公开(公告)号：US20230033913A1

公开(公告)日：2023-02-02

申请号：US17791769

申请日：2020-08-17

申请人： SUMCO CORPORATION

发明人： Kaito NODA ,  Kazuhiro OHKUBO ,  Yuki NAKAO ,  Michihiko TOMITA

IPC分类号： H01L21/67 ,  H01L21/687

摘要： Provided is a cleaning apparatus and a cleaning method for semiconductor wafers that can hinder a mist of a cleaning solution from being adhered to a surface of a semiconductor wafer during cleaning of the semiconductor wafer. In a cleaning apparatus 1 for a semiconductor wafer, a spin cup 20 has an annular side wall portion 21; an inclined portion 22 that is inclined toward the rotating table 13; and an annular bent portion 23. The height position h21 of the upper end portion 21c of the side wall portion 21 is set at a position lower than the height position h14a of the upper end portion 14a of the wafer retainer portion 14, and the inclination angle θ22 of the inclined portion to a horizontal plane and the width w of the inclined portion satisfy a formula (A): θ22(°)≥−0.65×w (mm)+72.9°  (A)

公开(公告)号：US11554458B2

公开(公告)日：2023-01-17

申请号：US17055735

申请日：2019-02-13

申请人： SUMCO CORPORATION

发明人： Yuki Nakano ,  Katsuhisa Sugimori ,  Kazuaki Kozasa ,  Jiro Kajiwara ,  Katsutoshi Yamamoto ,  Takayuki Kihara ,  Ryoya Terakawa

IPC分类号： B24B37/32 ,  B24B7/22 ,  B24B37/10 ,  B24B57/02

摘要： A polishing head of a wafer polishing apparatus is provided with: a membrane head that can independently control a center control pressure pressing a center portion of a wafer, and an outer periphery control pressure pressing an outer peripheral portion of the wafer; an outer ring integrated with the membrane head so as to configure the outer peripheral portion of the membrane head; and a contact type retainer ring provided outside the membrane head. The membrane head has a central pressure chamber of a single compartment structure that controls the center control pressure, and an outer peripheral pressure chamber that is provided above the central pressure chamber, and that controls the outer periphery control pressure. A position of a lower end of the outer ring reaches at least a position of an inner bottom surface of the central pressure chamber.

公开(公告)号：US11551922B2

公开(公告)日：2023-01-10

申请号：US16467273

申请日：2017-09-22

申请人： SUMCO CORPORATION

发明人： Tsuyoshi Morita

IPC分类号： H01L21/02 ,  B24B9/06 ,  B24B37/08 ,  C30B15/00 ,  C30B29/06 ,  H01L21/67

摘要： Provided are a method of polishing a silicon wafer and a method of producing a silicon wafer which can reduce the formation of step-forming microdefects on a silicon wafer. The method includes: a double-side polishing step of performing polishing on front and back surfaces of a silicon wafer; a notch portion polishing step of performing polishing on a beveled portion of a notch portion of the silicon wafer after the double-side polishing step; a peripheral beveled portion polishing step of performing polishing on the beveled portion on the periphery of the silicon wafer other than the beveled portion of the notch portion after the notch portion polishing step; and a finish polishing step of performing finish polishing on the front surface of the silicon wafer after the peripheral beveled portion polishing step. The notch portion polishing step is performed in a state where the front surface is wet with water.

公开(公告)号：US20220406599A1

公开(公告)日：2022-12-22

申请号：US17807705

申请日：2022-06-17

申请人： SUMCO Corporation

发明人： Naoyuki WADA

IPC分类号： H01L21/20 ,  H01L21/67

摘要： A control device includes a calculation unit generating control information for an epitaxial growth apparatus; and a storage unit storing measurement values for an epitaxial film formed by the epitaxial growth apparatus and measurement values for epitaxial films formed by a plurality of other epitaxial growth apparatuses that are provided in the same production line as the epitaxial growth apparatus that needs new control. The calculation unit generates and outputs information for controlling at least one of the supply time of a source gas and the flow rate of a dopant gas in the epitaxial growth apparatus based on the measurement values for the epitaxial film formed by the epitaxial growth apparatus that needs new control and the measurement values of the epitaxial films formed by the other epitaxial growth apparatuses in the same production line that are in operation concurrently with the epitaxial growth apparatus.

公开(公告)号：US11501996B2

公开(公告)日：2022-11-15

申请号：US16641996

申请日：2017-08-31

申请人： SUMCO Corporation

发明人： Kazuhiro Narahara

IPC分类号： H01L21/68 ,  H01L21/687 ,  C23C16/458 ,  C30B25/12 ,  C30B29/36 ,  H01L21/02 ,  H01L29/16

摘要： Provided is a susceptor which makes it possible to increase the circumferential flatness uniformity of an epitaxial layer of an epitaxial silicon wafer.
A susceptor 100 is provided with a concave counterbore portion on which a silicon wafer W is placed, and the radial distance L between the center of the susceptor and an opening edge of the counterbore portion varies at 90° periods in the circumferential direction. Meanwhile, when the angle at which the radial distance L is minimum is 0°, the radial distance L is a minimum value L1 at 90°, 180°, and 270°; and the radial distance L is a maximum value L2 at 45°, 135°, 225°, and 315°. Accordingly, the pocket width Lp also varies in conformance with the variations of the radial distance L. The opening edge 110C describes four elliptical arcs being convex radially outward when the susceptor 100 is viewed from above.

公开(公告)号：US11473210B2

公开(公告)日：2022-10-18

申请号：US16500183

申请日：2018-03-16

申请人： SUMCO CORPORATION

发明人： Kaoru Kajiwara ,  Ryota Suewaka ,  Shunji Kuragaki ,  Kazumi Tanabe

IPC分类号： C30B15/14 ,  C30B29/06

摘要： Provided is a heat shielding member, a single crystal pulling apparatus, and a method of producing a single crystal silicon ingot, which can expand the margin of the crystal pulling rate with which a defect-free single crystal silicon can be obtained. A heat shielding member is provided in a single crystal pulling apparatus, the heat shielding member including a cylindrical tubular portion surrounding an outer circumferential surface of the single crystal silicon ingot; and a ring-shaped projecting portion under the tubular portion. The projecting portion has an upper wall, a bottom wall, and two vertical walls, a heat insulating material with a ring shape is provided in the space surrounded by those walls; and a gap between the vertical wall adjacent to the single crystal silicon ingot and the heat insulating material.

公开(公告)号：US11462409B2

公开(公告)日：2022-10-04

申请号：US16323438

申请日：2017-08-07

申请人： SUMCO CORPORATION

发明人： Naoya Nonaka ,  Tadashi Kawashima ,  Katsuya Ookubo

IPC分类号： H01L21/20 ,  C30B29/06 ,  C23C16/24 ,  H01L21/205 ,  H01L21/02 ,  H01L29/167

摘要： An epitaxial silicon wafer includes: a silicon wafer doped with phosphorus as a dopant and having an electrical resistivity of less than 1.0 m Ω·cm; and an epitaxial film formed on the silicon wafer. The silicon wafer includes: a main surface to which a (100) plane is inclined; and a [100] axis that is perpendicular to the (100) plane and inclined at an angle ranging from 0°30′ to 0°55′ in any direction with respect to an axis perpendicular to the main surface. The epitaxial silicon wafer has at most 1/cm2 of a density of a hillock defect generated thereon.

公开(公告)号：US11421342B2

公开(公告)日：2022-08-23

申请号：US16467766

申请日：2017-12-07

申请人： SUMCO CORPORATION

发明人： Hirokazu Kato ,  Takashi Muramatsu

IPC分类号： G01N1/40 ,  C30B29/06 ,  C30B31/10 ,  G01N31/00 ,  G01N1/28

摘要： Provided is a method of decomposing a quartz sample, which includes contacting a liquid in which at least a part of a quartz sample to be analyzed is immersed with a gas generated from a mixed acid to decompose at least a part of the quartz sample, wherein the liquid is a liquid containing at least water; and the mixed acid is a mixed acid of hydrogen fluoride and sulfuric acid, and a mole fraction of sulfuric acid in the mixed acid ranges from 0.07 to 0.40.

公开(公告)号：US11373858B2

公开(公告)日：2022-06-28

申请号：US16348345

申请日：2017-09-07

申请人： SUMCO Corporation

发明人： Makoto Funayama

IPC分类号： H01L21/02 ,  B28D5/04 ,  C09K3/14

摘要： Provided are abrasive grains, an evaluation method and a wafer manufacturing method. A predetermined amount of abrasive grains is prepared as an abrasive grain sample group, the grain diameter of individual abrasive grains in the abrasive grain sample group is measured, the number of abrasive grains in the abrasive grain sample group as a whole is counted, abrasive grains having a grain diameter equal to or smaller than a predetermined reference grain e diameter criterion which is smaller than the average grain diameter of the abrasive grain sample are defined as small grains and the number of the small grains is counted, a small grain ratio is calculated as the number ratio of the small grains occupied in the abrasive grain sample group as a whole, and a determination is made as to whether or not the small grain ratio is equal to or smaller than a predetermined threshold value.

公开(公告)号：US20220184772A1

公开(公告)日：2022-06-16

申请号：US17440082

申请日：2019-12-26

申请人： SUMCO Corporation

发明人： Yuji MIYAZAKI

IPC分类号： B24B37/08

摘要： A double-side polishing method for a work includes: a pre-polishing index calculation step of calculating an index Xp for a work having been subjected to double-side polishing in the last batch; a target polishing time calculation step of calculating a target polishing time of the current batch using a predetermined prediction formula; and a double-side polishing step of performing double-side polishing of a work using the target polishing time. A double-side polishing apparatus for a work includes: a measurement unit for measuring thicknesses of a work having been subjected to double-side polishing in the last batch; a first calculation unit calculating an index Xp; a second calculation unit calculating a target polishing time Tt of the current batch using a predetermined prediction formula; and a control unit controlling double-side polishing of the work using the calculated target polishing time Tt.