知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

125 条记录 (耗时 0.02 秒)

    SIGNAL BOOSTING APPARATUS AND METHOD OF BOOSTING SIGNALS
    16.
    发明申请
    SIGNAL BOOSTING APPARATUS AND METHOD OF BOOSTING SIGNALS 审中-公开
    信号增强装置和信号增强方法

    公开(公告)号：US20140252510A1

    公开(公告)日：2014-09-11

    申请号：US14200735

    申请日：2014-03-07

    申请人： SenseTech Co., Ltd

    发明人： Mao-Chen LIU ,  Po-Wei LU ,  Wen-Chieh CHOU ,  Shu-Yi WENG ,  Chun-Chieh WANG

    IPC分类号： B81B7/02 ,  B81C1/00

    CPC分类号： B81B7/02 ,  B81B7/008 ,  B81B2207/012 ,  B81C1/00698

    摘要： A signal boosting apparatus and a method of boosting signals applied in the MEMS are disclosed. The signal boosting apparatus includes a substrate, an oxide layer, and a signal transmission layer. The substrate has a doped region. The doped region has a plurality of conductive carriers. These conductive carriers have the same polarity as an electronic signal. The oxide layer is located on the substrate, and the signal transmission layer is located on the oxide layer. The signal transmission layer can receive and boost the electronic signal.

    摘要翻译： 公开了一种信号升压装置和一种提高在MEMS中施加的信号的方法。 信号增强装置包括基板，氧化物层和信号传输层。 衬底具有掺杂区域。 掺杂区域具有多个导电载体。 这些导电载体具有与电子信号相同的极性。 氧化物层位于衬底上，信号传输层位于氧化物层上。 信号传输层可以接收和升高电子信号。

    MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) DEVICE AND METHOD FOR FABRICATING THE SAME
    17.
    发明申请
    MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    微电子机械系统（MEMS）装置及其制造方法

    公开(公告)号：US20130056841A1

    公开(公告)日：2013-03-07

    申请号：US13224297

    申请日：2011-09-01

    申请人： Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Jhyy-Cheng Liou

    发明人： Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Jhyy-Cheng Liou

    IPC分类号： H01L29/84 ,  H01L21/02

    CPC分类号： B81C1/00698 ,  B81C1/00682 ,  H01G5/18 ,  H04R19/005 ,  H04R19/04

    摘要： A MEMS device includes a substrate. The substrate has a plurality of through holes in the substrate within a diaphragm region and optionally an indent space from the second surface at the diaphragm region. A first dielectric structural layer is then disposed over the substrate from the first surface, wherein the first dielectric structural layer has a plurality of openings corresponding to the through holes, wherein each of the through holes remains exposed by the first dielectric structural layer. A second dielectric structural layer with a chamber is disposed over the first dielectric structural layer, wherein the chamber exposes the openings of the first dielectric structural layer and the through holes of the substrate to connect to the indent space. A MEMS diaphragm is embedded in the second dielectric structural layer above the chamber, wherein an air gap is formed between the substrate and the MEMS diaphragm.

    摘要翻译： MEMS器件包括衬底。 衬底在膜片区域内的衬底中具有多个通孔，并且可选地在隔膜区域处具有与第二表面相邻的凹陷空间。 然后，第一介电结构层从第一表面设置在衬底上，其中第一介电结构层具有对应于通孔的多个开口，其中每个通孔保持被第一介电结构层暴露。 具有腔室的第二电介质结构层设置在第一介电结构层上，其中腔室暴露第一介电结构层的开口和衬底的通孔以连接到凹陷空间。 MEMS隔膜嵌入在腔室上方的第二电介质结构层中，其中在衬底和MEMS隔膜之间形成气隙。

    Method for reducing harmonic distortion in comb drive devices
    18.
    发明授权
    Method for reducing harmonic distortion in comb drive devices 有权
    减少梳状驱动装置谐波失真的方法

    公开(公告)号：US07396476B2

    公开(公告)日：2008-07-08

    申请号：US11275575

    申请日：2006-01-17

    申请人： Jeffrey A. Ridley ,  James A. Neus

    发明人： Jeffrey A. Ridley ,  James A. Neus

    IPC分类号： C23F1/00

    CPC分类号： B81C1/00698 ,  B81B2201/0271 ,  B81B2201/033 ,  B81C2201/0132

    摘要： Methods of fabricating comb drive devices utilizing one or more sacrificial etch-buffers are disclosed. An illustrative fabrication method may include the steps of etching a pattern onto a wafer substrate defining one or more comb drive elements and sacrificial etch-buffers, liberating and removing one or more sacrificial etch-buffers prior to wafer bonding, bonding the etched wafer substrate to an underlying support substrate, and etching away the wafer substrate. In some embodiments, the sacrificial etch-buffers are removed after bonding the wafer to the support substrate. The sacrificial etch-buffers can be provided at one or more selective regions to provide greater uniformity in etch rate during etching. A comb drive device in accordance with an illustrative embodiment can include a number of interdigitated comb fingers each having a more uniform profile along their length and/or at their ends, producing less harmonic distortion during operation.

    摘要翻译： 公开了使用一个或多个牺牲蚀刻缓冲器制造梳状驱动装置的方法。 示例性的制造方法可以包括以下步骤：将图案蚀刻到限定一个或多个梳状驱动元件和牺牲蚀刻缓冲器的晶片衬底上，在晶片接合之前释放和去除一个或多个牺牲蚀刻缓冲器，将蚀刻的晶片衬底接合到 底层支撑衬底，并蚀刻掉晶片衬底。 在一些实施例中，在将晶片接合到支撑衬底之后去除牺牲蚀刻缓冲器。 可以在一个或多个选择性区域处提供牺牲蚀刻缓冲器，以在蚀刻期间提供更大的蚀刻速率均匀性。 根据说明性实施例的梳状驱动装置可以包括多个交叉指状梳，每个梳指在其长度和/或其端部具有更均匀的轮廓，在操作期间产生较少的谐波失真。