Abstract:
A reticle disk with an annular pattern area is used in a reduction projection lithography system in place of a reticle with a rectilinear pattern layout. The reticle disk is rotated on a continuous basis during patterning of a substrate, and the patterning-beam emanating from the annular pattern area is scanned over the substrate using an X-Y stage. The imaging beam, which is preferably an electron-beam, may be scanned across the annular pattern area in a radial direction to allow patterning a plurality of subfields.
Abstract:
A two staqge, electron beam projection system includes a target, a source of an electron beam and means for projecting an electron beam towards the target with its upper surface defining a target plane. A magnetic projection lens has a principal plane and a back focal plane located between said means for projecting and the target. The means for projecting provides an electron beam directed towards the target. First stage means provides deflection of the beam from area to area within a field. Second stage means provides for deflection of the beam for providing deflection of the beam within an area within a field. The beam crossing the back focal plane produces a telecentric condition of the beam in the image plane with the beam substantially normal to the target plane from the principal plane to the target plane. The magnetic projection lens includes a magnetic structure providing for magnetic compensation positioned within the bore of the projection lens, which produces a compensating magnetic field substantially proportional to the first derivative of the axial magnetic projection field. The axial magnetic projection field provides substantially a zero first derivative of the axial magnetic projection field in the vicinity of the target. The projection system projects on the target plane from the projection system as deflected by the upper and lower stages, at all times maintaining the telecentric condition of the electron beam at the target plane throughout the entire range of deflection of the beam, assuring minimum errors due to target height variations.
Abstract:
This is a method for designing an optimized charged particle beam projection system. Specify lens configuration and first order optics. Calculate lens excitations. Configure the lens system, providing lens field distributions, beam landing angle, and imaging ray/axis cross-over. Provide an input deflector configuration. Solve a linear equation set, and thereby provide a curvilinear axis and associated deflection field distributions. Calculate the third order aberration coefficients yielding a list of up to 54 aberration coefficients. Provide an input of dynamic correctors. Calculate excitations to eliminate quadratic aberrations in deflection. Calculate third and fifth order aberrations, providing image blur and distortion vs. deflection, best focal plane, and depth of focus. Determine whether the current result is better than the previous result. If YES then change the axial location input to the solve linear equation set. If NO, test whether the current result is acceptable. If NO, provide a deflector configuration. If YES, test whether the deflection current is larger. If YES, change the input for the axial location of the deflectors to solve the linear equation set again. If NO then END the process.
Abstract:
An electronic beam lithography tool providing dimensional stability. The tool includes three or more deflection plates above an aperture diaphragm which allows the beam to be deflected away from an aperture and along a two-dimensional locus on the aperture diaphragm which is approximately symmetrical around the aperture therein. By doing so, the aperture diaphragm is symmetrically heated by the power of the charged particle beam and the geometry of the charged particle beam device is stabilized against variance in geometry of the device to a very small tolerance.
Abstract:
A charged particle beam system with a source of charged particles produces a beam directed along a path. A given electromagnetic lens is located along the path. The given electromagnetic lens is adapted to produce a first field directed with a first orientation adapted for affecting a beam of charged particles directed along the path through the lens. A bucking electromagnetic lens is juxtaposed with the given electromagnetic lens adapted to produce a bucking field directed with a bucking orientation adapted for affecting the beam of charged particles directed along the path. The bucking field has an orientation opposing the first field. A fringe field from the bucking electromagnetic lens produces a nulling field to compensate for aberrations and/or beam disturbances.
Abstract:
A charged particle beam projection system includes a source of charged particles and a first doublet of condenser lenses with a first symmetry plane through which the beam is directed, located lower on the column. A trim aperture element is located at the first symmetry plane of the first doublet wherein the trim aperture serves as a first blanking aperture. Below the trim aperture there is a shaping aperture. Next is a second doublet of condenser lenses with a second symmetry plane. A third aperture, which is located at the symmetry plane of the second doublet serves as another blanking aperture.
Abstract:
A charged particle lens has an axis that is shifted to follow the central ray of the beam as it is deflected through the lens creating, in effect, a variable curvilinear optical axis for the lens and introducing aberrations having depending on the object size and the distance off the lens symmetry axis. These aberrations are corrected by a set of coil pairs tilted with respect to the system axis, which generate compensating aberrations of the same type.
Abstract:
Numerous largely unpredictable criticalities of operating parameters arise in electron beam projection lithography systems to maintain throughput comparable to optical projection lithography systems as minimum feature size is reduced below one-half micron and resolution requirements are increased. Using an electron beam projection lithography system having a high emittance electron source, variable axis lenses, curvilinear beam trajectory and constant reticle and/or target motion in a dual scanning mode wherein the target and/or wafer is constantly moved orthogonally to the direction of beam scan, high throughput is obtained consistent with 0.1 .mu.m feature size ground rules utilizing a column length of greater than 400 mm, a beam current of between about 4 and 35 .mu.A, a beam energy of between about 75 and 175 kV, a sub-field size between about 0.1 and 0.5 mm at the target at an optical reduction factor between about 3:1 and 5:1, a numerical aperture greater than 2 mrad and preferably between about 3 and 8 mrad and a scan length between about 20 mm and 55 mm. Reticle and target speed preferably differ by about the optical reduction factor.
Abstract:
An electron beam projection system comprises a source of an electron beam, a first doublet of condenser lenses with a first symmetry plane, a first aperture comprising a trim aperture located at the first symmetry plane of the first doublet also serving as a first blanking aperture. A second aperture comprises a shaping aperture located below the trim aperture. A second doublet of condenser lenses with a second symmetry plane is located below the second aperture, the second doublet having a symmetry plane. A third aperture is located at the symmetry plane of the second doublet wherein the third aperture comprises another blanking aperture. There are first blanking plates between the first condenser lens and the trim aperture, and second electrostatic alignment plates between the trim aperture and the second aperture. The second doublet comprises a pair of illuminator lenses including deflectors coaxial therewith and located inside the radius of the lenses and shielding rings located along the inner surfaces of the lenses, and correctors located coaxial with the deflectors and inside or outside of the radii thereof including stigmators, focus coils and a hexapole.
Abstract:
A method and system for studying the effect of electron-electron interaction in an electron beam writing system. First and second test reticles are provided that have different open areas. An electron beam is directed through the first test reticle to form a first pattern on a test surface, and the electron beam is then directed through the second test reticle to form a second pattern on a test surface. Because the open areas of the test reticles differ, the current of the electron beam is different when that beam passes through the first test reticle than when that beam passes through the second test reticle. The resolution of the first formed pattern is compared with the resolution of the second formed pattern to assess the effect of the different currents of the electron beam on the resolutions of the formed patterns.