公开(公告)号：US20040188636A1

公开(公告)日：2004-09-30

申请号：US10806190

申请日：2004-03-23

Applicant: CANON KABUSHIKI KAISHA ,  HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masaki Hosoda ,  Masato Muraki ,  Hiroya Ohta ,  Haruo Yoda

IPC: H01J037/302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/1471 ,  H01J37/3177 ,  H01J2237/30455

Abstract: An electron beam exposure apparatus which exposes a wafer (118) by using a plurality of electron beams corrects the positional error of the electron beams by using multi-deflector arrays (105, 106) capable of independently deflecting the positions of the electron beams, and pattern data to be projected onto the wafer (118). More specifically, when each of the electron beams is deflected to a predetermined exposure position on the basis of the pattern data, a static positional error independent of the deflection position is corrected by the multi-deflector arrays (105, 106), and a dynamic positional error depending on the deflection position is corrected on the basis of the pattern data.

Abstract translation: 通过使用多个电子束使晶片（118）曝光的电子束曝光装置通过使用能够独立地偏转电子束的位置的多偏转阵列（105,106）来校正电子束的位置误差，以及 图案数据被投影到晶片（118）上。 更具体地说，当基于图案数据将每个电子束偏转到预定曝光位置时，通过多偏转器阵列（105,106）校正与偏转位置无关的静态位置误差，并且动态 基于图案数据来校正取决于偏转位置的位置误差。

公开(公告)号：US20040036040A1

公开(公告)日：2004-02-26

申请号：US10226414

申请日：2002-08-23

Inventor： William A. Stanton ,  Eugene A. DeLaRosa

IPC: H01J037/302

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/68 ,  G03F1/78 ,  H01J2237/31764 ,  H01J2237/31776

Abstract: The present invention is generally directed to various reticle writing methodologies to reduce write time, and a system for performing same. In one illustrative embodiment, the method comprises exposing a layer of photoresist in accordance with a first writing pattern in a first area of the layer of photoresist and exposing the layer of photoresist in accordance with a second writing pattern in a second area of the layer of photoresist, the first and second areas of the layer of photoresist overlapping one another in at least one region. In another illustrative embodiment, the method comprises creating a collection of digital data corresponding to a desired pattern for a reticle and separating the collection of digital data into at least two separate groups of data, a first of the data groups being used to define a first writing pattern for the reticle, a second of the data groups being used to define a second writing pattern for the reticle, wherein the first and second writing patterns overlap one another in at least one region. In yet another illustrative embodiment, the method comprises forming a layer of photoresist above at least one of a semiconducting substrate and a process layer, exposing the layer of photoresist in accordance with a first writing pattern in a first area of the layer of photoresist, and exposing the layer of photoresist in accordance with a second writing pattern in a second area of the layer of photoresist, wherein the first and second areas overlap one another in at least one region.

公开(公告)号：US20030173527A1

公开(公告)日：2003-09-18

申请号：US10297809

申请日：2003-03-05

Inventor： Tatsuya Adachi ,  Toshiaki Fujii ,  Yasuhiko Sugiyama

IPC: G21G005/00 ,  A61N005/00 ,  H01J037/302

CPC classification number: H01J37/147 ,  H01J37/3056

Abstract: A signal component for scanning a processing range and a signal component for synchronizing to movement of a moving stage are superimposed on an ion beam scanning signal. Using such a scanning signal, processing is carried out while moving a sample stage. In this way, it is possible to carry out processing using a focused ion beam device in a reduced amount of time for a plurality of samples.

Abstract translation: 用于扫描处理范围的信号分量和用于与移动台的移动同步的信号分量叠加在离子束扫描信号上。 使用这样的扫描信号，在移动样品台的同时进行处理。 以这种方式，可以在多个样本的减少的时间内对聚焦离子束装置进行处理。

公开(公告)号：US20030160191A1

公开(公告)日：2003-08-28

申请号：US10355178

申请日：2003-01-31

Applicant: Dainippon Screen Mfg. Co., Ltd.

Inventor： Kazuhiro Nakai ,  Yoshihiko Onogawa

IPC: H01J037/302

CPC classification number: H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31735 ,  H01J2237/31762 ,  H01J2237/31764

Abstract: A beam direct-writing apparatus for writing a pattern on a semiconductor substrate is provided with a head part for emitting an electron beam for direct writing and a computer for performing a computation. A program is installed in the computer in advance to obtain a path passing through a plurality of writing points on the substrate. The program divides a region (6) dotted with writing points (60) into a plurality of divided regions on the basis of the density of the points contained therein and sets a passing order among a plurality of divided regions by using an algorithm for generating the Hilbert Curve. Subsequently, the program sets a path in each of the divided regions by using a path setting algorithm and subsequently connects the path in one divided region to the path in another divided region according to the passing order, to obtain a final path (74). This allows an efficient beam direct-writing on a substrate (9).

Abstract translation: 用于在半导体衬底上写入图案的光束直写装置设置有用于发射用于直接写入的电子束的头部和用于执行计算的计算机。 预先在计算机中安装程序以获得通过基板上的多个写入点的路径。 该程序根据其中所包含的点的密度将带有写入点（60）的区域（6）分成多个分割区域，并且通过使用用于生成多个分割区域的算法来设置多个分割区域之间的通过顺序 希尔伯特曲线。 随后，程序通过使用路径设置算法设置每个分割区域中的路径，然后根据传递顺序将一个分割区域中的路径连接到另一分割区域中的路径，以获得最终路径（74）。 这允许在衬底（9）上有效的光束直接写入。

公开(公告)号：US20030111618A1

公开(公告)日：2003-06-19

申请号：US10264093

申请日：2002-10-02

Applicant: Nikon Corporation

Inventor： Jin Udagawa ,  Noriyuki Hirayanagi

IPC: H01J037/302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/30433

Abstract: Charged-particle-beam (CPB) microlithography systems are disclosed that include a device for measuring the distribution of charged-particle density in a patterned beam. By providing feedback to the CPB microlithography apparatus, the distribution of charged-particle density can be optimized for high-quality exposures. An embodiment of the device includes a pinhole diaphragm defining an aperture having a small cross-dimension compared to the transverse width of the patterned beam produced by the system. The device also desirably includes a downstream scattering-contrast diaphragm defining an aperture having a larger cross dimension than that of the pinhole aperture. A photodiode or the like is downstream of the pinhole aperture and is used for detecting charged particles transmitted by the pinhole diaphragm. A patterned beam is scanned across the pinhole aperture, and charged particles not scattered during passage through the pinhole aperture propagate to the photodiode. The distribution of charged particle density is obtained from the photodiode signal, which can be fed back to components of the CPB microlithography system.

Abstract translation: 公开了带电粒子束（CPB）微光刻系统，其包括用于测量图案化束中的带电粒子密度分布的装置。 通过向CPB微光刻设备提供反馈，可以针对高质量曝光优化带电粒子密度的分布。 该装置的一个实施例包括一个针孔隔膜，其限定了与该系统产生的图案化梁的横向宽度相比具有小横截面的孔。 该装置还期望地包括限定具有比针孔的横截面尺寸更大的孔的下游散射对比度膜。 光电二极管等在针孔的下游，用于检测由针孔光阑传播的带电粒子。 图案化的束被扫过针孔，并且在通过针孔孔的通过期间不散射的带电粒子传播到光电二极管。 带电粒子密度的分布从光电二极管信号获得，可以反馈到CPB微光刻系统的组件。

公开(公告)号：US20010017355A1

公开(公告)日：2001-08-30

申请号：US09792357

申请日：2001-02-23

Inventor： Kazui Mizuno

IPC: H01J037/302

CPC classification number: H01J37/3026 ,  H01J2237/3175

Abstract: An electron beam lithography apparatus includes a control device in which, for each column stripe in each drawing time of multiple drawing, optional conditions of dividing a pattern to be drawn on the sample can be set; and a time obtained by dividing a total irradiation time by the number of total drawing times is set to an electron beam-irradiation time. Further, the control device controls a deflection device so as to deflect the electron beam in accordance with the set conditions of pattern-division and the set electron beam-irradiation time.

Abstract translation: 电子束光刻设备包括一个控制装置，其中，对于在多次绘图的每个绘制时间内的每个列条纹，可以设置对在样品上绘制的图案进行分割的可选条件; 并将通过将总照射时间除以总抽吸次数获得的时间设定为电子束照射时间。 此外，控制装置根据图案划分和设定电子束照射时间的设定条件来控制偏转装置以使电子束偏转。

公开(公告)号：US20040149935A1

公开(公告)日：2004-08-05

申请号：US10763175

申请日：2004-01-26

Applicant: Kabushiki Kaisha Toshiba

Inventor： Tetsuro Nakasugi

IPC: H01J037/302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G21K1/087 ,  H01J37/3174 ,  H01J2237/31776

Abstract: Two or more-staged masks are prepared for a charged beam generating source. One mask has first aperture sections having rectangular apertures arranged into a lattice form, and electrodes which deflects a beam at respective first aperture sections. The other mask has a second aperture section having basic figure apertures for shaping the beam which passes or passed through the first aperture sections. Layout data of a semiconductor apparatus are divided into sizes of the basic figures which take reduction in exposure into consideration so as to be classified according to the basic figures. The beam which is shaped into a form of an overlapped portion of the divided layouts and the classified basic figure is emitted onto a sample.

公开(公告)号：US20040061080A1

公开(公告)日：2004-04-01

申请号：US10672469

申请日：2003-09-26

Applicant: ADVANTEST CORPORATION ,  Hitachi, Ltd. ,  CANON KABUSHIKI KAISHA

Inventor： Shin-Ichi Hashimoto ,  Haruo Yoda ,  Masato Muraki

IPC: H01J037/302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/1477 ,  H01J37/3177 ,  H01J2237/1504

Abstract: An electron beam exposure apparatus for exposing a wafer by an electron beam, including: an electron beam generating section for generating the electron beam; a deflector for deflecting the electron beam; a deflection control section for outputting a deflection control signal for causing the deflector to deflect the electron beam; and a control signal storage section for storing a value of the deflection control signal output from the deflection control section. The control signal storage section and the deflector may be monolithically integrated on a semiconductor substrate.

Abstract translation: 一种用于通过电子束曝光晶片的电子束曝光装置，包括：用于产生电子束的电子束产生部分; 用于偏转电子束的偏转器; 偏转控制部分，用于输出用于使偏转器偏转电子束的偏转控制信号; 以及控制信号存储部分，用于存储从偏转控制部分输出的偏转控制信号的值。 控制信号存储部分和偏转器可以单片集成在半导体衬底上。

公开(公告)号：US20040021095A1

公开(公告)日：2004-02-05

申请号：US10354959

申请日：2003-01-31

Inventor： Yasunari Sohda ,  Yoshinori Nakayama ,  Osamu Kamimura ,  Masato Muraki ,  Masaki Takakuwa

IPC: H01J037/302

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J2237/043 ,  H01J2237/24405

Abstract: The present invention intends to improve the writing accuracy in an electron beam writing system using discrete multi beams in which the interval of the beams is larger than the size of the beams. In electron beam writing equipment which uses means generating multi electron beams; means on/off controlling each of the multi electron beams according to pattern data that should be written; and means deflecting the multi electron beams together, thereby performing writing on a wafer, one side of a unit writing area of the multi electron beams is larger than substantially twice the interval of the electron beams or substantially an integral multiple thereof.

Abstract translation: 本发明旨在提高使用离散多光束的电子束写入系统中的写入精度，其中光束的间隔大于光束的尺寸。 在使用产生多个电子束的装置的电子束写入设备中; 根据应写入的图形数据来开/关控制多个电子束的装置; 并且意味着将多个电子束偏转在一起，从而在晶片上进行写入，多个电子束的单位写入区域的一侧大于电子束的间隔的两倍或其基本上的整数倍。

公开(公告)号：US20030189181A1

公开(公告)日：2003-10-09

申请号：US10219769

申请日：2002-08-16

Inventor： Hiroya Ohta ,  Yasunari Sohda ,  Norio Saitou ,  Haruo Yoda ,  Yoshikiyo Yui ,  Shin?apos;ichi Hashimoto

IPC: H01J037/302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/304 ,  H01J37/3177

Abstract: The present invention provides a high-precision and high-speed electron beam exposure technique which corrects the position of each beam in a multi-beam exposure method without using a deflection array and a huge and high-precision driving circuit. In an electron beam exposure method for forming a desired pattern onto a specimen by independently controlling emission and scanning of a plurality of electron beams, a deviation between a pattern formed by each of the plurality of electron beams and the desired pattern is controlled by shifting the position of pattern data of the pattern formed by each of the plurality of electron beams.

Abstract translation: 本发明提供一种高精度和高速电子束曝光技术，其不使用偏转阵列和巨大且高精度的驱动电路来校正多光束曝光方法中的每个光束的位置。 在通过独立地控制多个电子束的发射和扫描来形成期望图案到电子束的电子束曝光方法中，由多个电子束中的每一个形成的图案与期望的图案之间的偏差通过使 由多个电子束中的每一个形成的图案的图案数据的位置。