公开(公告)号：US5227887A

公开(公告)日：1993-07-13

申请号：US811366

申请日：1991-12-20

申请人： Masaji Dohi ,  Kenji Awamoto ,  Kazuya Kubo ,  Yuichiro Ito

发明人： Masaji Dohi ,  Kenji Awamoto ,  Kazuya Kubo ,  Yuichiro Ito

IPC分类号： H01L27/146 ,  H04N5/33 ,  H04N5/335 ,  H04N5/341 ,  H04N5/355 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374

CPC分类号： H04N3/1512 ,  H01L27/14643 ,  H04N3/1593

摘要： An image sensing device uses photodiodes arranged in a matrix. Each photodiode is connected to one of p serially-coupled input gate and transfer gate combinations, were p is an integer greater than or equal to 2. Channel terminals of the p transfer gates are commonly-coupled to a serially-coupled storage gate and output switch combination. The serially-coupled storage gate and output switch combination and its associated p input gate and transfer gate combinations can be repeatedly provided in rows and columns, and addressed so that pixels determined by the photodiodes can be serially output from the image sensing device. Among other advantages, by using serially-coupled input gate and transfer gate combinations, the area provided for a storage gate can be increased so that the sensitivity, dynamic range and/or signal-to-noise ratio is increased relative to conventional devices.

公开(公告)号：US10263251B2

公开(公告)日：2019-04-16

申请号：US15459871

申请日：2017-03-15

申请人： Tomohiro Ueno ,  Kazuya Kubo ,  Hiroshi Kawano ,  Toshio Takahashi ,  EXERGY POWER SYSTEMS, INC.

发明人： Tomohiro Ueno ,  Kazuya Kubo ,  Hiroshi Kawano ,  Toshio Takahashi ,  Kaduo Tsutsumi

IPC分类号： H01M4/00 ,  H01M4/38 ,  B22F9/04 ,  C22C19/03 ,  C22F1/10 ,  H01M4/04 ,  H01M4/52 ,  H01M10/26 ,  H01M10/34 ,  H01M4/02

摘要： A battery negative electrode includes a hydrogen storage alloy as a negative electrode active material, wherein the hydrogen storage alloy has a mean volume diameter within a range from 4 μm to 12 μm, and is disposed to be capable of being in contact with hydrogen in a hydrogen containing part in which hydrogen is contained.

公开(公告)号：US20150013958A1

公开(公告)日：2015-01-15

申请号：US14375893

申请日：2013-01-17

申请人： Kazuya Kubo

发明人： Kazuya Kubo

IPC分类号： F24F11/00 ,  F24D19/10 ,  F24D15/04

CPC分类号： F24F11/30 ,  F24D15/04 ,  F24D19/1087 ,  F24F11/64 ,  F24F11/70 ,  F24F11/77 ,  F24F2110/10 ,  F24F2110/12 ,  F24F2120/10 ,  F24F2140/50 ,  F24F2140/60 ,  Y02B30/12 ,  Y02B30/746

摘要： A controller sets a target setting temperature for an air-conditioning space, compares a value obtained by subtracting an outdoor temperature detected by an outdoor temperature sensor from the target setting temperature, with a first threshold related to the value, compares a value obtained by subtracting the outdoor temperature from an indoor temperature detected by an indoor temperature sensor, with a second threshold related to the value, compares a value obtained by subtracting a heat load in the air-conditioning space from a cooling capacity, with a third threshold related to the value, and controls operation of a heat pump type air-conditioning device and a ventilating device on the basis of these comparison results. The first threshold, the second threshold, and the third threshold are set in accordance with the number of people detected by a human detection sensor.

摘要翻译： 控制器设定空调空间的目标设定温度，将从室内温度传感器检测到的室外温度减去的目标值与目标设定温度相比较的值与与该值相关的第一阈值进行比较，将通过减去 从室内温度传感器检测到的室内温度的室外温度与与该值相关的第二阈值将从空调空间中减去热负荷所得的值与制冷量相比较，将与第 价值，并根据这些比较结果控制热泵式空调装置和通风装置的运转。 根据人检测传感器检测到的人数来设定第一阈值，第二阈值和第三阈值。

公开(公告)号：US20090269275A1

公开(公告)日：2009-10-29

申请号：US12067787

申请日：2006-09-11

申请人： Kazuya Kubo ,  Toshiki Kabutomori ,  Soumei Oonuki ,  Hironobu Arashima ,  Kunihiko Hashi ,  Hideaki Ito

发明人： Kazuya Kubo ,  Toshiki Kabutomori ,  Soumei Oonuki ,  Hironobu Arashima ,  Kunihiko Hashi ,  Hideaki Ito

IPC分类号： C01B3/02

CPC分类号： H01M4/383 ,  B22F9/04 ,  B22F2998/10 ,  C22C1/00 ,  C22C1/0491 ,  C22C30/00 ,  C22F1/18 ,  H01M8/04216 ,  H01M8/065 ,  B22F9/06 ,  B22F1/0085 ,  B22F9/023

摘要： The invention intends to provide a hydrogen storage alloy that can absorb and release hydrogen effectively at room temperature and shows excellent hydrogen storage amount and effective hydrogen transfer amount and furthermore shows excellent endurance.A pulverized hydrogen storage alloy powder is heated at 600° C. or more and 1200° C. or less for 10 min to 30 hr to apply strain relief annealing. A particle diameter of the hydrogen storage alloy powder is desirably 10 μm or less and the hydrogen storage alloy is desirably mainly composed of a BCC phase. Since the initial strain ahead of the hydrogenation is removed, a solid solution region of hydrogen is largely reduced and an initial hydrogen storage amount and an effective hydrogen transfer amount are increased. Owing to the pulverization, the strains are largely reduced from accumulating and propagating, the strains at the hydrogen storage are largely reduced from generating, an absorption plateau is largely increased, in addition thereto, the deterioration rate due to repetition of hydrogen storage and release can be largely improved.

摘要翻译： 本发明提供一种能够在室温下有效吸收和释放氢的储氢合金，显示出优异的储氢量和有效的氢转移量，并且还显示出优异的耐久性。 将粉碎的储氢合金粉末在600℃以上1200℃以下加热10分钟〜30小时，进行应变消除退火。 储氢合金粉末的粒径优选为10μm以下，希望主要由BCC相组成。 由于氢化之前的初始应变被去除，氢的固溶区域大大降低，并且初始储氢量和有效氢转移量增加。 由于粉碎，菌株在积累和繁殖中大大减少，储氢时的菌株大量减少，吸收平台大大增加，除此之外，由于重复储氢释放而导致的劣化率 大大改善。

公开(公告)号：US6143609A

公开(公告)日：2000-11-07

申请号：US824476

申请日：1996-12-02

申请人： Kazuo Sato ,  Kenji Ueda ,  Michio Morita ,  Fumihiko Noro ,  Kyoko Miyamoto ,  Hideaki Onishi ,  Kazuo Umeda ,  Kazuya Kubo

发明人： Kazuo Sato ,  Kenji Ueda ,  Michio Morita ,  Fumihiko Noro ,  Kyoko Miyamoto ,  Hideaki Onishi ,  Kazuo Umeda ,  Kazuya Kubo

IPC分类号： H01L21/336 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7883

摘要： A floating gate type semiconductor memory and method of manufacture are described including an erasing gate electrode in which a tunneling region can be formed easily and high reliability can be kept. An active region isolated by element isolation insulating films is formed on a semiconductor substrate. A gate insulating film and a floating gate electrode are sequentially formed on the active region. A control gate electrode is formed above the floating gate electrode with a silicon oxide film disposed therebetween. A tunneling insulating film is formed only on the side wall of the floating gate electrode. Then, an erasing gate electrode is formed so as to cover the tunneling insulating film.

摘要翻译： 描述了浮栅型半导体存储器及其制造方法，其特征在于包括能够容易地形成隧道区域的擦除栅极电极，并且可以保持高的可靠性。 在半导体衬底上形成由元件隔离绝缘膜隔离的有源区。 在有源区上依次形成栅极绝缘膜和浮栅电极。 在浮置栅电极的上方形成有控制栅电极，其间配置有氧化硅膜。 隧道绝缘膜只形成在浮栅电极的侧壁上。 然后，形成擦除栅电极以覆盖隧道绝缘膜。

公开(公告)号：US5838039A

公开(公告)日：1998-11-17

申请号：US677651

申请日：1996-07-08

申请人： Kazuo Sato ,  Kenji Ueda ,  Michio Morita ,  Fumihiko Noro ,  Kyoko Miyamoto ,  Hideaki Onishi ,  Kazuo Umeda ,  Kazuya Kubo

发明人： Kazuo Sato ,  Kenji Ueda ,  Michio Morita ,  Fumihiko Noro ,  Kyoko Miyamoto ,  Hideaki Onishi ,  Kazuo Umeda ,  Kazuya Kubo

IPC分类号： H01L21/336 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  H01L29/78 ,  H01L21/265

CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7883

摘要： A floating gate type semiconductor memory and method of manufacture are described including an erasing gate electrode in which a tunneling region can be formed easily and high reliability can be kept. An active region isolated by element isolation insulating films is formed on a semiconductor substrate. A gate insulating film and a floating gate electrode are sequentially formed on the active region. A control gate electrode is formed above the floating gate electrode with a silicon oxide film disposed therebetween. A tunneling insulating firm is formed only on the side wall of the floating gate electrode. Then, an erasing gate electrode is formed so as to cover the tunneling insulating film.

摘要翻译： 描述了浮栅型半导体存储器及其制造方法，其特征在于包括能够容易地形成隧道区域的擦除栅极电极，并且可以保持高的可靠性。 在半导体衬底上形成由元件隔离绝缘膜隔离的有源区。 在有源区上依次形成栅极绝缘膜和浮栅电极。 在浮置栅电极的上方形成有控制栅电极，其间配置有氧化硅膜。 仅在浮栅电极的侧壁上形成隧道绝缘固体。 然后，形成擦除栅电极以覆盖隧道绝缘膜。