Abstract:
A polysilicon thin film transistor, a manufacturing method thereof, an array substrate involve display technology field, and can repair the boundary defect and the defect state in polysilicon, suppress the hot carrier effect and make the characteristics of TFTs more stable. The polysilicon thin film transistor includes a gate electrode, a source electrode, a drain electrode and an active layer, the active layer comprises at least a channel area, first doped regions, second doped regions and heavily doped regions, and the first doped regions are disposed on two sides of the channel area, the second doped regions are disposed on sides of the first doped regions away from the channel area; the heavily doped regions are disposed on sides of the second doped regions opposed to the first doped regions; and dosage of ions in the heavily doped regions lies between that in the first doped regions and that in the second doped regions.
Abstract:
The embodiment of the invention provides a pixel driving circuit, a driving method for the pixel driving circuit and a display device, and relates to the technical field of display. According to the pixel driving circuit, the driving method for the pixel driving circuit and the display device, the situation that driving currents of an active light emitting device are affected by threshold voltage shift of a driving transistor can be avoided, and therefore the evenness of a displayed image is improved. The pixel driving circuit comprises a light emitting device, a storage capacitor, a driving unit and five switching units. The embodiments of the invention are used in e.g. display devices and manufacturing the same.
Abstract:
The present invention relates to the technical field of display by a touch screen, and particularly relates to a conductive bridging method, a bridging structure, a touch panel and a touch control display apparatus. The conductive bridging method comprises: sequentially forming an insulating layer and a self-assembled-monolayer on the base substrate provided with first electrode lines and second electrode lines which mutually intersect; forming via holes penetrating through the insulating layer and the self-assembled-monolayer; removing the self-assembled-monolayer between two adjacent via holes close to a same first electrode line; and forming a conductive film in the via holes and in a region between two adjacent via holes. In this way, a bridging connection is achieved with the help of the electrical conductivity of the conductive film.
Abstract:
A display substrate, a method for manufacturing thereof, a display panel and a method for manufacturing thereof are disclosed. The display substrate includes a display region and a sealing region surrounding the display region. A plurality of through holes are formed within the sealing region of the display substrate.
Abstract:
An organic light emitting diode (OLED) device includes a cathode, an anode and an organic function layer interposed between the cathode and the anode. A material of the cathode is at least one of a metal and a metal alloy. The light emitted from the organic function layer exits at least through the cathode. The organic light emitting diode device further includes an anti-reflective layer on a side of the cathode that faces away from the organic function layer. The anti-reflective layer includes a first surface and a second surface opposite to each other. The first surface contacts the cathode. External light reflected by the first surface and external light reflected by the second surface interfere destructively.
Abstract:
An array substrate includes a substrate and data lines and scan lines arranged on the substrate. The data lines and the scan lines define plural pixel regions. A thin film transistor is arranged in each pixel region and includes a gate electrode, a source electrode, a drain electrode, and an active region. The gate electrode is arranged above the active region. The source electrode and the drain electrode are arranged at two opposite sides of the active region respectively. A light shielding metal layer is further arranged in each pixel region. The light shielding metal layer and the data lines are arranged in the same layer on the substrate. The light shielding metal layer is arranged under the active region and at least partially overlaps with the active region. The data line is close to the source electrode and does not overlap with the active region at least partially.
Abstract:
The present disclosure provides a crucible and an evaporation device. The crucible includes an external wall, an internal wall and a heating member arranged outside the external wall. The external wall and the internal wall define a cavity, and a heat transfer liquid is received in the cavity.
Abstract:
Provided are a GOA unit and driving method, a GOA circuit and a display apparatus. A first node control unit (31) pulls a first node (PU) to a voltage at a first level terminal (CN) under the control of a first input terminal (IN), or to a voltage at a second level terminal (CNB) under the control of a second input terminal (INPUT). A second node control unit (32) pulls a second node (PD) to a voltage at a third level terminal (VGH) under the control of the first level terminal (CN), the second level terminal (CNB), a second clock signal terminal (CK2) and a third clock signal terminal (CK3), or to a voltage at a fourth level terminal (VGL) under the control of the first node (PU). An output unit (33) outputs a signal at the first clock signal terminal (CK1) under the control of the first node (PU), or pulls the output terminal (OUTPUT) to the voltage at the fourth level terminal (VGL) under the control of the second node (PD).
Abstract:
An encapsulating method, a display panel and a display apparatus, the encapsulating method including: forming a frit layer in an encapsulating area of a first substrate; forming a glass network modifier oxide layer on the surface of the frit layer; a first-sintering for the frit layer and the glass network modifier oxide layer; and aligning and attaching the first substrate and a second substrate, and forming an encapsulating structure through irradiating the encapsulating area by a laser. The encapsulating method can improve the liquidity of the surface of the frit layer and make the surface of the frit planarization after sintering at high temperature, so that the production of the holes of the surface of the frit layer can be reduced in the process of being encapsulated by a laser, and then the effect of encapsulating is improved.
Abstract:
The present disclosure provides a laser sintering apparatus and a laser sintering method. The laser sintering apparatus includes a first laser head configured to output a laser beam at a first power level, a second laser head configured to output a laser beam at a second power level, and a driving device configured to drive the first laser head and the second laser head to move, so as to enable the first laser head and the second laser head to heat an identical region of a to-be-sintered material.