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公开(公告)号：US10957346B2
公开(公告)日：2021-03-23
申请号：US16833650
申请日：2020-03-29
Applicant: Western Digital Technologies, Inc.
Inventor： Gonçalo Marcos Baião De Albuquerque , Yunfei Ding , Alexander Goncharov , Kuok San Ho , Daniele Mauri , Goran Mihajlovic , Suping Song , Petrus Antonius Van Der Heijden
IPC: G11B11/105 , G11B5/127 , G11B5/31 , G11B5/60 , G11B5/11 , G11B5/39 , G11B5/455 , G11B5/02 , G11B5/00
Abstract: Disclosed herein are magnetic recording devices and methods of using them. A magnetic recording device comprises a main pole extending to an air-bearing surface (ABS), a trailing shield extending to the ABS, a write-field-enhancing structure disposed between and coupled to the main pole and the trailing shield at the ABS, a write coil configured to magnetize the main pole, a write current control circuit coupled to the write coil and configured to apply a write current to the write coil, wherein the write current comprises a write pulse, and a bias current control circuit coupled to the write-field-enhancing structure and configured to apply a bias current to the write-field-enhancing structure, wherein the bias current comprises a driving pulse offset in time from the write pulse by a delay, wherein the delay substantially coincides with an expected magnetization switch-time lag of a free layer of the write-field-enhancing structure.
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12.发明授权公开(公告)号：US11514933B1
公开(公告)日：2022-11-29
申请号：US17398714
申请日：2021-08-10
Applicant: Western Digital Technologies, Inc.
Inventor： Chen-Jung Chien , Ming Mao , Daniele Mauri
IPC: G11B5/39
Abstract: The present disclosure generally relates to read heads having dual free layer (DFL) sensors. The read head has a sensor disposed between two shields. The sensor is a DFL sensor and has a surface at the media facing surface (MFS). Recessed from the DFL sensor, and from the MFS, is a rear hard bias (RHB) structure. The RHB structure is disposed between the shields as well. In between the DFL sensor and the RHB structure is insulating material. The RHB is disposed on the insulating material. The RHB includes a RHB seed layer as well as a RHB bulk layer. The RHB bulk layer includes a first bulk layer and a second bulk layer, the first bulk layer having a different density relative to the second bulk layer.
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公开(公告)号：US11493573B2
公开(公告)日：2022-11-08
申请号：US16718346
申请日：2019-12-18
Applicant: Western Digital Technologies, Inc.
Inventor： Chih-Ching Hu , Yung-Hung Wang , Ann Lorraine Carvajal , Ming Mao , Chen-Jung Chien , Yuankai Zheng , Ronghui Zhou , Dujiang Wan , Carlos Corona , Daniele Mauri , Ming Jiang
Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.
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公开(公告)号：US11212447B1
公开(公告)日：2021-12-28
申请号：US16915742
申请日：2020-06-29
Applicant: Western Digital Technologies, Inc.
Inventor： Quang Le , Rajeev Nagabhirava , Kuok San Ho , Zhigang Bai , Zhanjie Li , Xiaoyong Liu , Daniele Mauri
Abstract: Aspects of the present disclosure generally relate to optical devices and related methods that facilitate tilt in camera systems, such as tilt of a lens. In one example, an optical device includes a lens, an image sensor disposed below the lens, a plurality of magnets disposed about the lens, and a plurality of: (1) vertical coil structures coiled in one or more vertical planes and (2) horizontal coil structures coiled in one or more horizontal planes. When power is applied, the coil structures can generate magnetic fields that, in the presence of the magnets, cause relative movement of the coil structures and associated structures. The plurality of vertical coil structures are configured to horizontally move the lens. The plurality of horizontal coil structures are configured to tilt the lens when differing electrical power is applied to at least two of the plurality of horizontal coil structures.
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公开(公告)号：US11169228B2
公开(公告)日：2021-11-09
申请号：US16730784
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Yung-Hung Wang , Daniele Mauri , Ming Mao , Chen-jung Chien , Yuankai Zheng , Chih-Ching Hu , Carlos Corona , Matthew Stevenson , Ming Jiang
Abstract: The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of tunneling magnetoresistance (TMR) structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures each have an additional non-TMR resistor as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.
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Patent Agency Ranking
公开(公告)号：US11169227B2
公开(公告)日：2021-11-09
申请号：US16730777
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Chih-Ching Hu , Yung-Hung Wang , Yuankai Zheng , Chen-jung Chien , Ming Mao , Daniele Mauri , Ming Jiang
Abstract: The present disclosure generally relates to a Wheatstone bridge that includes a plurality of resistors comprising dual free layer (DFL) TMR structures. The DFL TMR structures include one or more hard bias structures on the side of DLF. Additionally, one or more soft bias structures may also be present on a side of the DFL. Two resistors will have identical hard bias material while two other resistors will have hard bias material that is identical to each other, yet different when compared to the first two resistors. The hard bias materials will provide opposite magnetizations that will provide opposite bias fields that result in two different magnetoresistance responses for the DFL TMR.
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17.发明授权公开(公告)号：US10388305B1
公开(公告)日：2019-08-20
申请号：US15919025
申请日：2018-03-12
Applicant: Western Digital Technologies, Inc.
Inventor： Gonçalo Marcos Baião De Albuquerque , Yunfei Ding , Alexander Goncharov , Kuok San Ho , Daniele Mauri , Goran Mihajlovic , Suping Song , Petrus Antonius Van Der Heijden
Abstract: Disclosed herein are apparatuses and methods for writing to a magnetic medium, and data storage devices comprising such apparatuses and methods. An apparatus comprises a main pole, a trailing shield, a write-field-enhancing structure, a write coil, a write current control circuit configured to supply a write current to the write coil to record a bit to a magnetic medium, and a driving current control circuit configured to supply a driving current to the write-field-enhancing structure, wherein the driving current comprises a driving pulse. A method of writing to a magnetic medium comprises supplying a write current to a write coil of a magnetic write head, and supplying a driving current to a free layer disposed in a write gap between a main pole and a trailing shield of the magnetic write head, wherein the driving current comprises an AC component.
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公开(公告)号：US11557317B2
公开(公告)日：2023-01-17
申请号：US17448167
申请日：2021-09-20
Applicant: Western Digital Technologies, Inc.
Inventor： Xiaoyong Liu , Goncalo Baiao De Albuquerque , Daniele Mauri , Yukimasa Okada
IPC: G11B5/39
Abstract: The present disclosure generally relates to a read head of a data storage device. The read head includes a read sensor sandwiched between two shields. The shields can have different materials as well as a different number of layers. Furthermore the shields can be fabricated by different processes and have different heights and thicknesses. The ratio of the thickness to the height for the shields are substantially identical to ensure that the saturation field are substantially identical and balanced.
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公开(公告)号：US11514935B1
公开(公告)日：2022-11-29
申请号：US17500572
申请日：2021-10-13
Applicant: Western Digital Technologies, Inc.
Inventor： Xiaoyong Liu , Ji Li , Goncalo Marcos Baião De Albuquerque , Daniele Mauri , Yukimasa Okada
Abstract: Aspects of the present disclosure generally relate to magnetic recording heads of magnetic recording devices. A read head includes a first reader, an insulating separation layer, and a second reader disposed above the insulating separation layer. The second reader includes a magnetic seed layer and a cap layer. The second reader includes a first upper free layer disposed between the magnetic seed layer and the cap layer, and a second upper free layer disposed between the first upper free layer and the cap layer. The second reader includes a barrier layer. In one implementation the second reader includes an antiferromagnetic (AFM) layer disposed between the magnetic seed layer and the insulating separation layer to pin the magnetic seed layer.
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公开(公告)号：US11385306B2
公开(公告)日：2022-07-12
申请号：US16728507
申请日：2019-12-27
Applicant: Western Digital Technologies, Inc.
Inventor： Daniele Mauri , Lei Wang , Yuankai Zheng , Christian Kaiser , Chih-Ching Hu , Ming Mao , Ming Jiang , Petrus Antonius Van Der Heijden
Abstract: Embodiments of the present disclosure generally relate to a sensor of magnetic tunnel junctions (MTJs) with shape anisotropy. In one embodiment, a tunnel magnetoresistive (TMR) based magnetic sensor in a Wheatstone configuration includes at least one magnetic tunnel junctions (MTJ). The MTJ includes a free layer having a first edge and a second edge. The free layer has a thickness of about 100 Å or more. The free layer has a width and a height with a width-to-height aspect ratio of about 4:1 or more. The MTJ has a first hard bias element positioned proximate the first edge of the free layer and a second hard bias element positioned proximate the second edge of the free layer.
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