公开(公告)号：US20230123089A1

公开(公告)日：2023-04-20

申请号：US18083173

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Shailendra SRIVASTAVA ,  Sai Susmita ADDEPALLI ,  Nikhil Sudhindrarao JORAPUR ,  Daemian Raj Benjamin RAJ ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Gregory Eugene CHICHKANOFF ,  Xinhai HAN ,  Masaki OGATA ,  Kristopher ENSLOW ,  Wenjiao WANG

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

公开(公告)号：US20230047451A1

公开(公告)日：2023-02-16

申请号：US17974408

申请日：2022-10-26

Applicant: Applied Materials, Inc.

Inventor： Nitin PATHAK ,  Amit Kumar BANSAL ,  Tuan Anh NGUYEN ,  Thomas RUBIO ,  Badri N. RAMAMURTHI ,  Juan Carlos ROCHA-ALVAREZ

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/44

Abstract: Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.

公开(公告)号：US20200263301A1

公开(公告)日：2020-08-20

申请号：US16867307

申请日：2020-05-05

Applicant: Applied Materials, Inc.

Inventor： Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Sam H. KIM ,  Tuan Anh NGUYEN

IPC: C23C16/455

Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and an underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.

公开(公告)号：US20200161093A1

公开(公告)日：2020-05-21

申请号：US16663215

申请日：2019-10-24

Applicant: Applied Materials, Inc.

Inventor： Xiaopu LI ,  Kallol BERA ,  Edward P. HAMMOND, IV ,  Jonghoon BAEK ,  Amit Kumar BANSAL ,  Jun MA ,  Satoru KOBAYASHI

IPC: H01J37/32 ,  C23C16/505

Abstract: Embodiments described herein relate to apparatus and techniques for radio frequency (RF) phase control in a process chamber. A process volume is defined in the process chamber by a faceplate electrode and a support pedestal. A grounding bowl is disposed within the process chamber about the support pedestal opposite the process volume. The grounding bowl substantially fills a volume other than the process volume below the support pedestal. A phase tuner circuit is coupled to an RF mesh disposed in the support pedestal and the faceplate electrode. The tuner circuit adjusts a phase difference between a phase of the faceplate electrode and a phase of the RF mesh.

公开(公告)号：US20200043704A1

公开(公告)日：2020-02-06

申请号：US16516419

申请日：2019-07-19

Applicant: Applied Materials, Inc.

Inventor： Tejas ULAVI ,  Amit Kumar BANSAL ,  Nitin PATHAK ,  Ajit BALAKRISHNA

IPC: H01J37/32 ,  C23C16/455 ,  H01L21/02

Abstract: Embodiments of the present disclosure relate to apparatus for improving quality of films deposited on a substrate by a CVD process. More specifically, a branched gas feed assembly uniformly distributes a process gas entering an annular plenum. Each conduit of a first plurality of conduits having substantially equal flow conductance is in fluid communication with one or more conduits of a second plurality of conduits having substantially equal flow conductance. Each conduit of the second plurality of conduits terminates at one of a plurality of outlets. Each outlet of the plurality of outlets is in fluid communication with one or more inlet ports of a plurality of inlet ports formed in the annular plenum. Each inlet port of the plurality of inlet ports is spaced equidistant about a central axis of the annular plenum.

公开(公告)号：US20200035522A1

公开(公告)日：2020-01-30

申请号：US16588959

申请日：2019-09-30

Applicant: Applied Materials, Inc.

Inventor： Tuan Anh NGUYEN ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02

Abstract: A method and apparatus for processing a semiconductor is disclosed herein. In one embodiment, a processing system for semiconductor processing is disclosed. The processing chamber includes two transfer chambers, a processing chamber, and a rotation module. The processing chamber is coupled to the transfer chamber. The rotation module is positioned between the transfer chambers. The rotation module is configured to rotate the substrate. The transfer chambers are configured to transfer the substrate between the processing chamber and the transfer chamber. In another embodiment, a method for processing a substrate on the apparatus is disclosed herein.

公开(公告)号：US20190203350A1

公开(公告)日：2019-07-04

申请号：US16296343

申请日：2019-03-08

Applicant: Applied Materials, Inc.

Inventor： Abdul Aziz KHAJA ,  Ren-Guan DUAN ,  Amit Kumar BANSAL ,  Jianhua ZHOU ,  Juan Carlos ROCHA-ALVAREZ

IPC: C23C16/44 ,  H01L21/687 ,  H01L21/67 ,  C23C16/458

CPC classification number: C23C16/4405 ,  C23C16/4581 ,  F02B75/045 ,  F02D15/02 ,  F16C3/28 ,  F16C7/06 ,  F16C2360/22 ,  F16D41/16 ,  H01L21/67103 ,  H01L21/68757 ,  H01L21/68792

Abstract: Implementations described herein protect a substrate support from corrosive cleaning gases used at high temperatures. In one embodiment, a substrate support has a shaft having an outer wall. The substrate support has a heater. The heater has a body having a top surface, a side surface and a bottom surface extending from the outer wall of the shaft. The top surface is configured to support a substrate during plasma processing of the substrate. A covering is provided for at least two of the top surface, side surface and bottom surface. The covering is selected to resist corrosion of the body at temperatures in excess of about 400 degrees Celsius. A sleeve circumscribing the shaft, the sleeve and the outer wall of the shaft forming a space therebetween, the space adapted to flow a purge gas therethrough in a direction toward the body.

公开(公告)号：US20190122872A1

公开(公告)日：2019-04-25

申请号：US16230766

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit GHOSH ,  Sanjeev BALUJA ,  Mayur G. KULKARNI ,  Shailendra SRIVASTAVA ,  Tejas ULAVI ,  Yusheng ALVIN ZHOU ,  Amit Kumar BANSAL ,  Priyanka DASH ,  Zhijun JIANG ,  Ganesh BALASUBRAMANIAN ,  Qiang MA ,  Kaushik ALAYAVALLI ,  Yuxing ZHANG ,  Daniel HWUNG ,  Shawyon JAFARI

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/455

Abstract: Systems and methods for depositing a film in a PECVD chamber while reducing residue buildup in the chamber. In some embodiments disclosed herein, a processing chamber includes a chamber body, a substrate support, a showerhead, and one or more heaters configured to heat the showerhead. In some embodiments, the processing chamber includes a controller.

公开(公告)号：US20180258535A1

公开(公告)日：2018-09-13

申请号：US15976468

申请日：2018-05-10

Applicant: Applied Materials, Inc.

Inventor： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Michael Wenyoung TSIANG ,  Masaki OGATA ,  Zhijun JIANG ,  Juan Carlos ROCHA-ALVAREZ ,  Thomas NOWAK ,  Jianhua ZHOU ,  Ramprakash SANKARAKRISHNAN ,  Amit Kumar BANSAL ,  Jeongmin LEE ,  Todd EGAN ,  Edward BUDIARTO ,  Dmitriy PANASYUK ,  Terrance Y. LEE ,  Jian J. CHEN ,  Mohamad A. AYOUB ,  Heung Lak PARK ,  Patrick REILLY ,  Shahid SHAIKH ,  Bok Hoen KIM ,  Sergey STARIK ,  Ganesh BALASUBRAMANIAN

IPC: C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  C23C16/509 ,  C23C16/455 ,  C23C16/505 ,  C23C16/50 ,  C23C16/46 ,  C23C16/458 ,  G01N21/65 ,  G01N21/55 ,  H01L21/67 ,  H01L21/00

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US20180082866A1

公开(公告)日：2018-03-22

申请号：US15703666

申请日：2017-09-13

Applicant: Applied Materials, Inc.

Inventor： Kaushik ALAYAVALLI ,  Ajit BALAKRISHNA ,  Sanjeev BALUJA ,  Amit Kumar BANSAL ,  Matthew James BUSCHE ,  Juan Carlos ROCHA-ALVAREZ ,  Swaminathan T. SRINIVASAN ,  Tejas ULAVI ,  Jianhua ZHOU

IPC: H01L21/67

CPC classification number: H01L21/67103 ,  H01L21/67109 ,  H01L21/67161 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/68792

Abstract: Implementations of the disclosure generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one implementation, a pedestal assembly is disclosed and includes a substrate support comprising a dielectric material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to a support member of the substrate support at a first end of the shaft, and a thermally conductive material disposed at an interface between the support member and the first end of the shaft.