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公开(公告)号：US20220059578A1
公开(公告)日：2022-02-24
申请号：US16605417
申请日：2019-09-18
Inventor： Fei AI , Dewei SONG , Guoheng YIN
IPC: H01L27/12 , H01L29/786 , H01L29/66
Abstract: An array substrate and a method of manufacturing the same are provided. The array substrate includes a substrate, a plurality of thin film transistors disposed on the substrate, and a planarization layer covering the plurality of thin film transistors and filled a region defined by the plurality of thin film transistors and the substrate.
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公开(公告)号：US20210389623A1
公开(公告)日：2021-12-16
申请号：US17019369
申请日：2020-09-14
Inventor： Fei AI , Dewei SONG
IPC: G02F1/1339 , H01L27/12 , H01L29/786 , H01L29/66 , G02F1/1368 , G02F1/1335
Abstract: A display panel and a manufacturing method thereof are provided. The display panel includes: an array substrate with a first protrusion defined thereon; a color filter substrate disposed opposite to the array substrate; a supporting structure, wherein an end of the supporting structure is connected to a lateral side of the color filter substrate, another end of the supporting structure is connected to a lateral side of the array substrate, and the first protrusion is embedded into the supporting structure. The first protrusion is formed on a side of the array substrate near the color filter substrate. Therefore, when the supporting structure of the color filter substrate is aligned and attached to the array substrate, the first protrusion can be embedded into the supporting structure, thereby preventing the supporting structure from being moved. Thus, risk of alignment error is reduced, and abnormality of the display panel is prevented.
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公开(公告)号：US20240234577A1
公开(公告)日：2024-07-11
申请号：US17926189
申请日：2022-11-11
Inventor： Zhifu LI , Guanghui LIU , Chao DAI , Fei AI , Dewei SONG , Chengzhi LUO
IPC: H01L29/786 , H01L29/417 , H01L29/423
CPC classification number: H01L29/78642 , H01L29/41733 , H01L29/41741 , H01L29/42392
Abstract: A semiconductor device and an electronic device are provided. A through hole is formed in an insulating layer and located on a first active layer. A thin-film transistor layer includes a third active layer. At least part of the third active layer is located on a sidewall of the through hole. One side of the third active layer is connected to a first active layer, and the other side of the third active layer is connected to a second active layer, so that a channel length is reduced, short channel effect is reduced, on-state current is increased, and power consumption is reduced.
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公开(公告)号：US20240233433A9
公开(公告)日：2024-07-11
申请号：US17769396
申请日：2022-03-10
Inventor： Fan GONG , Fei AI , Jiyue SONG , Dewei SONG
IPC: G06V40/13 , H01L27/12 , H01L31/0216
CPC classification number: G06V40/1318 , H01L27/124 , H01L31/02164
Abstract: A fingerprint collection device and a display panel are provided. The fingerprint collection device includes: a base substrate, a driving circuit layer, a first passivation layer, a photodiode, a second passivation layer, and an electrode layer. A first electrode portion is electrically connected to the photodiode through a second via. A second electrode portion is electrically connected to a first signal trace and a second signal trace through a third via and a fourth via to form a bridge structure. Since the third via, the fourth via, and the second via are formed in same process, one process can be saved.
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公开(公告)号：US20240194684A1
公开(公告)日：2024-06-13
申请号：US17802166
申请日：2022-08-08
Inventor： Zhifu LI , Guanghui LIU , Fei AI , Dewei SONG
IPC: H01L27/12 , H01L29/786
CPC classification number: H01L27/1222 , H01L29/78633 , H01L29/78696
Abstract: A semiconductor device and an electronic device are provided. The semiconductor device includes an insulating substrate and a thin film transistor layer. The thin film transistor layer includes a first active layer and a first insulating layer disposed on the first active layer, and a convex portion is formed on the first insulating layer. The thin film transistor layer further includes a second active layer and a third active layer disposed on both sidewalls and an upper surface of the convex portion, one end of the first active layer is connected to the second active layer, and another end of the first active layer is connected to the third active layer.
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Patent Agency Ranking
公开(公告)号：US20240135742A1
公开(公告)日：2024-04-25
申请号：US17769396
申请日：2022-03-10
Inventor： Fan GONG , Fei AI , Jiyue SONG , Dewei SONG
IPC: G06V40/13 , H01L27/12 , H01L31/0216
CPC classification number: G06V40/1318 , H01L27/124 , H01L31/02164
Abstract: A fingerprint collection device and a display panel are provided. The fingerprint collection device includes: a base substrate, a driving circuit layer, a first passivation layer, a photodiode, a second passivation layer, and an electrode layer. A first electrode portion is electrically connected to the photodiode through a second via. A second electrode portion is electrically connected to a first signal trace and a second signal trace through a third via and a fourth via to form a bridge structure. Since the third via, the fourth via, and the second via are formed in same process, one process can be saved.
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公开(公告)号：US20240038793A1
公开(公告)日：2024-02-01
申请号：US17278342
申请日：2020-12-31
Inventor： Fei AI , Fan GONG , Jiyue SONG , Dewei SONG , Shiyu LONG
IPC: H01L27/146
CPC classification number: H01L27/14612 , H01L27/14649 , H01L27/14683
Abstract: An array substrate and a manufacturing method thereof are provided. The array substrate includes a thin film transistor layer including a first thin film transistor and an infrared detection element disposed on a first side of the thin film transistor layer. The infrared detection element includes a first electrode, a light-absorbing layer, and a second electrode sequentially stacked, wherein the infrared detection element is electrically connected to the first thin film transistor, and wherein a material of the light-absorbing layer is microcrystalline silicon. A thickness and band gap of the microcrystalline silicon simultaneously fulfill a purpose of infrared detection.
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公开(公告)号：US20200279869A1
公开(公告)日：2020-09-03
申请号：US16475684
申请日：2019-04-30
Inventor： Fei AI , Dewei SONG
IPC: H01L27/12 , H01L21/768 , H01L29/786 , H01L29/66
Abstract: A method of manufacturing an array substrate and an array substrate are provided. The method of manufacturing the array substrate includes forming a first metal layer on a substrate, wherein the first metal layer includes a plurality of first metal lines and a plurality of intermittent second metal lines, forming an interlayer dielectric insulating layer on the substrate and the first metal layer, and forming an intermittent data line on the interlayer dielectric insulating layer and the first metal layer, wherein the intermittent data line contacts the two ends of each of the intermittent second metal lines through the via holes.
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公开(公告)号：US20250081755A1
公开(公告)日：2025-03-06
申请号：US18561180
申请日：2023-06-30
Inventor： Fei AI , Dewei SONG , Chengzhi LUO
IPC: H10K59/123 , H10K59/121 , H10K59/124
Abstract: A display panel and an electronic terminal are provided, including a substrate and a first thin film transistor (TFT) disposed on the substrate. The first TFT includes a first active portion, and a first source and a first drain which are arranged on two ends of the first active portion and electrically connected to the two ends. The display panel also includes a pixel electrode layer arranged on a first source-drain portion and electrically connected to the first drain. A material of the first drain includes a transparent conductive material.
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公开(公告)号：US20250081522A1
公开(公告)日：2025-03-06
申请号：US18560932
申请日：2023-06-29
Inventor： Zhifu LI , Guanghui LIU , Fei AI , Dewei SONG , Chengzhi LUO
IPC: H01L29/786 , H01L29/10
Abstract: The present application provides a thin film transistor and an electronic device thereof. An active layer of the thin film transistor includes: a first active layer, a channel layer and a second active layer that are stacked, the first active layer includes a first doped portion and a second doped portion, the first doped portion is connected to the channel layer and the second doped portion, and a concentration of dopant ions in the first doped portion is less than a concentration of dopant ions in the second doped portion. The leakage current is reduced, and the mobility in the “channel region” of the thin film transistor is improved.
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