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公开(公告)号：US10204867B1
公开(公告)日：2019-02-12
申请号：US15692151
申请日：2017-08-31
发明人： Long-Yi Chen , Jia-Hong Chu , Hsin-Chin Lin , Hsiang-Yu Su , Yun-Heng Tseng , Kai-Hsiung Chen , Yu-Ching Wang , Po-Chung Cheng , Kuei-Shun Chen , Chi-Kang CHang
IPC分类号： H01L23/544 , H01L21/66 , G03F7/20
摘要： A metrology target of a semiconductor device is provided. The metrology target includes a substrate including first and second layers. The first layer includes a first grating, a second grating, and a first dummy structure. The first dummy structure is at least formed between the first grating and the second grating. The second layer is formed over the first layer and includes a third grating and a fourth grating. The first, second, third and fourth gratings are formed based on the first spatial period. The third grating and fourth grating are placed to overlap the first grating and second grating, respectively. The first grating and the third grating are formed with a first positional offset which is along a first direction. The second grating and the fourth grating are formed with a second positional offset which is along a second direction which is opposite to the first direction.
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公开(公告)号：US10734325B2
公开(公告)日：2020-08-04
申请号：US16662970
申请日：2019-10-24
发明人： Long-Yi Chen , Jia-Hong Chu , Chi-Wen Lai , Chia-Ching Liang , Kai-Hsiung Chen , Yu-Ching Wang , Po-Chung Cheng , Hsin-Chin Lin , Meng-Wei Chen , Kuei-Shun Chen
IPC分类号： H01L23/544 , H01L21/67 , H01L21/66 , H01L21/033 , G03F9/00 , G03F7/20 , H01L21/768
摘要： A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The method includes forming a layer over the first overlay grating. The method includes forming a second overlay grating over the layer. The second overlay grating has a third strip portion and a fourth strip portion, the third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other, there is a second distance between a third sidewall of the third strip portion and a fourth sidewall of the fourth strip portion, the third sidewall faces away from the fourth strip portion, the fourth sidewall faces the third strip portion, the first distance is substantially equal to the second distance, and the first trench extends across the third strip portion and the fourth strip portion.
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公开(公告)号：US10461037B2
公开(公告)日：2019-10-29
申请号：US15797953
申请日：2017-10-30
发明人： Long-Yi Chen , Jia-Hong Chu , Chi-Wen Lai , Chia-Ching Liang , Kai-Hsiung Chen , Yu-Ching Wang , Po-Chung Cheng , Hsin-Chin Lin , Meng-Wei Chen , Kuei-Shun Chen
IPC分类号： H01L23/544 , H01L21/768 , H01L21/67 , H01L21/66 , H01L21/033 , G03F9/00 , G03F7/20
摘要： A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The first overlay grating has a first strip portion and a second strip portion. The method includes forming a first layer over the first overlay grating. The first layer has a first trench elongated in a second elongated axis, the second elongated axis is substantially perpendicular to the first elongated axis, and the first trench extends across the first strip portion and the second strip portion. The method includes forming a second overlay grating over the first layer. The second overlay grating has a third strip portion and a fourth strip portion. The third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other.
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