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公开(公告)号：US20160326632A1
公开(公告)日：2016-11-10
申请号：US15147926
申请日：2016-05-06
申请人： safematic GmbH
发明人： Walter COLLEONI , Patrick CAPEDER , Christof GRAF
CPC分类号： C23C14/34 , C23C14/35 , H01J37/32449 , H01J37/32715 , H01J37/32935 , H01J37/3411 , H01J37/3435 , H01J37/3444 , H01J37/345 , H01J37/347 , H01J37/3476 , H01J37/3488
摘要： A sputter unit is introduced comprising a housing, a gas inlet, an interface for removable connecting the sputter unit to a vacuum chamber, a gas outlet arranged for supplying a process gas received via the gas inlet to the vacuum chamber, an interface for removable connecting the sputter unit to a base unit comprising a vacuum pump for generating a vacuum in the vacuum chamber, and a transformer arranged in the housing for increasing a supply voltage into an ionisation voltage for ionising the process gas supplied via the gas outlet to the vacuum chamber.
摘要翻译： 引入溅射单元，包括壳体，气体入口，用于将溅射单元可移除地连接到真空室的接口，布置成用于将经由气体入口接收的处理气体供应到真空室的气体出口，用于可移除连接的界面 所述溅射单元到包括用于在所述真空室中产生真空的真空泵的基本单元，以及布置在所述壳体中的变压器，用于将电源电压增加到电离电压，用于将经由所述气体出口供给的处理气体电离到所述真空室 。
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公开(公告)号：US09437403B2
公开(公告)日：2016-09-06
申请号：US14357285
申请日：2012-11-09
申请人： FHR ANLAGENBAU GMBH
发明人： Olaf Gawer , Sascha Kreher
CPC分类号： H01J37/3411 , H01J37/3405 , H01J37/3438 , H01J37/3444
摘要： An arrangement is provided for feeding in HF current for rotatable tubular cathodes in a vacuum chamber of a plasma coating system as well as a high frequency current source. Located inside the tubular cathode is a magnet arrangement that extends along said tubular cathode for generating a magnetic field. The arrangement enables a low loss infeed of HF current, so that a particularly homogeneous sputter removal from the tubular cathode is guaranteed. The HF current source is coupled to the tubular cathode inside the vacuum chamber by a capacitive infeed of HF current in the form of a coupling capacitor. The coupling capacitor includes a part of the surface of the tubular cathode and a metal plate or metal film that surrounds the tubular cathode, at least partially, at a specified distance.
摘要翻译： 提供了用于在等离子体涂覆系统的真空室中的可旋转管状阴极以及高频电流源中馈送HF电流的装置。 位于管状阴极内的是沿着所述管状阴极延伸以产生磁场的磁体布置。 该布置能够实现HF电流的低损耗进给，从而保证从管状阴极的特别均匀的溅射去除。 HF电流源通过耦合电容器形式的HF电流的电容性进料耦合到真空室内的管状阴极。 耦合电容器包括管状阴极的表面的一部分和至少部分地以特定距离围绕管状阴极的金属板或金属膜。
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公开(公告)号：US09422619B2
公开(公告)日：2016-08-23
申请号：US14296505
申请日：2014-06-05
发明人： Yasushi Yasumatsu
CPC分类号： C23C14/042 , C23C14/22 , C23C14/3407 , C23C14/50 , C23C16/042 , H01J37/32651 , H01J37/3411 , H01J37/3441
摘要： A processing apparatus includes a substrate holding portion, a shield arranged to surround a substrate, and a shield holding portion configured to hold the shield. The shield includes first magnets each having a magnetic pole of a first polarity facing the shield holding portion, and second magnets each having a magnetic pole of a second polarity facing the shield holding portion. The first magnets and the second magnets are arranged at positions symmetrical with respect to the center of the shield. The shield holding portion includes third magnets each having a magnetic pole of the first polarity facing the shield, and fourth magnets each having a magnetic pole of the second polarity facing the shield.
摘要翻译： 一种处理装置，包括：基板保持部，围绕基板的屏蔽，以及构成为保持屏蔽的屏蔽保持部。 屏蔽包括第一磁体，每个磁体具有面向屏蔽保持部分的第一极性的磁极，以及第二磁体，每个磁体具有面向屏蔽保持部分的第二极性的磁极。 第一磁体和第二磁体被布置在相对于屏蔽的中心对称的位置处。 屏蔽保持部分包括第三磁体，每个磁体都具有面向屏蔽的第一极性的磁极，第四磁体各自具有面向屏蔽的第二极性的磁极。
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公开(公告)号：US20160240355A1
公开(公告)日：2016-08-18
申请号：US15140362
申请日：2016-04-27
CPC分类号： H01J37/32825 , G11B5/3163 , H01J37/32816 , H01J37/3411 , H01J2237/334
摘要： A plasma sputtering apparatus according to one embodiment includes a chamber and a reservoir in fluidic communication with the chamber. The reservoir stores a vapor source therein, and is configured to release vapor at a predetermined rate. The vapor released by the reservoir is effective to diminish an etch rate of a first magnetic material, the vapor having a smaller effect on an etch rate of a second magnetic material that is different than the first magnetic material. The apparatus also includes a mount for a substrate and a plasma source.
摘要翻译： 根据一个实施例的等离子体溅射装置包括腔室和与腔室流体连通的容器。 储存器在其中存储蒸汽源，并且被配置为以预定速率释放蒸汽。 由储存器释放的蒸气有效地降低第一磁性材料的蚀刻速率，蒸气对不同于第一磁性材料的第二磁性材料的蚀刻速率具有较小的影响。 该装置还包括用于衬底和等离子体源的安装件。
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15.发明授权Substrate processing system having symmetric RF distribution and return paths 有权基板处理系统具有对称的RF分布和返回路径公开(公告)号：US09255322B2
公开(公告)日：2016-02-09
申请号：US13436776
申请日：2012-03-30
申请人： Donny Young , Alan Ritchie , Muhammad Rasheed , Keith A. Miller
发明人： Donny Young , Alan Ritchie , Muhammad Rasheed , Keith A. Miller
CPC分类号： C23C14/3407 , C23C14/35 , H01J37/32577 , H01J37/3405 , H01J37/3411 , H01J37/3414
摘要： A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter.
摘要翻译： 处理系统可以包括具有与其正交的中心轴的目标; 源分布板，其具有与所述靶的背面相对的目标面对侧，其中所述源分配板包括多个第一特征，使得沿着给定第一直径的第一径向RF分配路径的第一距离大约等于第二特征 沿着给定的第一直径的相对的第二径向RF分配路径的距离; 以及与所述源分配板的目标相对侧相对的并且具有围绕所述中心轴线设置并对应于所述多个第一特征的多个第二特征的接地板，其中沿着给定的第二部分的第一径向RF返回路径的第三距离 直径约等于沿着给定的第二直径的相对的第二径向RF返回路径的第四距离。
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16.发明申请公开(公告)号：US20150235818A1
公开(公告)日：2015-08-20
申请号：US14704197
申请日：2015-05-05
发明人： Gong JIN , Jiangping TU , Lingling LI , Gang WANG , Meina WANG
IPC分类号： H01J37/34
CPC分类号： H01J37/3417 , A61L31/084 , A61L31/088 , A61L2420/02 , A61L2420/08 , C23C14/025 , C23C14/0605 , C23C14/0611 , C23C14/0635 , C23C14/165 , C23C14/3464 , C23C14/3492 , C23C14/35 , C23C14/352 , C23C14/505 , C23C14/568 , H01J37/32633 , H01J37/3405 , H01J37/3411 , H01J37/3426 , H01J37/3429 , H01J37/3447 , Y10T428/265 , Y10T428/30
摘要： A magnetron sputtering coating device includes a deposition chamber, sputtering cathodes, a rotating stand within the deposition chamber, a support platform on the rotating stand, a first rotation system for driving the rotating stand to rotate around a central axis of the rotating stand, and a baffle fixed on the rotating stand. The sputtering cathodes are arranged around and perpendicular to the rotating stand.
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公开(公告)号：US20150206714A1
公开(公告)日：2015-07-23
申请号：US14676031
申请日：2015-04-01
CPC分类号： H01J37/3244 , C23C14/0063 , C23C14/0068 , H01J37/3405 , H01J37/3411 , H01J37/3441 , H01J37/3447 , H01J2237/3328
摘要： A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.
摘要翻译： 反应性溅射装置包括室，设置在室中的基板保持器，设置在室中并构造成保持目标的目标保持器，设置在室中的沉积屏蔽板，以在第二区域之间形成溅射空间， 目标保持架和基板支架，防止溅射粒子附着在室内壁;反应性气体引入管，被配置为将溅射空间引入反应气体;将惰性气体引入到惰性气体导入口 落在溅射空间内部和室内的空间，以及防止溅射颗粒从溅射中安装在靶保持体上的靶的溅射粒子附着在反应性气体导入管的导入口上的屏蔽部件。
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公开(公告)号：US20150167150A1
公开(公告)日：2015-06-18
申请号：US14628356
申请日：2015-02-23
发明人： Shoichi Doi , Tatsuya Nishiwaki
IPC分类号： C23C14/22 , H01J37/30 , G02F1/1337
CPC分类号： C23C14/221 , C23C14/042 , C23C14/0605 , C23C14/225 , C23C14/3442 , C23C14/46 , G02F1/133734 , G02F1/13378 , H01J37/3411 , H01J37/3426 , H01J2237/3146
摘要： A method for forming an alignment film for a liquid crystal on a substrate and an associated at least one structure. The substrate is moved in a first direction. A target is disposed on the first surface side of the substrate. The ion beam is propagated from an ion source toward the substrate and impinges on a sputtering surface of the target, which sputters a material of the target and results in sputtered particles of the material being emitted from the sputtering surface of the target and deposited on the first surface side of the substrate to form (i) a sputtering film on the first surface side of the substrate and (ii) an alignment film having an orientation and being disposed on the sputtering film and on the entire surface of the substrate. The alignment film aligns molecules of the liquid crystal in a predetermined direction.
摘要翻译： 一种在基板上形成液晶取向膜的方法及相关的至少一种结构。 基板沿第一方向移动。 靶设置在基板的第一表面侧。 离子束从离子源向衬底传播并撞击在靶的溅射表面上，溅射靶材的溅射表面，并导致材料的溅射颗粒从靶溅射表面发射并沉积在靶材上 在基板的第一表面侧形成（i）溅射膜，（ii）具有取向的取向膜，并设置在溅射膜上和基板的整个表面上。 取向膜将液晶的分子沿预定方向排列。
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公开(公告)号：US20150083332A1
公开(公告)日：2015-03-26
申请号：US14561785
申请日：2014-12-05
发明人： Akihiro KIKUCHI , Satoshi KAYAMORI , Shinya SHIMA , Yuichiro SAKAMOTO , Kimihiro HIGUCHI , Kaoru OOHASHI , Takehiro UEDA , Munehiro SHIBUYA , Tadashi GONDAI
CPC分类号： H01J37/32724 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32715 , H01J37/3411 , H01J2237/002 , H01J2237/0206 , H01J2237/334 , H01L21/67069
摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.
摘要翻译： 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理的基板的表面发生。
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公开(公告)号：US08916034B2
公开(公告)日：2014-12-23
申请号：US13059318
申请日：2009-08-25
申请人： Yuichi Setsuhara , Akinori Ebe , Jeon Geon Han
发明人： Yuichi Setsuhara , Akinori Ebe , Jeon Geon Han
CPC分类号： H01J37/3408 , C23C14/3407 , C23C14/358 , H01J37/321 , H01J37/3211 , H01J37/3411 , H01J37/3417
摘要： A thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system includes: a vacuum container; a target holder located inside the vacuum container; a target holder located inside the vacuum container; a substrate holder opposed to the target holder; a power source for applying a voltage between the target holder and the substrate holder; a magnetron-sputtering magnet provided behind the target holder, for generating a magnetic field having a component parallel to a target; and radio-frequency antennae for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target where the magnetic field generated by the magnetron-sputtering magnet has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate.
摘要翻译： 能够高速溅射工艺的薄膜形成溅射系统。 薄膜形成溅射系统包括：真空容器; 位于真空容器内的目标支架; 位于真空容器内的目标支架; 与靶保持器相对的衬底保持器; 用于在所述目标保持器和所述基板保持器之间施加电压的电源; 设置在目标支架后面的磁控溅射磁体，用于产生具有平行于目标的分量的磁场; 以及用于在由磁控溅射磁体产生的磁场具有等于或高于预定水平的强度的目标附近的空间内产生射频感应耦合等离子体的射频天线。 由射频天线产生的射频感应耦合等离子体促进电子向上述磁场的供给，从而可以高速率进行溅射处理。
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