公开(公告)号：US20220119953A1

公开(公告)日：2022-04-21

申请号：US17075812

申请日：2020-10-21

Applicant: Applied Materials, Inc.

Inventor： Jui-Yuan HSU ,  Krishna NITTALA ,  Pramit MANNA ,  Karthik JANAKIRAMAN

IPC: C23C16/50 ,  H01J37/32 ,  C23C16/26 ,  C23C16/458 ,  C23C16/56

Abstract: Embodiments of the present disclosure generally relate to hardmasks and to processes for forming hardmasks by plasma-enhanced chemical vapor deposition (PECVD). In an embodiment, a process for forming a hardmask layer on a substrate is provided. The process includes introducing a substrate to a processing volume of a PECVD chamber, the substrate on a substrate support, the substrate support comprising an electrostatic chuck, and flowing a process gas into the processing volume within the PECVD chamber, the process gas comprising a carbon-containing gas. The process further includes forming, under plasma conditions, an energized process gas from the process gas in the processing volume, electrostatically chucking the substrate to the substrate support, depositing a first carbon-containing layer on the substrate while electrostatically chucking the substrate, and forming the hardmask layer by depositing a second carbon-containing layer on the substrate.

公开(公告)号：US20180350621A1

公开(公告)日：2018-12-06

申请号：US15995698

申请日：2018-06-01

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Shishi JIANG ,  Abhijit Basu MALLICK ,  Kurtis LESCHKIES

IPC: H01L21/311 ,  H01L21/02

Abstract: Embodiments of the disclosure generally relate to a method for dry stripping a boron carbide layer deposited on a semiconductor substrate. In one embodiment, the method includes loading the substrate with the boron carbide layer into a pressure vessel, exposing the substrate to a processing gas comprising an oxidizer at a pressure between about 500 Torr and 60 bar, heating the pressure vessel to a temperature greater than a condensation point of the processing gas and removing one or more products of a reaction between the processing gas and the boron carbide layer from the pressure vessel.

公开(公告)号：US20180350563A1

公开(公告)日：2018-12-06

申请号：US15991877

申请日：2018-05-29

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Abhijit Basu MALLICK ,  Kurtis LESCHKIES ,  Steven VERHAVERBEKE ,  Sanjay KAMATH ,  Zongbin WANG ,  Hanwen ZHANG ,  Shishi JIANG

IPC: H01J37/32

Abstract: Embodiments of the disclosure generally relate to a method of processing a semiconductor substrate at a temperature less than 250 degrees Celsius. In one embodiment, the method includes loading the substrate with the deposited film into a pressure vessel, exposing the substrate to a processing gas comprising an oxidizer at a pressure greater than about 2 bars, and maintaining the pressure vessel at a temperature between a condensation point of the processing gas and about 250 degrees Celsius.

公开(公告)号：US20170278709A1

公开(公告)日：2017-09-28

申请号：US15602862

申请日：2017-05-23

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Pramit MANNA ,  Li Yan MIAO ,  Deenesh PADHI ,  Bok Hoen KIM ,  Christopher Dennis BENCHER

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/027 ,  H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/0337 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0273 ,  H01L21/31058 ,  H01L21/31138 ,  H01L2221/00

Abstract: Embodiments of the disclosure relate to deposition of a conformal organic material over a feature formed in a photoresist or a hardmask, to decrease the critical dimensions and line edge roughness. In various embodiments, an ultra-conformal carbon-based material is deposited over features formed in a high-resolution photoresist. The conformal organic layer formed over the photoresist thus reduces both the critical dimensions and the line edge roughness of the features.

公开(公告)号：US20170162417A1

公开(公告)日：2017-06-08

申请号：US15370682

申请日：2016-12-06

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Hiroji HANAWA ,  Juan Carlos ROCHA-ALVAREZ ,  Pramit MANNA ,  Michael Wenyoung TSIANG ,  Allen KO ,  Wenjiao WANG ,  Yongjing LIN ,  Prashant Kumar KULSHRESHTHA ,  Xinhai HAN ,  Bok Hoen KIM ,  Kwangduk Douglas LEE ,  Karthik Thimmavajjula NARASIMHA ,  Ziqing DUAN ,  Deenesh PADHI

IPC: H01L21/683 ,  C23C16/505 ,  C23C16/458

CPC classification number: H01L21/6833 ,  C23C16/4586 ,  C23C16/509 ,  H01J37/32091 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556

Abstract: Techniques are disclosed for methods and apparatuses of an electrostatic chuck suitable for operating at high operating temperatures. In one example, a substrate support assembly is provided. The substrate support assembly includes a substantially disk-shaped ceramic body having an upper surface, a cylindrical sidewall, and a lower surface. The upper surface is configured to support a substrate thereon for processing the substrate in a vacuum processing chamber. The cylindrical sidewall defines an outer diameter of the ceramic body. The lower surface is disposed opposite the upper surface. An electrode is disposed in the ceramic body. A circuit is electrically connected to the electrode. The circuit includes a DC chucking circuit, a first RF drive circuit, and a second RF dive circuit. The DC chucking circuit, the first RF drive circuit and the second RF drive circuit are electrically coupled with the electrode.

公开(公告)号：US20170004974A1

公开(公告)日：2017-01-05

申请号：US15185282

申请日：2016-06-17

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Abhijit Basu MALLICK

IPC: H01L21/3105 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/02 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/033 ,  H01L21/0337 ,  H01L21/3213 ,  H01L21/76281 ,  H01L21/76283

Abstract: Embodiments described herein generally provide a method for filling features formed on a substrate. In one embodiment, a method for selectively forming a silicon oxide layer on a substrate is provided. The method includes selectively depositing a silicon oxide layer within a patterned feature formed on a surface of a substrate, wherein the patterned feature comprises one or more sidewalls and a deposition surface at a bottom of the patterned feature, the one or more sidewalls comprise a silicon oxide, a silicon nitride, or a combination thereof, the deposition surface essentially consists of silicon, and the selectively deposited silicon oxide layer is formed on the deposition surface by flowing tetraethyl orthosilicate (TEOS) and ozone over the patterned feature.

Abstract translation: 本文描述的实施例通常提供用于填充形成在基底上的特征的方法。 在一个实施例中，提供了在衬底上选择性地形成氧化硅层的方法。 该方法包括在形成在衬底的表面上的图案化特征中选择性地沉积氧化硅层，其中图案化特征包括在图案化特征的底部的一个或多个侧壁和沉积表面，所述一个或多个侧壁包括硅 氧化物，氮化硅或其组合，沉积表面基本上由硅组成，并且通过在图案化特征上流动原硅酸四乙酯（TEOS）和臭氧，在沉积表面上形成选择性沉积的氧化硅层。

公开(公告)号：US20160293483A1

公开(公告)日：2016-10-06

申请号：US15083590

申请日：2016-03-29

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Rui CHENG ,  Kelvin CHAN ,  Abhijit Basu MALLICK

IPC: H01L21/768

CPC classification number: H01L21/76846 ,  C23C16/045 ,  C23C16/16 ,  C23C16/342 ,  C23C16/46 ,  H01L21/28556 ,  H01L21/76864 ,  H01L21/76877

Abstract: Implementations of the present disclosure generally relate to methods for forming thin films in high aspect ratio feature definitions. In one implementation, a method of processing a substrate in a process chamber is provided. The method comprises flowing a boron-containing precursor comprising a ligand into an interior processing volume of a process chamber, flowing a nitrogen-containing precursor comprising the ligand into the interior processing volume and thermally decomposing the boron-containing precursor and the nitrogen-containing precursor in the interior processing volume to deposit a boron nitride layer over at least one or more sidewalls and a bottom surface of a high aspect ratio feature definition formed in and below a surface of a dielectric layer on the substrate.

Abstract translation: 本公开的实施方式一般涉及用于在高纵横比特征定义中形成薄膜的方法。 在一个实施方案中，提供了处理室中的衬底的处理方法。 该方法包括将包含配体的含硼前体流入处理室的内部处理体积，将含有配体的含氮前体流入内部处理体积并热分解含硼前体和含氮前体 在内部处理体积中，在形成在基板上的电介质层的表面中和下方的高纵横比特征定义的至少一个或多个侧壁和底表面上沉积氮化硼层。

公开(公告)号：US20150228463A1

公开(公告)日：2015-08-13

申请号：US14619138

申请日：2015-02-11

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Martin Jay SEAMONS ,  Abhijit Basu MALLICK ,  Bok Hoen KIM ,  Mukund SRINIVASAN

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32862 ,  C23C16/26 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32357

Abstract: Methods for cleaning a processing chamber to remove amorphous carbon containing residuals from the processing chamber are provided. The cleaning process utilizes a low frequency RF bias power during the cleaning process. In one embodiment, a method of cleaning a processing chamber includes supplying a cleaning gas mixture into a processing chamber, applying a RF bias power of about 2 MHz or lower to a substrate support assembly disposed in the processing chamber to form a plasma in the cleaning gas mixture in the processing chamber, and removing deposition residuals from the processing chamber.

Abstract translation: 提供了用于清洁处理室以从处理室去除含有残留物的无定形碳的方法。 清洁过程在清洁过程中利用低频RF偏置功率。 在一个实施例中，清洁处理室的方法包括将清洁气体混合物供应到处理室中，向设置在处理室中的基板支撑组件施加约2MHz或更低的RF偏置功率以在清洁中形成等离子体 处理室中的气体混合物，并且从处理室去除沉积残余物。

公开(公告)号：US20150214039A1

公开(公告)日：2015-07-30

申请号：US14590624

申请日：2015-01-06

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Kiran V. THADANI ,  Abhijit Basu MALLICK

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/56 ,  H01J37/32449 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/68742 ,  H01L21/68792

Abstract: Implementations described herein generally relate to methods for dielectric gap-fill. In one implementation, a method of depositing a silicon oxide layer on a substrate is provided. The method comprises introducing a cyclic organic siloxane precursor and an aliphatic organic siloxane precursor into a deposition chamber, reacting the cyclic organic siloxane precursor and the aliphatic organic siloxane precursor with atomic oxygen to form the silicon oxide layer on a substrate positioned in the deposition chamber, wherein the substrate is maintained at a temperature between about 0° C. and about 200° C. as the silicon oxide layer is formed, wherein the silicon oxide layer is initially flowable following deposition, and wherein a ratio of a flow rate of the cyclic organic siloxane precursor to a flow rate of the aliphatic organic siloxane precursor is at least 2:1 and curing the deposited silicon oxide layer.

Abstract translation: 本文描述的实现方式通常涉及电介质间隙填充的方法。 在一个实施方案中，提供了在衬底上沉积氧化硅层的方法。 该方法包括将环状有机硅氧烷前体和脂族有机硅氧烷前体引入沉积室，使环状有机硅氧烷前体与脂族有机硅氧烷前体与原子氧反应，在位于沉积室中的基底上形成氧化硅层， 其中当形成氧化硅层时，所述衬底保持在约0℃至约200℃之间的温度，其中所述氧化硅层在沉积后最初可流动，并且其中所述循环 有机硅氧烷前体与脂族有机硅氧烷前体的流速为至少2:1，并固化沉积的氧化硅层。

公开(公告)号：US20150196933A1

公开(公告)日：2015-07-16

申请号：US14574101

申请日：2014-12-17

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Kiran V. THADANI ,  Abhijit Basu MALLICK

IPC: B05D3/06 ,  B05D3/02 ,  B05D3/04

CPC classification number: H01L21/02216 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/67115

Abstract: Embodiments of the invention generally relate to methods of curing a carbon/silicon-containing low k material. The methods generally include delivering a deposition precursor to the processing region, the deposition precursor comprising a carbon/silicon-containing precursor, forming a remote plasma in the presence of an oxygen containing precursor, delivering the activated oxygen containing precursor to the deposition precursor to deposit a carbon/silicon-containing low k material on the substrate and curing the carbon/silicon-containing low k material in the presence of a carbon oxide gas.

Abstract translation: 本发明的实施方案一般涉及固化含碳/含硅低k材料的方法。 所述方法通常包括将沉积前体输送到处理区域，沉积前体包括含碳/硅的前体，在含氧前体存在下形成远程等离子体，将活化的含氧前体输送到沉积前体以沉积 在基底上的含碳/硅的低k材料，并在碳氧化物气体存在下固化碳/含硅低k材料。