公开(公告)号：US10522400B2

公开(公告)日：2019-12-31

申请号：US15216853

申请日：2016-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Alexander Kalnitsky ,  Yi-Hsien Chang ,  Chun-Ren Cheng ,  Jui-Cheng Huang ,  Shih-Fen Huang ,  Tung-Tsun Chen ,  Ching-Hui Lin

IPC: H01L21/76 ,  H01L21/768 ,  H01L23/522 ,  H01L29/786 ,  G01N27/414 ,  H01L23/34 ,  H01L27/12

Abstract: A biosensor with a heater embedded therein is provided. A semiconductor substrate comprises a source region and a drain region. The heater is under the semiconductor substrate. A sensing well is over the semiconductor substrate, laterally between the source region and the drain region. A sensing layer lines the sensing well. A method for manufacturing the biosensor is also provided.

公开(公告)号：US10393695B2

公开(公告)日：2019-08-27

申请号：US16165748

申请日：2018-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Shao Liu ,  Jui-Cheng Huang ,  Tung-Tsun Chen

IPC: H01L21/00 ,  G01N27/414 ,  H01L23/34 ,  H01L27/085 ,  H01L27/16 ,  H01L27/02

Abstract: A method of manufacturing an integrated circuit device includes providing a substrate comprising a semiconductor active layer, and forming source/drain regions, temperature sensors, and heating elements either in the semiconductor active layer or on the front side of the semiconductor active layer. The semiconductor active layer has channel regions between adjacent source/drain regions, and each of the heating elements is aligned over at least a portion of a corresponding temperature sensor. The method also includes forming a metal interconnect structure over the front side of the semiconductor active layer and exposing the channel regions from the back side of the semiconductor active layer substrate. A fluid gate dielectric layer is formed over the exposed channel regions.

公开(公告)号：US10101292B2

公开(公告)日：2018-10-16

申请号：US15053906

申请日：2016-02-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tung-Tsun Chen ,  Chia-Hua Chu ,  Jui-Cheng Huang ,  Chun-Wen Cheng ,  Cheng-Hsiang Hsieh

IPC: G01N19/00 ,  G01N27/22

Abstract: A micro-electro mechanical system (MEMS) humidity sensor includes a first substrate, a second substrate and a sensing structure. The second substrate is substantially parallel to the first substrate. The sensing structure is between the first substrate and the second substrate, and bonded to a portion of the first substrate and a portion of the second substrate, in which the second substrate includes a conductive layer facing the sensing structure, and a first space between the first substrate and the sensing structure is communicated with or isolated from outside, and a second space between the conductive layer and the sensing structure is communicated with an atmosphere, and the sensing structure, the second space and the conductive layer constitute a capacitor configured to measure permittivity of the atmosphere, and humidity of the atmosphere is derived from the permittivity of the atmosphere, pressure of the atmosphere and temperature.

公开(公告)号：US08994464B2

公开(公告)日：2015-03-31

申请号：US13647468

申请日：2012-10-09

Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.

Inventor： Tung-Tsun Chen ,  Jui-Cheng Huang

IPC: H03B5/30 ,  H03G3/30

CPC classification number: H03B5/30 ,  H03F2200/36 ,  H03G3/3036

Abstract: An amplifier and oscillator system includes a MEMS resonator and a two stage amplifier topology. The MEMS resonator is configured to generate a resonator signal. The two-stage amplifier topology is configured to amplify the resonator signal with a selected trans-impedance gain. Additionally, the two stage amplifier topology yields a feedback resistance that provides the selected trans-impedance gain.

Abstract translation: 放大器和振荡器系统包括MEMS谐振器和两级放大器拓扑。 MEMS谐振器被配置为产生谐振器信号。 两级放大器拓扑被配置为以选定的跨阻增益放大谐振器信号。 另外，两级放大器拓扑产生提供所选择的跨阻抗增益的反馈电阻。

公开(公告)号：US11860120B2

公开(公告)日：2024-01-02

申请号：US17007973

申请日：2020-08-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tung-Tsun Chen ,  Yi-Hsing Hsiao ,  Jui-Cheng Huang ,  Yu-Jie Huang

IPC: G01N27/414 ,  G01N33/569 ,  H01L21/762

CPC classification number: G01N27/4148 ,  G01N27/4145 ,  G01N33/56966 ,  H01L21/76251

Abstract: An IC includes a source region and a drain region in a semiconductor layer. A channel region is between the source region and the drain region. A sensing well is on a back surface of the semiconductor layer and over the channel region. An interconnect structure is on a front surface of the semiconductor layer opposite the back surface of the semiconductor layer. A biosensing film lines the sensing well and contacts a bottom surface of the sensing well that is defined by the semiconductor layer. A coating of selective binding agent is over the biosensing film and configured to bind with a cardiac cell.

公开(公告)号：US11320395B2

公开(公告)日：2022-05-03

申请号：US16900989

申请日：2020-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui Lin ,  Chun-Ren Cheng ,  Jui-Cheng Huang ,  Shih-Fen Huang ,  Tung-Tsun Chen ,  Yu-Jie Huang ,  Fu-Chun Huang

IPC: G01N27/414 ,  H01L23/31 ,  H01L23/522 ,  H01L23/64 ,  H01L29/786 ,  H01L21/8234 ,  H01L23/29

Abstract: An integrated circuit device includes a device layer, an interconnect structure, a conductive layer, a passivation layer and a bioFET. The device layer has a first side and a second side and include source/drain regions and a channel region between the source/drain regions. The interconnect structure is disposed at the first side of the device layer. The conductive layer is disposed at the second side of the device layer. The passivation layer is continuously disposed on the conductive layer and the channel region and exposes a portion of the conductive layer. The bioFET includes the source/drain regions, the channel region and a portion of the passivation layer on the channel region.

公开(公告)号：US20210389273A1

公开(公告)日：2021-12-16

申请号：US16900989

申请日：2020-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui Lin ,  Chun-Ren Cheng ,  Jui-Cheng Huang ,  Shih-Fen Huang ,  Tung-Tsun Chen ,  Yu-Jie Huang ,  Fu-Chun Huang

IPC: G01N27/414 ,  H01L23/31 ,  H01L23/522 ,  H01L23/29 ,  H01L23/64 ,  H01L29/786 ,  H01L21/8234

Abstract: An integrated circuit device includes a device layer, an interconnect structure, a conductive layer, a passivation layer and a bioFET. The device layer has a first side and a second side and include source/drain regions and a channel region between the source/drain regions. The interconnect structure is disposed at the first side of the device layer. The conductive layer is disposed at the second side of the device layer. The passivation layer is continuously disposed on the conductive layer and the channel region and exposes a portion of the conductive layer. The bioFET includes the source/drain regions, the channel region and a portion of the passivation layer on the channel region.

公开(公告)号：US10852271B2

公开(公告)日：2020-12-01

申请号：US15378794

申请日：2016-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Tsun Chen ,  Jui-Cheng Huang ,  Kun-Lung Chen ,  Cheng-Hsiang Hsieh

IPC: G01N27/414 ,  H01L27/12

Abstract: An on-chip heater in a concentric rings configuration having non-uniform spacing between heating elements provides improved radial temperature uniformity and low power consumption compared to circular or square heating elements. On-chip heaters are suitable for integration and use with on-chip sensors that require tight temperature control.

公开(公告)号：US20140097902A1

公开(公告)日：2014-04-10

申请号：US13647468

申请日：2012-10-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tung-Tsun Chen ,  Jui-Cheng Huang

IPC: H03G3/00

CPC classification number: H03B5/30 ,  H03F2200/36 ,  H03G3/3036

Abstract: An amplifier and oscillator system includes a MEMS resonator and a two stage amplifier topology. The MEMS resonator is configured to generate a resonator signal. The two-stage amplifier topology is configured to amplify the resonator signal with a selected trans-impedance gain. Additionally, the two stage amplifier topology yields a feedback resistance that provides the selected trans-impedance gain.

Abstract translation: 放大器和振荡器系统包括MEMS谐振器和两级放大器拓扑。 MEMS谐振器被配置为产生谐振器信号。 两级放大器拓扑被配置为以选定的跨阻增益放大谐振器信号。 另外，两级放大器拓扑产生提供所选择的跨阻抗增益的反馈电阻。

公开(公告)号：US11293897B2

公开(公告)日：2022-04-05

申请号：US16413865

申请日：2019-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Katherine H. Chiang ,  Jui-Cheng Huang ,  Ke-Wei Su ,  Tung-Tsun Chen ,  Wei Lee ,  Pei-Wen Liu

IPC: G01N27/414 ,  G01N33/543 ,  G01N27/02

Abstract: Various embodiments of the present application are directed towards an ion-sensitive field-effect transistor for enhanced sensitivity. In some embodiments, a substrate comprises a pair of first source/drain regions and a pair of second source/drain regions. Further, a first gate electrode and a second gate electrode underlie the substrate. The first gate electrode is laterally between the first source/drain regions, and the second gate electrode is laterally between the second source/drain regions. An interconnect structure underlies the substrate and defines conductive paths electrically shorting the second source/drain regions and the second gate electrode together. A passivation layer is over the substrate and defines a first well and a second well. The first and second wells respectively overlie the first and second gate electrodes, and a sensing layer lines the substrate in the first and second wells. In some embodiments, sensing probes are in the first well, but not the second well.