Abstract:
Photoresist pattern trimming compositions are provided. The compositions comprise: a matrix polymer, an aromatic sulfonic acid and a solvent, wherein the aromatic sulfonic acid comprises one or more fluorinated alcohol group. Also provided are methods of trimming a photoresist pattern using the trimming compositions. The compositions and methods find particular applicability in the manufacture of semiconductor devices.
Abstract:
Fluorine-free photoacid generators and photoresist compositions containing fluorine-free photoacid generators are enabled as alternatives to PFOS/PFAS photoacid generator-containing photoresists. The photoacid generators are characterized by the presence of a fluorine-free aromatic sulfonate anionic component having one or more electron withdrawing groups. The photoacid generators preferably contain a fluorine-free onium cationic component, more preferably a sulfonium cationic component. The photoresist compositions preferably contain an acid sensitive imaging polymer having a lactone functionality. The compositions are especially useful for forming material patterns using 193 nm (ArF) imaging radiation.
Abstract:
A process for preparing amine salts of 4-nitrotoluene-2-sulfonic acid by sulfonation of nitrotoluene with oleum, subsequent dilution of the reaction mixture with water and extraction with lipophilic amines, wherein the acidic aqueous solution of the sulfonation product is partially neutralized with mineral bases. The compounds prepared according to the invention are particularly suitable for preparing dyes.
Abstract:
3,3'-diamino diphenylsulfones are prepared by catalytically reducing and dehalogenating, in the presence of a reduction catalyst and a dehydrohalogenation agent, a diphenylsulfone compound of the general formula ##STR1## in which X is a halogen atom and Y is hydrogen or a halogen atom.
Abstract:
A process is disclosed for converting aromatic thiols to the corresponding nitroso- or nitro-substituted compounds by treating the thiol compounds with an excess of nitric acid having a HNO3 concentration of 90 to 100 percent. Representative starting compounds are benzenethiols and pyridinethiols which, in addition to the thiol group, are substituted with one or more electronwith-drawing groups such, for example, as chloro, nitro or cyano, among others. The nitroso and nitro compounds produced during the reaction have utility as pesticides and are variously effective as herbicides and in the control of fungi and nematodes as well as of parasites infecting warmblooded animals.