公开(公告)号：US20050152430A1

公开(公告)日：2005-07-14

申请号：US11023419

申请日：2004-12-29

Applicant: Toshikazu Onishi ,  Kazutoshi Onozawa ,  Shinji Yoshida ,  Daisuke Ueda

Inventor： Toshikazu Onishi ,  Kazutoshi Onozawa ,  Shinji Yoshida ,  Daisuke Ueda

IPC: H01S3/105 ,  G01N21/84 ,  H01S3/08 ,  H01S5/068 ,  H01S5/10 ,  H01S5/183

CPC classification number: H01S5/18394 ,  H01S5/1046 ,  H01S5/18319 ,  H01S5/1835

Abstract: According to the present invention, a first p-side electrode 7A made of metal which is provided with regularly arranged holes 10 having a diameter smaller than a laser oscillation wavelength and a second p-side electrode 7B arranged around the periphery of the first p-type electrode 7A are used as a p-side mirror of a surface-emitting laser. Light in a resonator formed of a p-side electrode 7 and an n-type mirror 2 is first converted to a surface plasmon and then reconverted to the light by the p-side electrode 7A, and then emitted outside the resonator. This improves the light transmittance, thereby permitting use of metal which is considered to have inherently low light transmittance as a material for the p-side electrode 7. If the p-side electrode 7 is made of metal, operating voltage is reduced and heat dissipation improves, without causing a spike in a valence band, which occurs when a semiconductor layer is used. Further, due to the nonlinear effect of the mirror, optical feedback to the inside of the resonator is controlled, whereby a laser device with excellent noise characteristic is obtained.

Abstract translation: 根据本发明，由金属制成的第一p侧电极7A，其具有规则排列的直径小于激光振荡波长的孔10，第二p侧电极7B布置在第一 p型电极7A用作表面发射激光器的p侧反射镜。 首先将由p侧电极7和n型反射镜2形成的谐振器中的光转换为表面等离子体，然后通过p侧电极7A再次转换为光，然后发射到谐振器外部。 这提高了透光率，从而允许使用被认为具有固有的低透光率的金属作为p侧电极7的材料。 如果p侧电极7由金属制成，则工作电压降低，散热改善，而不会在使用半导体层时发生价带的尖峰。 此外，由于反射镜的非线性效应，对谐振器内部的光反馈被控制，从而获得具有优异噪声特性的激光器件。

公开(公告)号：US06671301B1

公开(公告)日：2003-12-30

申请号：US09565937

申请日：2000-05-05

Applicant: Toshikazu Onishi ,  Hideto Adachi ,  Masaya Mannou ,  Akira Takamori

Inventor： Toshikazu Onishi ,  Hideto Adachi ,  Masaya Mannou ,  Akira Takamori

IPC: H01S500

CPC classification number: B82Y20/00 ,  H01S5/162 ,  H01S5/2231 ,  H01S5/3425 ,  H01S5/34326

Abstract: A semiconductor laser device including: a semiconductor substrate of a first conductivity type; a cladding layer of the first conductivity type provided on the semiconductor substrate; an active layer provided on the cladding layer of the first conductivity type, the active layer having a super-lattice structure including a disordered region in a vicinity of at least one cavity end face; a first cladding layer of a second conductivity type provided on the active layer; an etching stop layer of the second conductivity type provided on the first cladding layer; and a second cladding layer of the second conductivity type provided on the etching stop layer, the second cladding layer forming a ridge structure, the ridge structure extending along a cavity length direction and having a predetermined width. A concentration of an impurity in the etching stop layer in the vicinity of the at least one cavity end face is greater than a concentration of the impurity in the interior of a cavity and equal to or smaller than about 2×1018 cm−3.

Abstract translation: 一种半导体激光器件，包括：第一导电类型的半导体衬底; 设置在半导体衬底上的第一导电类型的覆层; 设置在所述第一导电类型的包覆层上的有源层，所述有源层具有在至少一个腔端面附近包括无序区域的超晶格结构; 设置在有源层上的第二导电类型的第一包层; 设置在第一包层上的第二导电类型的蚀刻停止层; 以及设置在所述蚀刻停止层上的所述第二导电类型的第二包层，所述第二包层形成脊结构，所述脊结构沿着空腔长度方向延伸并具有预定宽度。 在至少一个空腔端面附近的蚀刻停止层中的杂质浓度大于空腔内的杂质的浓度，并且等于或小于约2×10 18 cm -3 >。

公开(公告)号：US06379211B2

公开(公告)日：2002-04-30

申请号：US09848360

申请日：2001-05-04

Applicant: Toshikazu Onishi ,  Yoshikazu Banno ,  Michiyo Nishimura ,  Toshihiko Takeda ,  Keisuke Yamamoto ,  Tomoko Maruyama

Inventor： Toshikazu Onishi ,  Yoshikazu Banno ,  Michiyo Nishimura ,  Toshihiko Takeda ,  Keisuke Yamamoto ,  Tomoko Maruyama

IPC: H01J902

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J9/027 ,  H01J31/127 ,  H01J2201/3165

Abstract: A method for manufacturing an electron emission element comprising, between its electrodes, a conductive film having an electron emission section. The method comprising the steps of forming a gap in the conductive film located between the electrodes, and applying a voltage between the electrodes in an atmosphere that has an aromatic compound with a polarity or a polar group and in which the partial pressure ratio of water to the aromatic compound is 100 or less.

公开(公告)号：US08043994B2

公开(公告)日：2011-10-25

申请号：US12801994

申请日：2010-07-07

Applicant: Toshikazu Onishi ,  Toru Nakai ,  Kazuyuki Tachibana ,  Kyoko Uchida ,  Yoshimasa Tanaka ,  Yoshihiro Shimizu ,  Hideaki Shinohara ,  Masato Kawamura ,  Chikara Tsukada

Inventor： Toshikazu Onishi ,  Toru Nakai ,  Kazuyuki Tachibana ,  Kyoko Uchida ,  Yoshimasa Tanaka ,  Yoshihiro Shimizu ,  Hideaki Shinohara ,  Masato Kawamura ,  Chikara Tsukada

IPC: B41M5/035 ,  B41M5/50

CPC classification number: B41M5/44 ,  B41M2205/02 ,  B41M2205/06 ,  B41M2205/12 ,  B41M2205/32 ,  B41M2205/36 ,  B41M2205/38 ,  Y10T428/249953

Abstract: The present invention provides a thermal transfer receiving sheet obtained by sequentially forming a hollow particle-containing intermediate layer and an image receiving layer on one surface of a sheet-like support mainly comprising cellulose pulp, wherein the moisture content of the entire thermal transfer receiving sheet is from 2 to 8 mass % and the moisture permeability of the entire receiving sheet is 400 g/m2·day or less; and a production method thereof. The present invention further provides a thermal transfer receiving sheet obtained by sequentially forming a hollow particle-containing intermediate layer and an image receiving layer on one surface of a sheet-like support mainly comprising cellulose pulp and providing a backside layer on another surface of the support, wherein the backside layer mainly comprises an acryl-based resin having a glass transition point (Tg) of 45° C. or less and contains a resin filler having an average particle diameter of 5 to 22 μm and the Bekk smoothness according to JIS P 8119 on the backside layer surface is 100 seconds or less.

Abstract translation: 本发明提供一种热转印接收片材，其通过在主要包含纤维素纸浆的片状载体的一个表面上依次形成含中空颗粒的中间层和图像接收层而获得，其中整个热转印接收片材的水分含量 为2〜8质量％，整个接收片的透湿度为400g / m 2·天以下; 及其制造方法。 本发明还提供一种热转印接收片，其通过在主要包含纤维素纸浆的片状载体的一个表面上依次形成含中空颗粒的中间层和图像接收层而获得，并且在载体的另一个表面上提供背面层 其特征在于，所述背面层主要包含玻璃化转变点（Tg）为45℃以下的丙烯酸类树脂，并且含有平均粒径为5〜22μm的树脂填料和根据JIS P的Bekk平滑度 背面层表面的8119为100秒以下。

公开(公告)号：US07538357B2

公开(公告)日：2009-05-26

申请号：US11195639

申请日：2005-08-03

Applicant: Toshikazu Onishi ,  Tatsuya Tanigawa ,  Tetsuzo Ueda

Inventor： Toshikazu Onishi ,  Tatsuya Tanigawa ,  Tetsuzo Ueda

IPC: H01L29/207

CPC classification number: H01S5/18394 ,  H01L33/105 ,  H01L33/465 ,  H01L33/54 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/18319 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/18386

Abstract: A semiconductor light emitting device includes: a cavity including a mesa formed over a substrate, the mesa having an active layer and being isolated by a recess formed around the mesa; and a resin layer with which the recess is filled. On the upper surface of the cavity, which is a light output surface through which light emitted from the active layer is output, a metal film having an opening whose diameter is smaller than the emission wavelength of the emitted light is formed.

Abstract translation: 一种半导体发光器件包括：包括形成在衬底上的台面的空腔，所述台面具有有源层，并且通过围绕所述台面形成的凹部隔离; 以及填充有凹部的树脂层。 在作为输出从有源层发射的光的光输出面的空腔的上表面形成具有直径小于发射光的发射波长的开口的金属膜。

公开(公告)号：US07402843B2

公开(公告)日：2008-07-22

申请号：US11000207

申请日：2004-12-01

Applicant: Toshikazu Onishi

Inventor： Toshikazu Onishi

IPC: H01L31/0328 ,  H01L31/0336

CPC classification number: H01L33/30 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02502 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L29/201 ,  H01L29/205

Abstract: An AlGaInP layer is formed on a substrate made of GaAs, and an AlGaAs layer is formed on the AlGaInP layer via a buffer layer therebetween. The buffer layer has a thickness of about 1.1 nm and is made of AlGaInP whose Ga content is smaller than that of the AlGaInP layer. The buffer layer may alternatively be made of AlGaAs whose Al content is smaller than that of the AlGaAs layer.

Abstract translation: 在由GaAs制成的衬底上形成AlGaInP层，并且通过其间的缓冲层在AlGaInP层上形成AlGaAs层。 缓冲层的厚度约为1.1nm，由AlGaInP制成，其Ga含量低于AlGaInP层。 可替代地，缓冲层可由Al AlAs制成，其Al含量小于AlGaAs层的AlGaAs。

公开(公告)号：US20080063817A1

公开(公告)日：2008-03-13

申请号：US10566202

申请日：2004-08-04

Applicant: Yoshimasa Tanaka ,  Masato Kawamura ,  Chikara Tsukada ,  Kyoko Uchida ,  Toshikazu Onishi ,  Toru Nakai ,  Kazuyuki Tachibana ,  Hideaki Shinohara

Inventor： Yoshimasa Tanaka ,  Masato Kawamura ,  Chikara Tsukada ,  Kyoko Uchida ,  Toshikazu Onishi ,  Toru Nakai ,  Kazuyuki Tachibana ,  Hideaki Shinohara

IPC: B41M5/40 ,  B05D1/36

CPC classification number: B41M5/42 ,  B41M5/44 ,  B41M2205/32 ,  B41M2205/36 ,  B41M2205/38

Abstract: A thermal transfer receiving sheet comprising a sheet-like support having sequentially formed on at least one surface thereof a hollow particle-containing intermediate layer and an image receiving layer, wherein the hollow particles have an average particle diameter of 0.2 to 35 μm and a hollow percentage by volume of 30 to 97% and the printing smoothness (Rp value) on the surface of the thermal transfer receiving sheet, as measured by using a Microtopograph under an applied pressure of 0.1 MPa 10 m-seconds after the initiation of pressure application, is 1.5 μm or less. A production method of the thermal transfer receiving sheet is also provided.

Abstract translation: 一种热转印接收片材，其包含在至少一个表面上依次形成有中空颗粒的中间层和图像接收层的片状载体，其中所述中空颗粒的平均粒径为0.2〜35μm， 在热压接受片的表面上的印刷平滑度（Rp值）在压力施加开始后的0.1MPa的施加压力下使用微图形仪测量， 为1.5mum以下。 还提供了热转印接收片材的制造方法。

公开(公告)号：US20070058982A1

公开(公告)日：2007-03-15

申请号：US11519973

申请日：2006-09-13

Applicant: Toshikazu Onishi ,  Tetsuzo Ueda ,  Daisuke Ueda

Inventor： Toshikazu Onishi ,  Tetsuzo Ueda ,  Daisuke Ueda

IPC: H04B10/00

CPC classification number: H01S5/18355 ,  B82Y20/00 ,  H01L31/035281 ,  H01L31/105 ,  H01S5/02284 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18319 ,  H01S5/18344 ,  H01S5/18358 ,  H01S5/18386 ,  H01S5/3432 ,  H01S5/423 ,  Y02E10/50

Abstract: A surface emitting laser includes a plurality of light-emitting portions for emitting laser light beams in different linearly polarized light directions. The light-emitting portions are formed on the substrate and located close to each other. The light-emitting portions include metal opening arrays through which light beams in different linearly polarized light directions respectively pass.

Abstract translation: 表面发射激光器包括用于在不同的线偏振光方向上发射激光束的多个发光部分。 发光部分形成在基板上并且彼此靠近。 发光部分包括分别通过不同线偏振光方向的光束的金属开口阵列。

公开(公告)号：US20060128046A1

公开(公告)日：2006-06-15

申请号：US11346373

申请日：2006-02-03

Applicant: Toshikazu Onishi

Inventor： Toshikazu Onishi

IPC: H01L21/00

CPC classification number: B82Y20/00 ,  H01S5/164 ,  H01S5/2231 ,  H01S5/3072 ,  H01S5/34326 ,  H01S5/3436

Abstract: A semiconductor laser device according to the present invention has a semiconductor substrate, an active layer formed on the semiconductor substrate and made of a compound semiconductor containing phosphorus, a guide layer formed on the active layer and made of a compound semiconductor a dopant diffusion preventing layer formed on the guide layer and made of a semiconductor compound containing arsenic, and a clad layer formed on the dopant diffusion preventing layer and made of a compound semiconductor containing a dopant.

Abstract translation: 根据本发明的半导体激光器件具有半导体衬底，形成在半导体衬底上并由含磷的化合物半导体构成的有源层，形成在有源层上并由化合物半导体构成的引导层，掺杂剂扩散防止层 形成在引导层上并由含砷的半导体化合物制成，以及形成在掺杂剂扩散防止层上并由含有掺杂剂的化合物半导体构成的覆层。

公开(公告)号：US07037743B2

公开(公告)日：2006-05-02

申请号：US10699986

申请日：2003-11-03

Applicant: Toshikazu Onishi ,  Hideto Adachi ,  Masaya Mannou ,  Akira Takamori

Inventor： Toshikazu Onishi ,  Hideto Adachi ,  Masaya Mannou ,  Akira Takamori

IPC: H01L21/00 ,  H01S5/00

CPC classification number: B82Y20/00 ,  H01S5/162 ,  H01S5/2231 ,  H01S5/3425 ,  H01S5/34326

Abstract: A semiconductor laser device is provided that includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer provided on the semiconductor substrate and an active layer provided on the cladding layer. The active layer has a super-lattice structure including a disordered region in a vicinity of a cavity end face. A first cladding layer of a second conductivity type is provided on the active layer, an etching stop layer of the second conductivity type is provided on the first cladding layer and a second cladding layer of the second conductivity type is provided on the etching stop layer. The second cladding layer forms a ridge structure that extends along a cavity length direction. An impurity concentration in the etching stop layer in the vicinity of the cavity end face is equal to or smaller than about 2×1018 cm−3.

Abstract translation: 提供一种半导体激光器件，其包括第一导电类型半导体衬底，设置在半导体衬底上的第一导电类型覆层和设置在包覆层上的有源层。 有源层具有包括空腔端面附近的无序区域的超晶格结构。 在有源层上设置有第二导电类型的第一包层，在第一包层上设置第二导电类型的蚀刻阻挡层，在蚀刻停止层上设置第二导电类型的第二包覆层。 第二包层形成沿着空腔长度方向延伸的脊结构。 在腔体端面附近的蚀刻停止层中的杂质浓度等于或小于约2×10 18 cm -3 -3。