- 专利标题： CONTROL DEVICE AND CONTROL METHOD FOR SINGLE-WAFER PROCESSING EPITAXIAL GROWTH APPARATUS, AND EPITAXIAL WAFER PRODUCTION SYSTEM
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申请号： US17807705申请日： 2022-06-17
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公开(公告)号： US20220406599A1公开(公告)日： 2022-12-22
- 发明人: Naoyuki WADA
- 申请人： SUMCO Corporation
- 申请人地址： JP Tokyo
- 专利权人： SUMCO Corporation
- 当前专利权人： SUMCO Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2021-101969 20210618
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/67
摘要：
A control device includes a calculation unit generating control information for an epitaxial growth apparatus; and a storage unit storing measurement values for an epitaxial film formed by the epitaxial growth apparatus and measurement values for epitaxial films formed by a plurality of other epitaxial growth apparatuses that are provided in the same production line as the epitaxial growth apparatus that needs new control. The calculation unit generates and outputs information for controlling at least one of the supply time of a source gas and the flow rate of a dopant gas in the epitaxial growth apparatus based on the measurement values for the epitaxial film formed by the epitaxial growth apparatus that needs new control and the measurement values of the epitaxial films formed by the other epitaxial growth apparatuses in the same production line that are in operation concurrently with the epitaxial growth apparatus.
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