公开(公告)号：US08304812B2

公开(公告)日：2012-11-06

申请号：US13051455

申请日：2011-03-18

Applicant: Toshikazu Onishi ,  Tatsuya Tanigawa ,  Shinichi Takigawa ,  Tsuyoshi Tanaka

Inventor： Toshikazu Onishi ,  Tatsuya Tanigawa ,  Shinichi Takigawa ,  Tsuyoshi Tanaka

IPC: H01L29/778

CPC classification number: H01L29/7787 ,  H01L29/0692 ,  H01L29/41725 ,  H01L29/42316

Abstract: A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.

Abstract translation: 太赫兹波辐射元件包括：形成在基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层之上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在第二氮化物半导体层上的源极，栅极和漏电极。 源电极由周期性地排列的多个源电极指形成，漏电极由周期性排列的多个漏电极指形成。

公开(公告)号：US20100279034A1

公开(公告)日：2010-11-04

申请号：US12801994

申请日：2010-07-07

Applicant: Toshikazu Onishi ,  Toru Nakai ,  Kazuyuki Tachibana ,  Kyoko Uchida ,  Yoshimasa Tanaka ,  Yoshihiro Shimizu ,  Hideaki Shinohara ,  Masato Kawamura ,  Chikara Tsukada

Inventor： Toshikazu Onishi ,  Toru Nakai ,  Kazuyuki Tachibana ,  Kyoko Uchida ,  Yoshimasa Tanaka ,  Yoshihiro Shimizu ,  Hideaki Shinohara ,  Masato Kawamura ,  Chikara Tsukada

IPC: B41M5/41

CPC classification number: B41M5/44 ,  B41M2205/02 ,  B41M2205/06 ,  B41M2205/12 ,  B41M2205/32 ,  B41M2205/36 ,  B41M2205/38 ,  Y10T428/249953

Abstract: The present invention provides a thermal transfer receiving sheet obtained by sequentially forming a hollow particle-containing intermediate layer and an image receiving layer on one surface of a sheet-like support mainly comprising cellulose pulp, wherein the moisture content of the entire thermal transfer receiving sheet is from 2 to 8 mass % and the moisture permeability of the entire receiving sheet is 400 g/m2·day or less; and a production method thereof. The present invention further provides a thermal transfer receiving sheet obtained by sequentially forming a hollow particle-containing intermediate layer and an image receiving layer on one surface of a sheet-like support mainly comprising cellulose pulp and providing a backside layer on another surface of the support, wherein the backside layer mainly comprises an acryl-based resin having a glass transition point (Tg) of 45° C. or less and contains a resin filler having an average particle diameter of 5 to 22 μm and the Bekk smoothness according to JIS P 8119 on the backside layer surface is 100 seconds or less.

公开(公告)号：US07638462B2

公开(公告)日：2009-12-29

申请号：US11596817

申请日：2005-05-17

Applicant: Masato Kawamura ,  Yoshimasa Tanaka ,  Toshikazu Onishi ,  Kyoko Uchida ,  Chikara Tsukada ,  Toru Nakai ,  Kazuyuki Tachibana ,  Yoshihiro Shimizu ,  Yoshio Mizuhara ,  Hideaki Shinohara ,  Hisayoshi Mito

Inventor： Masato Kawamura ,  Yoshimasa Tanaka ,  Toshikazu Onishi ,  Kyoko Uchida ,  Chikara Tsukada ,  Toru Nakai ,  Kazuyuki Tachibana ,  Yoshihiro Shimizu ,  Yoshio Mizuhara ,  Hideaki Shinohara ,  Hisayoshi Mito

IPC: B41M5/50

CPC classification number: B41M5/44 ,  B41M5/42 ,  B41M2205/02 ,  B41M2205/06 ,  B41M2205/32 ,  B41M2205/38

Abstract: A thermal transfer receiving sheet having laminated, on one side of its support, an intermediate layer, a barrier layer and an image receiving layer in this order, wherein said intermediate layer comprises hollow particles, and said barrier layer comprises a polyvinyl alcohol derivative, and comprises, as further main components, a resin or a mixture of two or more resins selected from the group consisting of a styrene-maleic acid copolymer, a styrene-acrylic copolymer, an acrylic acid ester polymer and polyester, or wherein said barrier layer comprises, as main components, an ethylene vinyl alcohol copolymer and polyurethane.

Abstract translation: 一种热转印接收片，其在其支撑体的一侧依次层叠有中间层，阻挡层和图像接收层，其中所述中间层包括中空颗粒，并且所述阻挡层包含聚乙烯醇衍生物，和 作为其他主要成分，含有选自苯乙烯 - 马来酸共聚物，苯乙烯 - 丙烯酸共聚物，丙烯酸酯聚合物和聚酯中的两种或更多种树脂的树脂或混合物，或其中所述阻挡层包含 作为主要成分，乙烯乙烯醇共聚物和聚氨酯。

公开(公告)号：US07495262B2

公开(公告)日：2009-02-24

申请号：US11227292

申请日：2005-09-16

Applicant: Toshikazu Onishi

Inventor： Toshikazu Onishi

IPC: H01L31/072

CPC classification number: H01L33/305 ,  B82Y20/00 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02546 ,  H01L21/02579 ,  H01S5/209 ,  H01S5/2275 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/34326

Abstract: An inventive method includes the steps of: growing a first p-type semiconductor layer of a compound semiconductor containing phosphorus on a substrate; and growing a second p-type semiconductor layer of a compound semiconductor containing arsenic on the first p-type semiconductor layer. While the first p-type semiconductor layer is grown, magnesium is added to the first semiconductor layer. While the second p-type semiconductor layer is grown, a p-type impurity other than magnesium is added to the second semiconductor layer.

Abstract translation: 本发明的方法包括以下步骤：在衬底上生长含有磷的化合物半导体的第一p型半导体层; 以及在第一p型半导体层上生长含有砷的化合物半导体的第二p型半导体层。 当第一p型半导体层生长时，向第一半导体层添加镁。 当第二p型半导体层生长时，除了镁之外的p型杂质被添加到第二半导体层。

公开(公告)号：US07459719B2

公开(公告)日：2008-12-02

申请号：US11304816

申请日：2005-12-16

Applicant: Jun Shimizu ,  Tetsuzo Ueda ,  Toshikazu Onishi

Inventor： Jun Shimizu ,  Tetsuzo Ueda ,  Toshikazu Onishi

IPC: H01L29/06

CPC classification number: B82Y20/00 ,  H01S5/18311 ,  H01S5/3406 ,  H01S5/3407 ,  H01S5/34313 ,  H01S5/34373 ,  H01S2301/176

Abstract: An optical semiconductor device includes an active layer having a quantum well structure including alternately stacked well layers and barrier layers with a larger band gap than the well layers. The band gap of each of the well layers and the barrier layers is constant, each well layer is uniformly provided with compression strain and each barrier layer is provided with large extension strain in a center portion thereof along the thickness direction and small extension strain in portions thereof in the vicinity of the well layers.

Abstract translation: 光学半导体器件包括具有量子阱结构的有源层，其包括具有比阱层更大的带隙的交替堆叠的阱层和势垒层。 每个阱层和阻挡层的带隙是恒定的，每个阱层均匀地具有压缩应变，并且每个阻挡层在其中心部分沿着厚度方向具有大的延伸应变，并且部分地具有小的延伸应变 在阱层附近。

公开(公告)号：US20080103043A1

公开(公告)日：2008-05-01

申请号：US11663475

申请日：2005-10-05

Applicant: Kyoko Uchida ,  Toshikazu Onishi ,  Toru Nakai ,  Yoshimasa Tanaka ,  Yoshihiro Shimizu ,  Masato Kawamura

Inventor： Kyoko Uchida ,  Toshikazu Onishi ,  Toru Nakai ,  Yoshimasa Tanaka ,  Yoshihiro Shimizu ,  Masato Kawamura

IPC: B41M5/382

CPC classification number: B41M5/52 ,  B41M5/42 ,  B41M5/44 ,  B41M5/50 ,  B41M5/502 ,  B41M2205/02 ,  B41M2205/32 ,  B41M2205/38

Abstract: A thermal transfer receiving sheet comprising: the sequential formation of an intermediate layer containing hollow particles and an image receiving layer on at least one side of a sheet-form substrate; wherein, the mean particle diameter of the hollow particles is 0.2 to 30 μm, the volumetric hollow rate is 40 to 95%, the printing smoothness (Rp value) of the surface of the image receiving layer as determined 10 msec after the start of pressurization at a printing pressure of 0.1 MPa using a microtopograph is 1.5 μm or less, and the 20° gloss in accordance with JIS Z 8741 is 80 or less.

Abstract translation: 一种热转印接收片，包括：在片状基底的至少一侧上顺序地形成含有中空颗粒的中间层和图像接收层; 其中，中空粒子的平均粒径为0.2〜30μm，体积中空率为40〜95％，加压开始10秒后确定图像接收层的表面的印刷平滑度（Rp值） 使用微照相印刷机的印刷压力为0.1MPa时为1.5μm以下，根据JIS Z 8741的20°光泽度为80以下。

公开(公告)号：US20080085831A1

公开(公告)日：2008-04-10

申请号：US11596817

申请日：2005-05-17

Applicant: Masato Kawamura ,  Yoshimasa Tanaka ,  Toshikazu Onishi ,  Kyoko Uchida ,  Chikara Tsukada ,  Toru Nakai ,  Kazuyuki Tachibana ,  Yoshihiro Shimizu ,  Yoshio Mizuhara ,  Hideaki Shinohara ,  Hisayoshi Mito

Inventor： Masato Kawamura ,  Yoshimasa Tanaka ,  Toshikazu Onishi ,  Kyoko Uchida ,  Chikara Tsukada ,  Toru Nakai ,  Kazuyuki Tachibana ,  Yoshihiro Shimizu ,  Yoshio Mizuhara ,  Hideaki Shinohara ,  Hisayoshi Mito

IPC: B41M5/03

CPC classification number: B41M5/44 ,  B41M5/42 ,  B41M2205/02 ,  B41M2205/06 ,  B41M2205/32 ,  B41M2205/38

Abstract: A thermal transfer receiving sheet having laminated, on one side of its support, an intermediate layer, a barrier layer and an image receiving layer in this order, wherein said intermediate layer comprises hollow particles, and said barrier layer comprises a polyvinyl alcohol derivative, and comprises, as further main components, a resin or a mixture of two or more resins selected from the group consisting of a styrene-maleic acid copolymer, a styrene-acrylic copolymer, an acrylic acid ester polymer and polyester, or wherein said barrier layer comprises, as main components, an ethylene vinyl alcohol copolymer and polyurethane.

Abstract translation: 一种热转印接收片，其在其支撑体的一侧依次层叠有中间层，阻挡层和图像接收层，其中所述中间层包括中空颗粒，并且所述阻挡层包含聚乙烯醇衍生物，和 作为其他主要成分，含有选自苯乙烯 - 马来酸共聚物，苯乙烯 - 丙烯酸共聚物，丙烯酸酯聚合物和聚酯中的两种或更多种树脂的树脂或混合物，或其中所述阻挡层包含 作为主要成分，乙烯乙烯醇共聚物和聚氨酯。

公开(公告)号：US20060252335A1

公开(公告)日：2006-11-09

申请号：US11234277

申请日：2005-09-26

Applicant: Toshikazu Onishi ,  Yoshikazu Banno ,  Michiyo Nishimura ,  Toshihiko Takeda ,  Keisuke Yamamoto ,  Tomoko Maruyama

Inventor： Toshikazu Onishi ,  Yoshikazu Banno ,  Michiyo Nishimura ,  Toshihiko Takeda ,  Keisuke Yamamoto ,  Tomoko Maruyama

IPC: H01J9/44 ,  H01J9/00

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J9/027 ,  H01J31/127 ,  H01J2201/3165

Abstract: A method for manufacturing an electron emission element comprising, between its electrodes, a conductive film having an electron emission section. The method comprising the steps of forming a gap in the conductive film located between the electrodes, and applying a voltage between the electrodes in an atmosphere that has an aromatic compound with a polarity or a polar group and in which the partial pressure ratio of water to the aromatic compound is 100 or less.

公开(公告)号：US20060245459A1

公开(公告)日：2006-11-02

申请号：US11410048

申请日：2006-04-25

Applicant: Toshikazu Onishi ,  Kazutoshi Onozawa ,  Tetsuzo Ueda

Inventor： Toshikazu Onishi ,  Kazutoshi Onozawa ,  Tetsuzo Ueda

IPC: H01S5/00

CPC classification number: H01S5/18358 ,  B82Y20/00 ,  H01S5/18311 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/34313 ,  H01S2301/176

Abstract: A semiconductor laser device includes: an active layer formed on a substrate and including an AlGaAs layer; and an upper spacer layer formed at least one of above and below the active layer and including AlaGabIn1-a-bP (where 0≦a≦1, 0≦b≦1, and 0≦a+b≦1). The upper spacer layer has a composition enough to serve as a barrier layer against electrons injected into the active layer.

Abstract translation: 半导体激光器件包括：形成在衬底上并包括AlGaAs层的有源层; 以及形成在有源层的上方和下方中的至少一个并且包括Al-1-ab P（其中第一个和第二个）的上隔离层 0 <= a <= 1，0 <= b <= 1，0 <= a + b <= 1）。 上间隔层具有足以用作抵抗注入有源层的电子的阻挡层的组成。

公开(公告)号：US20060081872A1

公开(公告)日：2006-04-20

申请号：US11227292

申请日：2005-09-16

Applicant: Toshikazu Onishi

Inventor： Toshikazu Onishi

IPC: H01L33/00

CPC classification number: H01L33/305 ,  B82Y20/00 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02546 ,  H01L21/02579 ,  H01S5/209 ,  H01S5/2275 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/34326

Abstract: An inventive method includes the steps of: growing a first p-type semiconductor layer of a compound semiconductor containing phosphorus on a substrate; and growing a second p-type semiconductor layer of a compound semiconductor containing arsenic on the first p-type semiconductor layer. While the first p-type semiconductor layer is grown, magnesium is added to the first semiconductor layer. While the second p-type semiconductor layer is grown, a p-type impurity other than magnesium is added to the second semiconductor layer.