Spinning reticle scanning projection lithography exposure system and
method
    11.
    发明授权
    Spinning reticle scanning projection lithography exposure system and method 失效
    旋转掩模扫描投影光刻曝光系统及方法

    公开(公告)号:US5434424A

    公开(公告)日:1995-07-18

    申请号:US310176

    申请日:1994-09-21

    Abstract: A reticle disk with an annular pattern area is used in a reduction projection lithography system in place of a reticle with a rectilinear pattern layout. The reticle disk is rotated on a continuous basis during patterning of a substrate, and the patterning-beam emanating from the annular pattern area is scanned over the substrate using an X-Y stage. The imaging beam, which is preferably an electron-beam, may be scanned across the annular pattern area in a radial direction to allow patterning a plurality of subfields.

    Abstract translation: 在还原投影光刻系统中使用具有环形图案区域的标线盘,代替具有直线图案布局的掩模版。 在图案化基板期间,光栅盘在连续的基础上旋转,并且使用X-Y平台将从环形图案区域发出的图案化光束在基板上扫描。 成像光束(其优选为电子束)可以沿着径向方向扫描环形图案区域,以允许图案化多个子场。

    Telecentric sub-field deflection with vail
    12.
    发明授权
    Telecentric sub-field deflection with vail 失效
    远心子场偏转与vail

    公开(公告)号:US4859856A

    公开(公告)日:1989-08-22

    申请号:US142035

    申请日:1988-01-11

    CPC classification number: H01J37/141 H01J37/1474

    Abstract: A two staqge, electron beam projection system includes a target, a source of an electron beam and means for projecting an electron beam towards the target with its upper surface defining a target plane. A magnetic projection lens has a principal plane and a back focal plane located between said means for projecting and the target. The means for projecting provides an electron beam directed towards the target. First stage means provides deflection of the beam from area to area within a field. Second stage means provides for deflection of the beam for providing deflection of the beam within an area within a field. The beam crossing the back focal plane produces a telecentric condition of the beam in the image plane with the beam substantially normal to the target plane from the principal plane to the target plane. The magnetic projection lens includes a magnetic structure providing for magnetic compensation positioned within the bore of the projection lens, which produces a compensating magnetic field substantially proportional to the first derivative of the axial magnetic projection field. The axial magnetic projection field provides substantially a zero first derivative of the axial magnetic projection field in the vicinity of the target. The projection system projects on the target plane from the projection system as deflected by the upper and lower stages, at all times maintaining the telecentric condition of the electron beam at the target plane throughout the entire range of deflection of the beam, assuring minimum errors due to target height variations.

    Optimized curvilinear variable axis lens doublet for charged particle beam projection system
    13.
    发明授权
    Optimized curvilinear variable axis lens doublet for charged particle beam projection system 失效
    用于带电粒子束投影系统的优化曲线可变轴透镜双峰

    公开(公告)号:US06617585B1

    公开(公告)日:2003-09-09

    申请号:US09577475

    申请日:2000-05-24

    Applicant: Werner Stickel

    Inventor: Werner Stickel

    Abstract: This is a method for designing an optimized charged particle beam projection system. Specify lens configuration and first order optics. Calculate lens excitations. Configure the lens system, providing lens field distributions, beam landing angle, and imaging ray/axis cross-over. Provide an input deflector configuration. Solve a linear equation set, and thereby provide a curvilinear axis and associated deflection field distributions. Calculate the third order aberration coefficients yielding a list of up to 54 aberration coefficients. Provide an input of dynamic correctors. Calculate excitations to eliminate quadratic aberrations in deflection. Calculate third and fifth order aberrations, providing image blur and distortion vs. deflection, best focal plane, and depth of focus. Determine whether the current result is better than the previous result. If YES then change the axial location input to the solve linear equation set. If NO, test whether the current result is acceptable. If NO, provide a deflector configuration. If YES, test whether the deflection current is larger. If YES, change the input for the axial location of the deflectors to solve the linear equation set again. If NO then END the process.

    Abstract translation: 这是设计优化的带电粒子束投影系统的方法。 指定镜头配置和一阶光学。 计算镜头激发。 配置镜头系统,提供镜头场分布,光束着陆角度和成像光线/轴交叉。 提供输入偏转器配置。 求解线性方程组,从而提供曲线轴和相关的偏转场分布。 计算三阶像差系数,得到最多54个像差系数的列表。 提供动态校正器的输入。 计算激发以消除偏转中的二次像差。 计算第三和第五阶像差,提供图像模糊和失真与偏转,最佳焦平面和焦深。 确定当前结果是否比以前的结果更好。 如果是,则将轴向位置输入改为求解线性方程组。 如果否,则检查当前结果是否可以接受。 如果否,请提供偏转器配置。 如果是,则检查偏转电流是否较大。 如果是,则更改偏转器的轴向位置的输入,以再次求解线性方程组。 如果否,则END过程。

    Symmetric blanking for high stability in electron beam exposure systems
    14.
    发明授权
    Symmetric blanking for high stability in electron beam exposure systems 失效
    电子束曝光系统中高稳定性的对称消隐

    公开(公告)号:US06483117B1

    公开(公告)日:2002-11-19

    申请号:US09335043

    申请日:1999-06-16

    CPC classification number: G21K1/087 H01J37/045 H01J2237/3175

    Abstract: An electronic beam lithography tool providing dimensional stability. The tool includes three or more deflection plates above an aperture diaphragm which allows the beam to be deflected away from an aperture and along a two-dimensional locus on the aperture diaphragm which is approximately symmetrical around the aperture therein. By doing so, the aperture diaphragm is symmetrically heated by the power of the charged particle beam and the geometry of the charged particle beam device is stabilized against variance in geometry of the device to a very small tolerance.

    Abstract translation: 一种提供尺寸稳定性的电子束光刻工具。 该工具包括在孔径光阑上方的三个或更多个偏转板,其允许光束从孔径偏转并且沿着孔径光阑上围绕其孔径近似对称的二维轨迹偏转。 通过这样做,孔径光阑被带电粒子束的功率对称地加热,并且带电粒子束装置的几何形状被稳定,以防止装置的几何形状的变化到非常小的公差。

    Image position and lens field control in electron beam systems
    15.
    发明授权
    Image position and lens field control in electron beam systems 失效
    电子束系统中的图像位置和透镜场控制

    公开(公告)号:US06420713B1

    公开(公告)日:2002-07-16

    申请号:US09301000

    申请日:1999-04-28

    CPC classification number: H01J37/141 H01J37/3007 H01J2237/3175

    Abstract: A charged particle beam system with a source of charged particles produces a beam directed along a path. A given electromagnetic lens is located along the path. The given electromagnetic lens is adapted to produce a first field directed with a first orientation adapted for affecting a beam of charged particles directed along the path through the lens. A bucking electromagnetic lens is juxtaposed with the given electromagnetic lens adapted to produce a bucking field directed with a bucking orientation adapted for affecting the beam of charged particles directed along the path. The bucking field has an orientation opposing the first field. A fringe field from the bucking electromagnetic lens produces a nulling field to compensate for aberrations and/or beam disturbances.

    Abstract translation: 具有带电粒子源的带电粒子束系统产生沿着路径指向的光束。 给定的电磁透镜沿着路径定位。 给定的电磁透镜适于产生用适于影响沿着穿过透镜的路径引导的带电粒子束的第一取向引导的第一场。 屈曲电磁透镜与给定的电磁透镜并置,其适于产生用于影响沿着路径引导的带电粒子束的抵抗定向的屈曲场。 屈曲场具有与第一场相反的方向。 来自屈曲电磁透镜的边缘场产生归零场以补偿像差和/或光束干扰。

    Blanking system for electron beam projection system
    16.
    发明授权
    Blanking system for electron beam projection system 有权
    电子束投影系统消隐系统

    公开(公告)号:US6023067A

    公开(公告)日:2000-02-08

    申请号:US138592

    申请日:1998-08-22

    CPC classification number: H01J37/3007 H01J37/045 H01J2237/3175

    Abstract: A charged particle beam projection system includes a source of charged particles and a first doublet of condenser lenses with a first symmetry plane through which the beam is directed, located lower on the column. A trim aperture element is located at the first symmetry plane of the first doublet wherein the trim aperture serves as a first blanking aperture. Below the trim aperture there is a shaping aperture. Next is a second doublet of condenser lenses with a second symmetry plane. A third aperture, which is located at the symmetry plane of the second doublet serves as another blanking aperture.

    Abstract translation: 带电粒子束投影系统包括带电粒子源和具有第一对称平面的聚光透镜的第一双透镜,光束通过该第一对称平面定位在柱下方。 修剪孔径元件位于第一双峰的第一对称平面处,其中修剪孔用作第一消隐孔。 在修剪孔下方有一个成形孔。 接下来是具有第二对称平面的聚光透镜的第二双透镜。 位于第二双峰的对称平面处的第三孔用作另一个消隐孔。

    Curvilinear variable axis lens correction with crossed coils
    17.
    发明授权
    Curvilinear variable axis lens correction with crossed coils 失效
    带交叉线圈的曲线可变轴透镜校正

    公开(公告)号:US5708274A

    公开(公告)日:1998-01-13

    申请号:US769084

    申请日:1996-12-18

    Abstract: A charged particle lens has an axis that is shifted to follow the central ray of the beam as it is deflected through the lens creating, in effect, a variable curvilinear optical axis for the lens and introducing aberrations having depending on the object size and the distance off the lens symmetry axis. These aberrations are corrected by a set of coil pairs tilted with respect to the system axis, which generate compensating aberrations of the same type.

    Abstract translation: 带电粒子透镜具有在被偏转穿过透镜时沿着光束的中心光线移动的轴,实际上产生用于透镜的可变曲线光轴并引入具有取决于物体尺寸和距离的像差 离开镜头对称轴。 这些像差由相对于系统轴倾斜的一组线圈对来校正,这产生相同类型的补偿像差。

    Electron beam projection lithography system (EBPS)
    18.
    发明授权
    Electron beam projection lithography system (EBPS) 失效
    电子束投影光刻系统(EBPS)

    公开(公告)号:US6069684A

    公开(公告)日:2000-05-30

    申请号:US17722

    申请日:1998-02-04

    Abstract: Numerous largely unpredictable criticalities of operating parameters arise in electron beam projection lithography systems to maintain throughput comparable to optical projection lithography systems as minimum feature size is reduced below one-half micron and resolution requirements are increased. Using an electron beam projection lithography system having a high emittance electron source, variable axis lenses, curvilinear beam trajectory and constant reticle and/or target motion in a dual scanning mode wherein the target and/or wafer is constantly moved orthogonally to the direction of beam scan, high throughput is obtained consistent with 0.1 .mu.m feature size ground rules utilizing a column length of greater than 400 mm, a beam current of between about 4 and 35 .mu.A, a beam energy of between about 75 and 175 kV, a sub-field size between about 0.1 and 0.5 mm at the target at an optical reduction factor between about 3:1 and 5:1, a numerical aperture greater than 2 mrad and preferably between about 3 and 8 mrad and a scan length between about 20 mm and 55 mm. Reticle and target speed preferably differ by about the optical reduction factor.

    Abstract translation: 在电子束投影光刻系统中出现了大量不可预测的操作参数临界值,以保持与光学投影光刻系统相当的吞吐量,因为最小特征尺寸减小到小于0.5微米,并且分辨率要求增加。 使用具有高发射电子源,可变轴透镜,曲线光束轨迹和恒定掩模版和/或目标运动的双扫描模式的电子束投影光刻系统,其中目标和/或晶片与光束的方向不断地正交移动 扫描时,利用柱长度大于400mm,束电流在约4至35μA之间的光束电流,约75至175kV的光束能量,子像素 在大约3:1到5:1之间的光学还原因子的情况下,目标处的场强在大约0.1和0.5mm之间,数值孔径大于2mrad,优选地在大约3到8mrad之间,扫描长度在大约20mm 和55毫米。 掩模版和目标速度优选地相差约光学折射系数。

    Illumination deflection system for E-beam projection
    19.
    发明授权
    Illumination deflection system for E-beam projection 失效
    用于电子束投影的照明偏转系统

    公开(公告)号:US6005250A

    公开(公告)日:1999-12-21

    申请号:US138595

    申请日:1998-08-22

    CPC classification number: H01J37/3007 H01J2237/04928 H01J2237/3175

    Abstract: An electron beam projection system comprises a source of an electron beam, a first doublet of condenser lenses with a first symmetry plane, a first aperture comprising a trim aperture located at the first symmetry plane of the first doublet also serving as a first blanking aperture. A second aperture comprises a shaping aperture located below the trim aperture. A second doublet of condenser lenses with a second symmetry plane is located below the second aperture, the second doublet having a symmetry plane. A third aperture is located at the symmetry plane of the second doublet wherein the third aperture comprises another blanking aperture. There are first blanking plates between the first condenser lens and the trim aperture, and second electrostatic alignment plates between the trim aperture and the second aperture. The second doublet comprises a pair of illuminator lenses including deflectors coaxial therewith and located inside the radius of the lenses and shielding rings located along the inner surfaces of the lenses, and correctors located coaxial with the deflectors and inside or outside of the radii thereof including stigmators, focus coils and a hexapole.

    Abstract translation: 电子束投影系统包括电子束源,具有第一对称平面的聚光透镜的第一双重透镜,第一孔包括位于第一双峰的第一对称平面处的微调孔,其也用作第一消隐孔。 第二孔包括位于修剪孔下方的成形孔。 具有第二对称平面的第二个具有第二对称平面的聚光透镜位于第二孔的下方,第二双峰具有对称平面。 第三孔位于第二双层的对称平面处,其中第三孔包括另一消隐孔。 在第一聚光透镜和调节孔之间存在第一遮挡板,以及在修剪孔和第二孔之间的第二静电对准板。 第二双层包括一对照明器透镜,其包括与其同轴的偏转器,位于透镜的半径内并且沿着透镜的内表面定位的屏蔽环,以及与偏转器同轴并且其半径的内部或外部的校正器包括标示器 ,聚焦线圈和六极。

    Projection reticle transmission control for coulomb interaction analysis
    20.
    发明授权
    Projection reticle transmission control for coulomb interaction analysis 失效
    用于库仑相互作用分析的投影掩模传输控制

    公开(公告)号:US5751004A

    公开(公告)日:1998-05-12

    申请号:US789675

    申请日:1997-01-24

    CPC classification number: H01J37/00 H01J2237/30433 H01J2237/3175

    Abstract: A method and system for studying the effect of electron-electron interaction in an electron beam writing system. First and second test reticles are provided that have different open areas. An electron beam is directed through the first test reticle to form a first pattern on a test surface, and the electron beam is then directed through the second test reticle to form a second pattern on a test surface. Because the open areas of the test reticles differ, the current of the electron beam is different when that beam passes through the first test reticle than when that beam passes through the second test reticle. The resolution of the first formed pattern is compared with the resolution of the second formed pattern to assess the effect of the different currents of the electron beam on the resolutions of the formed patterns.

    Abstract translation: 一种用于研究电子束写入系统中电子 - 电子相互作用效应的方法和系统。 提供具有不同开放面积的第一和第二测试标线。 电子束被引导通过第一测试掩模版以在测试表面上形成第一图案,然后电子束被引导通过第二测试光罩以在测试表面上形成第二图案。 由于测试光罩的开放区域不同,当光束通过第一测试光罩时,电子束的电流不同于当光束通过第二测试光罩时。 将第一形成图案的分辨率与第二形成图案的分辨率进行比较,以评估电子束的不同电流对形成的图案的分辨率的影响。

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