公开(公告)号：US20120042946A1

公开(公告)日：2012-02-23

申请号：US13216977

申请日：2011-08-24

Applicant: Kumi Masunaga ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa ,  Koji Asakawa ,  Hideyuki Nishizawa

Inventor： Kumi Masunaga ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa ,  Koji Asakawa ,  Hideyuki Nishizawa

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/0236 ,  H01L31/022433 ,  Y02E10/50

Abstract: The embodiment provides a solar cell and a manufacturing process thereof. The solar cell is equipped with an electrode on the light incident surface side; and the electrode has both low resistivity and high transparency, can efficiently utilize solar light for excitation of carriers, and can be made of inexpensive materials. The solar cell comprises a photoelectric conversion layer, a first electrode layer arranged on the light incident surface side, and a second electrode layer arranged opposed to the first electrode layer. The first electrode layer has a thickness in the range of 10 to 200 nm, and has plural penetrating openings. Each of the individual openings occupies an area in the range of 80 nm2 to 0.8 μm2, and the aperture ratio thereof is in the range 10 to 66%. The first electrode layer in the cell can be produced by etching procedure using an etching mask obtained by use of a single particle layer of fine particles, by use of a dot pattern formed by self-assembly of a block copolymer, or by use of a stamper.

Abstract translation: 本实施例提供一种太阳能电池及其制造方法。 太阳能电池在光入射面侧配备有电极; 并且电极具有低电阻率和高透明度，可以有效地利用太阳光用于载流子的激发，并且可以由廉价的材料制成。 太阳能电池包括光电转换层，布置在光入射表面侧的第一电极层和与第一电极层相对布置的第二电极层。 第一电极层的厚度为10〜200nm，具有多个贯通孔。 每个单独的开口占据在80nm 2至0.8μm2范围内的面积，并且其开口率在10至66％的范围内。 电池中的第一电极层可以通过使用通过使用单颗粒细小颗粒层获得的蚀刻掩模，通过使用通过嵌段共聚物的自组装形成的点图案或通过使用 压模。

公开(公告)号：US08101964B2

公开(公告)日：2012-01-24

申请号：US12363198

申请日：2009-01-30

Applicant: Ryota Kitagawa ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

Inventor： Ryota Kitagawa ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

IPC: H01L30/00

CPC classification number: H01L33/38 ,  H01L2933/0091

Abstract: The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.

Abstract translation: 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续连接而不断裂，并且整个区域的95％或更多的金属部分线性地继续而不断开，直线距离不大于 从有源层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。

公开(公告)号：US20100236619A1

公开(公告)日：2010-09-23

申请号：US12700063

申请日：2010-02-04

Applicant: Eishi TSUTSUMI ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Hideyuki Nishizawa ,  Koji Asakawa

Inventor： Eishi TSUTSUMI ,  Kumi Masunaga ,  Ryota Kitagawa ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Hideyuki Nishizawa ,  Koji Asakawa

IPC: H01L31/00 ,  H01L31/18

CPC classification number: H01L31/022433 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

Abstract: The present invention provides a light transmission type solar cell excellent in both power generation efficiency and light transparency, and also provides a method for producing that solar cell. The solar cell of the present invention comprises a photoelectric conversion layer, a light-incident side electrode layer, and a counter electrode layer. The incident side electrode layer is provided with plural openings bored through the layer, and has a thickness of 10 nm to 200 nm. Each of the openings occupies an area of 80 nm2 to 0.8 μm2, and the opening ratio is in the range of 10% to 66%. The transmittance of the whole cell is 5% or more at 700 nm wavelength. The incident side electrode layer can be formed by etching fabrication with a stamper. In the etching fabrication, a mono-particle layer of fine particles or a dot pattern formed by self-assembled block copolymer can be used as a mask.

Abstract translation: 本发明提供一种发光效率和光透射性优异的透光型太阳能电池，并且还提供一种太阳能电池的制造方法。 本发明的太阳能电池包括光电转换层，光入射侧电极层和对电极层。 入射侧电极层设置有穿过层的多个开口，并且具有10nm至200nm的厚度。 每个开口占据80nm 2至0.8μm2的面积，并且开口率在10％至66％的范围内。 在700nm波长下，全细胞的透射率为5％以上。 入射侧电极层可以通过用压模进行蚀刻制造来形成。 在蚀刻制造中，可以使用通过自组装嵌段共聚物形成的细颗粒的单粒子层或点图案作为掩模。

公开(公告)号：US20090242925A1

公开(公告)日：2009-10-01

申请号：US12363198

申请日：2009-01-30

Applicant: Ryota KITAGAWA ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

Inventor： Ryota KITAGAWA ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

IPC: H01L33/00

CPC classification number: H01L33/38 ,  H01L2933/0091

Abstract: The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.

Abstract translation: 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续地连接而不断裂，并且整个区域的95％以上的金属部分直线地继续而不断开，直线距离不大于 从活性层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。

公开(公告)号：US20080024053A1

公开(公告)日：2008-01-31

申请号：US11687854

申请日：2007-03-19

Applicant: Akira Fujimoto ,  Tsutomu Nakanishi

Inventor： Akira Fujimoto ,  Tsutomu Nakanishi

IPC: H01J1/62 ,  G02F1/00 ,  H01B13/00

CPC classification number: G02B6/1225 ,  B82Y20/00 ,  H01L51/5271 ,  H01L51/5275

Abstract: It is made possible to provide a three-dimensional structure having a band-gap function as a three-dimensional photonic crystal. A three-dimensional structure includes: a plurality of basic elements provided at regular intervals on a substrate, each of the basic elements including a stack structure. The stack structure includes first members made of a dielectric material and second members made of the same dielectric material as the first members. The first and second members are alternately stacked, the second members each having a smaller diameter than each of the first members.

Abstract translation: 可以提供具有带隙功能的三维结构作为三维光子晶体。 三维结构包括：在基板上以规则间隔设置的多个基本元件，每个基本元件包括堆叠结构。 堆叠结构包括由介电材料制成的第一构件和由与第一构件相同的电介质材料制成的第二构件。 第一和第二构件交替堆叠，第二构件各自具有比每个第一构件更小的直径。

公开(公告)号：US07164179B2

公开(公告)日：2007-01-16

申请号：US10495926

申请日：2003-08-06

Applicant: Tsutomu Nakanishi ,  Hirofumi Tajika ,  Michihiko Hayashi ,  Satoshi Ouchi

Inventor： Tsutomu Nakanishi ,  Hirofumi Tajika ,  Michihiko Hayashi ,  Satoshi Ouchi

IPC: H01L27/14

CPC classification number: G01C19/5607

Abstract: An angular velocity sensor includes a tuning-fork-shaped substrate (1), drivers (110) that are provided on the arms forming a tuning fork and vibrate the arms; monitors (150) for detecting vibrations generated by the drivers (110); and detectors (120) for detecting displacement of vibrations made in application of an angular velocity. The drivers (110), the monitors (150), and the detectors (120) are made of a lower electrode layer, a piezoelectric thin film, and an upper electrode layer formed on the arms. The outer peripheral edge of the piezoelectric thin film is shaped like a step having at least one flat portion. The flat portion along the outer peripheral edge has no upper electrode layer formed thereon. This structure prevents short circuits between the lower electrode layer and the upper electrode layer.

Abstract translation: 角速度传感器包括音叉形基板（1），驱动器（110），其设置在形成音叉的臂上并使臂振动; 监视器（150），用于检测由驾驶员（110）产生的振动; 以及用于检测施加角速度的振动的位移的检测器（120）。 驱动器（110），监视器（150）和检测器（120）由形成在臂上的下电极层，压电薄膜和上电极层制成。 压电薄膜的外周缘成形为具有至少一个平坦部分的台阶。 沿着外周边缘的平坦部分没有形成上电极层。 这种结构防止了下电极层和上电极层之间的短路。

公开(公告)号：US06403959B1

公开(公告)日：2002-06-11

申请号：US09402969

申请日：1999-11-22

Applicant: Kazuhiko Fujikawa ,  Takeshi Masutani ,  Tsutomu Nakanishi ,  Shinji Umeda ,  Kazuki Komaki ,  Katsumasa Miki ,  Koji Nomura

Inventor： Kazuhiko Fujikawa ,  Takeshi Masutani ,  Tsutomu Nakanishi ,  Shinji Umeda ,  Kazuki Komaki ,  Katsumasa Miki ,  Koji Nomura

IPC: G01J102

CPC classification number: G01J5/04 ,  G01J5/0022 ,  G01J5/0025 ,  G01J5/0285 ,  G01J5/045 ,  G01J5/046 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/0846 ,  G01J5/0853 ,  G01J5/0875 ,  G01J5/089 ,  G01J5/10 ,  G01J5/34

Abstract: The present invention relates to an infrared detector element to detect infrared rays by means of a pyroelectric material, and an infrared sensor unit and an infrared detecting device using the infrared detector element and has an object of realizing an omnidirectional infrared detector element that can gain an output against an object to be detected moving in whatever directions. In order to accomplish this object, the present invention proposes a setup comprising a pair of first electrodes (12, 13), which have a function of absorbing infrared rays, are close to trapezoidal in shape, respectively, and are disposed on one of the surfaces of a pyroelectric material (11) with electrical connections made in such a way that the first electrodes are opposite to each other in polarity, and a pair of second electrodes (14, 15) disposed on the other surface of the pyroelectric material (11) and electrically connected with each other, in which the lower side of the close to trapezoidal shape of the first electrodes (12, 13) of one hand is aligned in the same direction as the lower side of the close to trapezoidal shape of the second electrodes (14, 15) of the other hand, thereby producing an effect of gaining an output against an object to be detected making a movement from whatever directions.

Abstract translation: 本发明涉及一种利用热电材料检测红外线的红外线检测元件，以及使用该红外线检测元件的红外线传感器单元和红外线检测装置，其目的在于，实现能够获得红外线检测元件的全向红外线检测元件 针对被检测物体的输出在任何方向上移动。 为了实现该目的，本发明提出一种包括具有吸收红外线功能的一对第一电极（12,13）分别接近梯形的设置，并且设置在其中一个 具有以使得第一电极极性彼此相对的方式制造的电连接的热电材料（11）的表面和设置在热电材料（11）的另一表面上的一对第二电极（14,15） ）并且彼此电连接，其中一只手的第一电极（12,13）接近梯形形状的下侧在与第二电极（12,13）的接近梯形形状的下侧相同的方向上对准 另一方面的电极（14,15），从而产生相对于从任何方向移动的待检测物体的输出的效果。

公开(公告)号：US5877510A

公开(公告)日：1999-03-02

申请号：US807216

申请日：1997-02-28

Applicant: Toshio Baba ,  Masashi Mizuta ,  Tsunehiko Omori ,  Yoshimasa Kurihara ,  Tsutomu Nakanishi

Inventor： Toshio Baba ,  Masashi Mizuta ,  Tsunehiko Omori ,  Yoshimasa Kurihara ,  Tsutomu Nakanishi

IPC: H01J1/34 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072

CPC classification number: H01J1/34 ,  H01J2203/0296

Abstract: There are provided on a substrate a block layer having an electron affinity smaller than that of the substrate, a p-type strained superlattice structure having no lattice relaxation and operating as a generation region of spin polarized electrons and a surface layer for accommodating a bending portion of the energy band. The superlattice structure is formed of a multilayer in which a strained well layer and a barrier layer are alternately laminated plural times. The strained well layer has a lattice constant greater than that of the substrate and a thickness equal to or less than a wavelength of electron wave, and the barrier layer has a conduction band lower in energy than that of the strained well layer and a thickness such that an electron in the conduction band can transmit based on tunnel effect. A difference in energy between the band for heavy holes and the band for light holes is further widened in the valence band of the superlattice structure due to compressive stress in the strained well layer.

Abstract translation: 在基板上设置具有小于基板的电子亲和力的阻挡层，不具有晶格弛豫并作为自旋极化电子的产生区域工作的p型应变超晶格结构和用于容纳弯曲部分的表面层 的能量带。 超晶格结构由多层构成，其中应变阱层和阻挡层交替层叠多次。 应变阱层的晶格常数大于衬底的晶格常数，并且厚度等于或小于电子波的波长，并且阻挡层的能带的能带低于应变阱层的导带， 导带中的电子可以基于隧道效应传输。 由于应变阱层中的压应力，超晶格结构的价带中的重孔带和光孔带之间的能量差异进一步扩大。

公开(公告)号：US5500552A

公开(公告)日：1996-03-19

申请号：US282046

申请日：1994-07-22

Applicant: Takeshi Ikeda ,  Tsutomu Nakanishi ,  Akira Okamoto

Inventor： Takeshi Ikeda ,  Tsutomu Nakanishi ,  Akira Okamoto

IPC: H01L27/08 ,  H03B5/12 ,  H03B5/18 ,  H03H7/01 ,  H01L29/00

CPC classification number: H03H7/0115 ,  H01L27/08 ,  H03B5/1841 ,  H03H7/0123 ,  H01L2924/0002 ,  H03H2001/0064 ,  H03H2001/0071 ,  H03H2001/0078

Abstract: An LC element, semiconductor device and a manufacturing method thereof whereby a channel 22 is formed by applying a voltage to a gate electrode 10 having a predetermined shape formed on a p-Si substrate 30 via an insulation layer 26, whereby a connection is formed between a first diffusion region 12 and a second diffusion region 14 formed at separated positions near the surface of the p-Si substrate 30; both the channel 22 and gate electrode 10 function as inductors, and between these a distributed constant type capacitor is formed, and possessing excellent attenuation characteristics over a wide band. This LC element and semiconductor device can be easily manufactured by using MOS manufacturing technology; in the case of manufacturing as a portion of a semiconductor substrate, component assembly work in subsequent processing can be omitted. Also these can be formed as a portion of an IC or LSI device.

Abstract translation: 一种LC元件，半导体器件及其制造方法，通过经由绝缘层26向在p-Si衬底30上形成的具有预定形状的栅电极10施加电压而形成沟道22，由此在 形成在p-Si衬底30的表面附近的分离位置处的第一扩散区域12和第二扩散区域14; 通道22和栅极电极10都用作电感器，并且在这些之间形成分布常数型电容器，并且在宽带上具有优异的衰减特性。 该LC元件和半导体器件可以通过使用MOS制造技术容易地制造; 在制造半导体基板的一部分的情况下，可以省略后续处理中的部件组装工作。 而且这些也可以形成为IC或LSI器件的一部分。

公开(公告)号：US08840258B2

公开(公告)日：2014-09-23

申请号：US13723374

申请日：2012-12-21

Applicant: Tsutomu Nakanishi ,  Akira Fujimoto ,  Koji Asakawa ,  Takeshi Okino ,  Shinobu Sugimura

Inventor： Tsutomu Nakanishi ,  Akira Fujimoto ,  Koji Asakawa ,  Takeshi Okino ,  Shinobu Sugimura

IPC: G02B27/00 ,  C03C15/00 ,  C03C17/00 ,  G02B1/11

CPC classification number: G02B1/118 ,  B81C1/0046 ,  C03C15/00 ,  C03C17/007 ,  C03C17/28 ,  C03C2217/42 ,  C03C2217/77 ,  C03C2218/34 ,  C03C2218/355 ,  Y10T428/24421

Abstract: The present invention provides such a formation method that an antireflection structure having excellent antireflection functions can be formed in a large area and at small cost. Further, the present invention also provides an antireflection structure formed by that method. In the formation method, a base layer and particles placed thereon are subjected to an etching process. The particles on the base layer serve as an etching mask in the process, and hence they are more durable against etching than the base layer. The etching rate ratio of the base layer to the particles is more than 1 but not more than 5. The etching process is stopped before the particles disappear. It is also possible to produce an antireflection structure by nanoimprinting method employing a stamper. The stamper is formed by use of a master plate produced according to the above formation method.

Abstract translation: 本发明提供这样一种形成方法，即可以大面积且成本低的方式形成具有优异的抗反射功能的抗反射结构。 此外，本发明还提供了通过该方法形成的抗反射结构。 在形成方法中，对基底层和放置在其上的颗粒进行蚀刻处理。 基层上的颗粒在该过程中用作蚀刻掩模，因此它们比基层更耐腐蚀。 基层与颗粒的蚀刻速率比大于1但不大于5.蚀刻过程在颗粒消失之前停止。 也可以通过使用压模的纳米压印方法制造抗反射结构。 通过使用根据上述形成方法制造的母版形成压模。