Layout modification method for exposure manufacturing process

    公开(公告)号:US10366973B2

    公开(公告)日:2019-07-30

    申请号:US15797842

    申请日:2017-10-30

    Abstract: A layout modification method for fabricating an integrated circuit is provided. The layout modification method includes calculating uniformity of critical dimension of a patterned layer with a layout for an exposure manufacturing process to produce a semiconductor device. The patterned layer is divided into a first portion and a second portion which is adjacent to the first portion, and a width of the second portion equals to a penumbra size of the exposure manufacturing process. The layout modification method further includes retrieving an adjusting parameter for modifying the layout of the semiconductor device; determining a compensation amount based on the adjusting parameter and the uniformity of critical dimension; and compensating the critical dimension of the second portion of the patterned layer by utilizing the compensation amount to generate a modified layout.

    System and Method for Extreme Ultraviolet Source Control

    公开(公告)号:US20190166680A1

    公开(公告)日:2019-05-30

    申请号:US15905951

    申请日:2018-02-27

    Abstract: An EUV radiation source module includes a target droplet generator configured to generate target droplets; a first laser source configured to generate first laser pulses that heat the target droplets to produce target plumes; a second laser source configured to generate second laser pulses that heat the target plumes to produce plasma emitting EUV radiation; third and fourth laser sources configured to generate first and second laser beams, respectively, that are directed onto a travel path of the target plumes, wherein the first and second laser beams are substantially parallel; and a monitor configured to receive the first and second laser beams reflected by the target plumes.

    Lithography system and method
    15.
    发明授权

    公开(公告)号:US11675280B2

    公开(公告)日:2023-06-13

    申请号:US17459357

    申请日:2021-08-27

    CPC classification number: G03F9/7019

    Abstract: A system is disclosed. The system includes a cleaning device and a scanner device. The cleaning device is configured to clean a mask. The scanner device is coupled to the cleaning device and is configured to receive the mask, a reference image and a real-time image that is captured at the mask. The reference image includes at least one first mark image having a plurality of mapping marks on the mask. The real-time image includes at least one second mark image having the plurality of mapping marks on the mask. The scanner device is configured to map the at least one second mark image in the real-time image with the at least one first image in the reference image, when a lithography exposing process is performed. A method is also disclosed herein.

    Method and apparatus for lithography in semiconductor fabrication

    公开(公告)号:US11121018B2

    公开(公告)日:2021-09-14

    申请号:US16926935

    申请日:2020-07-13

    Abstract: A reticle holding tool is provided. The reticle holding tool includes a housing, a reticle chuck, and a gas delivery assembly. The housing includes an opening, a top housing member, and a lateral housing member extending from the top housing member and terminating at a lower edge which is located on a predetermined plane. The reticle chuck is positioned in the housing and has an effective surface configured to secure a reticle. The effective surface is located between the predetermined plane and the top housing member. The reticle chuck is movable between two boundary lines that are perpendicular to the effective surface. A width of the opening is greater than a distance between the two boundary lines. The gas delivery assembly is positioned within the housing and configured to supply gas into the housing.

    Lithography system and method
    18.
    发明授权

    公开(公告)号:US11106146B2

    公开(公告)日:2021-08-31

    申请号:US16901506

    申请日:2020-06-15

    Abstract: A system is disclosed. The system includes a cleaning device and a scanner device. The cleaning device is configured to clean a mask. The scanner device is coupled to the cleaning device and is configured to receive the mask, a reference image and a real-time image that is captured at the mask. The reference image includes at least one first mark image having a plurality of mapping marks on the mask. The real-time image includes at least one second mark image having the plurality of mapping marks on the mask. The scanner device is configured to map the at least one second mark image in the real-time image with the at least one first image in the reference image, when a lithography exposing process is performed. A method is also disclosed herein.

Patent Agency Ranking