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公开(公告)号：US20240007094A1
公开(公告)日：2024-01-04
申请号：US18328282
申请日：2023-06-02
Inventor： Hironori AKIYAMA
CPC classification number: H03K17/08 , H03K17/161 , H02M1/08
Abstract: A gate driver drives a gate of a semiconductor switching element. The gate driver includes a command signal output circuit, a pre-drive circuit and a drive circuit. The command signal output circuit outputs a current command signal that indicates a command value of a gate current as a current flowing through the gate of the semiconductor switching element. The pre-drive circuit receives the current command signal and generate a drive signal corresponding to the current command signal to output the drive signal. The drive circuit drives the gate of the semiconductor switching element based on the drive signal. The command signal output circuit switches the command value indicated by the current command signal while controlling a transient voltage at a desired target value. The drive circuit includes output circuits connected in parallel. Each of output circuits has at least one cascode circuit in which two MOSFETs are cascode-connected.
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公开(公告)号：US20230421170A1
公开(公告)日：2023-12-28
申请号：US18340070
申请日：2023-06-23
Inventor： Shotaro WADA , Tomohiro NEZUKA , Yoshikazu FURUTA
IPC: H03M3/00
Abstract: A delta-sigma modulator includes a capacitively-coupled amplifier, a first integrator, a second integrator, a quantizer, a first switch, a second switch, and a control circuit. The first switch is connected between an input of the capacitively-coupled amplifier and a sampling capacitor of the capacitively-coupled amplifier to execute a chopping operation. The second switch is connected between an output of the capacitively-coupled amplifier and an input of the first integrator to execute a chopping operation. The control circuit executes modulation through the first switch at the input of the capacitively-coupled amplifier, executes demodulation through the second switch at the output of the capacitively-coupled amplifier, and imports an output signal of the capacitively-coupled amplifier into the first integrator after the demodulation.
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公开(公告)号：US20230411066A1
公开(公告)日：2023-12-21
申请号：US18319045
申请日：2023-05-17
Inventor： Ryota KOJIMA , Akihiro YAMAGUCHI
CPC classification number: H01F27/2804 , H01F2027/2814 , H01F27/292 , H01F27/2885
Abstract: A transformer includes a core and a primary winding, a first secondary winding, and a second secondary winding wound around the core. The first secondary winding includes first winding layers stacked along an axial direction of the core. The second secondary winding includes second winding layers stacked along the axial direction. The first winding layers are electrically connected in parallel to each other. The second winding layers are electrically connected in parallel to each other. A distance between the primary winding and the first secondary winding and a distance between the primary winding and the second secondary winding are greater than a distance between adjacent two of the first winding layers and a distance between adjacent two of the second winding layers.
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公开(公告)号：US20230369417A1
公开(公告)日：2023-11-16
申请号：US18357276
申请日：2023-07-24
Inventor： Hiroki MIYAKE
IPC: H01L29/36 , H01L29/24 , H01L21/425
CPC classification number: H01L29/36 , H01L29/24 , H01L21/425 , H01L29/7813
Abstract: A semiconductor device includes: a first semiconductor layer having an N conductive type and made of a gallium oxide-based semiconductor; and a second semiconductor layer made of a gallium oxide-based semiconductor, in contact with the first semiconductor layer, and having the N conductive type with an electrically active donor concentration higher than an electrically active donor concentration of the first semiconductor layer. A difference between a donor concentration of the first semiconductor layer and a donor concentration of the second semiconductor layer is smaller than a difference between the electrically active donor concentration of the first semiconductor layer and the electrically active donor concentration of the second semiconductor layer.
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公开(公告)号：US11815531B2
公开(公告)日：2023-11-14
申请号：US17875677
申请日：2022-07-28
Inventor： Tomohiro Nezuka , Yoshikazu Furuta , Shotaro Wada
CPC classification number: G01R15/146 , G01R1/071 , G01R15/242 , G01R15/246 , G01R27/02 , H02S50/00 , H02S50/10 , H02S50/15
Abstract: A current sensor of a detection target current using a shunt resistor includes: a resistance value correction circuit having: a correction resistor; a signal application unit that applies an alternating current signal to a series circuit of the shunt resistor and the correction resistor; a first voltage detection unit that detects the terminal voltage of the shunt resistor; a second voltage detection unit that detects a terminal voltage of the correction resistor; and a correction unit that calculates the resistance value of the shunt resistor based on a first voltage detection value by the first voltage detection unit and a second voltage detection value by the second voltage detection unit, and corrects the resistance value for current detection based on a calculated resistance value of the shunt resistor.
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Patent Agency Ranking
公开(公告)号：US20230326845A1
公开(公告)日：2023-10-12
申请号：US18145949
申请日：2022-12-23
Inventor： YOSHITAKA KATO , TAKESHI ENDO , KAZUHIRO TSURUTA
IPC: H01L23/498 , H01L23/29 , H01L23/532 , H01L21/56 , H05K1/11
CPC classification number: H01L23/49838 , H01L23/29 , H01L23/53204 , H01L21/563 , H05K1/111
Abstract: A circuit module includes: a first circuit component having electrode pads on a first surface; and a second circuit component having electrode pads on a second surface. A conductive bonding material joins the electrode pads of the first circuit component to the electrode pads of the second circuit component respectively. A first reinforcing bonding material is not in contact with the conductive bonding material and joins the first surface of the first circuit component to the second surface of the second circuit component. A second reinforcing bonding material is located in contact with the first reinforcing bonding material, and joins the first surface of the first circuit component to the second surface of the second circuit component.
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公开(公告)号：US20230324723A1
公开(公告)日：2023-10-12
申请号：US18192791
申请日：2023-03-30
Inventor： Taku SUZUKI , Tatsuya YAMASHITA , Naoya TAKE , Masashige SATO
CPC classification number: G02F1/0154 , G02F1/025 , G02F2203/50
Abstract: An optical phase modulator includes a rib part extending in an extending direction. The rib part includes an N-type first rib portion and a P-type second rib portion arranged in a width direction to have a PN junction therebetween along the extending direction. An N-type first slab portion is connected to the first rib portion and a P-type second slab portion is connected to the second rib portion to provide a PN structure with the rib part in a cross-section having a normal direction along the extending direction. A P-type third slab portion is connected to the first rib portion and an N-type fourth slab portion is connected to the second rib portion to have a PNPN structure with the rib part in a cross-section having a normal direction along the extending direction. The PN structure and the PNPN structure are alternately disposed in the extending direction.
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公开(公告)号：US20230308309A1
公开(公告)日：2023-09-28
申请号：US18187123
申请日：2023-03-21
Inventor： YOSHIKAZU FURUTA , SHIGEKI OTSUKA , TAKASUKE ITO , HYOUNGJUN NA , TOMOHIRO NEZUKA
IPC: H04L12/40 , G01R31/396
CPC classification number: H04L12/40 , G01R31/396 , H04L2012/40273 , H04L2012/40215
Abstract: An insulated communication system includes a communication controller that sets communication data to a communication symbol through a numeral system and executes insulated communication through an insulator by adopting the communication symbol. The numeral system includes multiple states having a positive state, a negative state and a zero state. The positive state is represented by at least one positive integer, and the negative state is represented by at least one negative integer. The zero state is represented by zero being a level without generating current consumption. An absolute value of the at least one positive integer and an absolute value of the at least one negative integer are identical to each other. The communication controller sets an initial section of the communication data in the communication symbol to the positive state or the negative state, and sets a following section of the communication data to one of the multiple states.
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公开(公告)号：US20230282705A1
公开(公告)日：2023-09-07
申请号：US18172590
申请日：2023-02-22
Inventor： MASATO NOBORIO , TOMOFUMI NIIBAYASHI , JUN SAITO
CPC classification number: H01L29/0696 , H01L29/7813 , H01L29/1608
Abstract: A semiconductor device includes a substrate, a drift layer of a first conductivity type, a first electrode, a second electrode, a plurality of gate electrodes, and a plurality of repeat regions of a second conductivity type. When center lines respectively passing through centers of the gate electrodes in an arrangement direction of the gate electrodes and extending in a thickness direction of the substrate are defined as cell center lines, a distance between adjacent two of the cell center lines is defined as a cell pitch, center lines respectively passing through centers of the repeat regions in the arrangement direction are defined as repeat center lines, and a distance between adjacent two of the repeat center lines in the arrangement direction is defined as a repeat pitch, the cell pitch is different from the repeat pitch.
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280.发明公开公开(公告)号：US20230279580A1
公开(公告)日：2023-09-07
申请号：US18161288
申请日：2023-01-30
Inventor： Akiyoshi HORIAI , Takeshi OKAMOTO , Takahiro KANDA , Norihiro HOSHINO , Kiyoshi BETSUYAKU , Isaho KAMATA , Hidekazu TSUCHIDA , Takashi KANEMURA
Abstract: A manufacturing method of a silicon carbide single crystal includes growing the silicon carbide single crystal on a surface of a seed crystal by supplying a supply gas including a raw material gas of silicon carbide to the surface of the seed crystal and controlling an environment so that at least a part inside the heating vessel is 2500° C. or higher. The growing the silicon carbide single crystal includes controlling a temperature distribution ΔT in a radial direction centering on central axis of the seed crystal and the silicon carbide single crystal satisfies a radial direction temperature condition of ΔT≤10° C. on the surface of the seed crystal before the growing of the silicon carbide single crystal and on a growth surface of the silicon carbide single crystal during the growing of the silicon carbide single crystal.
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