1

公开(公告)日：2024-10-10

申请号：US18746799

申请日：2024-06-18

Applicant: Applied Materials, Inc.

Inventor： Aykut AYDIN ,  Rui CHENG ,  Karthik JANAKIRAMAN ,  Abhijit Basu MALLICK ,  Takehito KOSHIZAWA ,  Bo QI

IPC: H01L21/02

CPC classification number: H01L21/02123 ,  H01L21/02211 ,  H01L21/02271

Abstract: Embodiments of the present disclosure generally relate to processes for forming silicon- and boron-containing films for use in, e.g., spacer-defined patterning applications. In an embodiment, a spacer-defined patterning process is provided. The process includes disposing a substrate in a processing volume of a processing chamber, the substrate having patterned features formed thereon, and flowing a first process gas into the processing volume, the first process gas comprising a silicon-containing species, the silicon-containing species having a higher molecular weight than SiH4. The process further includes flowing a second process gas into the processing volume, the second process gas comprising a boron-containing species, and depositing, under deposition conditions, a conformal film on the patterned features, the conformal film comprising silicon and boron.