公开(公告)号：US20180350563A1

公开(公告)日：2018-12-06

申请号：US15991877

申请日：2018-05-29

申请人： Applied Materials, Inc.

发明人： Pramit MANNA ,  Abhijit Basu MALLICK ,  Kurtis LESCHKIES ,  Steven VERHAVERBEKE ,  Sanjay KAMATH ,  Zongbin WANG ,  Hanwen ZHANG ,  Shishi JIANG

IPC分类号： H01J37/32

摘要： Embodiments of the disclosure generally relate to a method of processing a semiconductor substrate at a temperature less than 250 degrees Celsius. In one embodiment, the method includes loading the substrate with the deposited film into a pressure vessel, exposing the substrate to a processing gas comprising an oxidizer at a pressure greater than about 2 bars, and maintaining the pressure vessel at a temperature between a condensation point of the processing gas and about 250 degrees Celsius.