Reflective current and magnetic sensors based on optical sensing with integrated temperature sensing

    公开(公告)号:US12111338B2

    公开(公告)日:2024-10-08

    申请号:US17336278

    申请日:2021-06-01

    IPC分类号: G01R15/24 G01K11/32 G01R19/00

    摘要: Optical techniques and sensor devices for sensing or measuring electric currents and/or temperature based on photonic sensing techniques in optical reflection modes by using optical dielectric materials exhibiting Faraday effects are provided in various configurations. The disclosed optical sensing technology uses light to carry and transmit the current or temperature information obtained at the sensing location to a remote base station and this optical transmission allows remote sensing in various applications and provide a built-in temperature calibration mechanism to enhance the measurement accuracy in a range of different temperature conditions.

    METHOD FOR MONITORING AT LEAST ONE SEMICONDUCTOR ELEMENT IN A SEMICONDUCTOR MODULE

    公开(公告)号:US20240230724A9

    公开(公告)日:2024-07-11

    申请号:US18278766

    申请日:2022-01-11

    IPC分类号: G01R15/24

    CPC分类号: G01R15/246

    摘要: A method for monitoring a semiconductor element in a semiconductor module, wherein the semiconductor module has feed lines contacting the semiconductor element, includes arranging a magneto-optical sensor in a region of the semiconductor element or of at least one of the feed lines, reflecting a polarized light signal from the magneto-optical sensor or transmitting a polarized light signal through the magneto-optical sensor, and determining a current from a polarization of the reflected or transmitted light signal.

    METHOD FOR MONITORING AT LEAST ONE SEMICONDUCTOR ELEMENT IN A SEMICONDUCTOR MODULE

    公开(公告)号:US20240133924A1

    公开(公告)日:2024-04-25

    申请号:US18278766

    申请日:2022-01-11

    IPC分类号: G01R15/24

    CPC分类号: G01R15/246

    摘要: A method for monitoring a semiconductor element in a semiconductor module, wherein the semiconductor module has feed lines contacting the semiconductor element, includes arranging a magneto-optical sensor in a region of the semiconductor element or of at least one of the feed lines, reflecting a polarized light signal from the magneto-optical sensor or transmitting a polarized light signal through the magneto-optical sensor, and determining a current from a polarization of the reflected or transmitted light signal.

    Interference type optical magnetic field sensor device

    公开(公告)号:US11892479B2

    公开(公告)日:2024-02-06

    申请号:US17627118

    申请日:2020-03-31

    IPC分类号: G01R15/24 G01R33/032

    CPC分类号: G01R15/246 G01R33/0322

    摘要: A magnetic field sensor element 1 includes a light emitter 10 emitting a first linearly polarized light, a first optical element 20 emitting a first linearly polarized wave and the second linearly polarized wave in response to a first linearly polarized light incident, and emitting a second linearly polarized light in response to a third linearly polarized wave and the a linearly polarized wave incident, at least one pair of magnetic field sensor elements 50 capable of disposing in a predetermined magnetic field across the measured conductor, having a light transmissive, changing the phase of transmitted light in accordance with the magnetic field, and fixing a relative position therebetween, an optical path 30 including a first optical path propagating the first linearly polarized wave and the fourth linearly polarized wave, and a second optical path propagating the second linearly polarized wave and the third linearly polarized wave, and connected to the first optical element and the magnetic field sensor element, a detected signal generator 60 outputting a detected signal corresponding to the magnetic field, by receiving two components of the second linearly polarized light, and converting to the electrical signal, and an optical branching element transmitting the first linearly polarized light to the first optical element and branching the second linearly polarized light to the detected signal generator.

    INTERFEROMETRIC VOLTAGE SENSOR WITH ERROR COMPENSATION

    公开(公告)号:US20180067147A1

    公开(公告)日:2018-03-08

    申请号:US15695858

    申请日:2017-09-05

    申请人: ABB Schweiz AG

    IPC分类号: G01R15/24 G01R19/00 G01R35/00

    摘要: In order to measure a voltage, an electro-optic element is placed in an electrical field generated by the voltage, and light is passed from a light source through a Faraday rotator and the electro-optic element onto a reflector and from there back through the electro-optic element and the Faraday rotator, thereby generating a voltage-dependent phase shift between two polarizations of the light. The interference contrast as well as a principal value of the total phase shift between said polarizations are measured and converted to a complex value having an absolute value equal to the contrast and a phase equal to the principal value. This complex value is offset and scaled using calibration values in order to calculate a compensated complex value. The voltage is derived from the compensated complex value.

    Electro-optic current sensor with high dynamic range and accuracy

    公开(公告)号:US09817038B2

    公开(公告)日:2017-11-14

    申请号:US15389752

    申请日:2016-12-23

    IPC分类号: G01R13/38 G01R15/24

    摘要: An optical sensor that senses current by directing polarized light across an airgap that is orthogonal to a direction of current running through a conductor. The sensor includes a prism having a high Verdet constant for high sensitivity to magnetic fields, which cause an angle of polarization of the polarized light to be rotated as an indication of the magnitude of current. A polarizing beamsplitter having a low Verdet constant is mounted to the prism so that incoming light that is traveling in a direction orthogonal to the magnetic field being sensed across the airgap is insensitive to unwanted magnetic fields produced by nearby conductors. The distance the light travels in this orthogonal direction is minimized, reducing the overall volume of the sensor, making a compact sensor highly sensitive to magnetic fields of interest, largely insensitive to unwanted magnetic fields, and having a very high dynamic range for sensing current.