公开(公告)号：US10861701B2

公开(公告)日：2020-12-08

申请号：US14754427

申请日：2015-06-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jia-Ming Lin ,  Shiu-Ko Jangjian ,  Chun-Che Lin

IPC: H01L29/423 ,  H01L29/40 ,  H01L21/285 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L21/28 ,  H01L21/768

Abstract: A semiconductor device includes a substrate, at least one layer, a metal adhesive, and a metal structure. The layer is disposed on the substrate. The layer has an opening, and the opening has a bottom surface and at least one sidewall. The metal adhesive is disposed on the bottom surface of the opening while leaving at least a portion of the sidewall of the opening exposed. The metal structure is disposed in the opening and on the metal adhesive.

公开(公告)号：US10854713B2

公开(公告)日：2020-12-01

申请号：US15865072

申请日：2018-01-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jia-Ming Lin ,  Shiu-Ko Jangjian ,  Chun-Che Lin ,  Ying-Lang Wang ,  Wei-Ken Lin ,  Chuan-Pu Liu

IPC: H01L21/3105 ,  H01L21/314 ,  H01L21/324 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L21/02 ,  H01L21/3065 ,  H01L27/12 ,  H01L21/84

Abstract: A method includes forming a flowable dielectric layer in a trench of a substrate; curing the flowable dielectric layer; and annealing the cured flowable dielectric layer to form an insulation structure and a liner layer. The insulation structure is formed in the trench, the liner layer is formed between the insulation structure and the substrate, and the liner layer includes nitrogen.

公开(公告)号：US09478660B2

公开(公告)日：2016-10-25

申请号：US14677405

申请日：2015-04-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

Inventor： Shiu-Ko Jangjian ,  Chi-Cherng Jeng ,  Chih-Nan Wu ,  Chun-Che Lin ,  Ting-Chun Wang

IPC: H01L29/00 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/7851 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/0649 ,  H01L29/161 ,  H01L29/20 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A fin field device structure and method for forming the same are provided. The FinFET device structure includes a substrate and a fin structure extending from the substrate. The FinFET device structure also includes an isolation structure formed on the substrate. The fin structure has a top portion and a bottom portion, and the bottom portion is embedded in the isolation structure. The FinFET device structure further includes a protection layer formed on the top portion of the fin structure. An interface is between the protection layer and the top portion of the fin structure, and the interface has a roughness in a range from about 0.1 nm to about 2.0 nm.

Abstract translation: 提供了一种翅片场设备结构及其形成方法。 FinFET器件结构包括从衬底延伸的衬底和鳍结构。 FinFET器件结构还包括形成在衬底上的隔离结构。 翅片结构具有顶部和底部，并且底部嵌入隔离结构中。 FinFET器件结构还包括形成在鳍结构的顶部上的保护层。 界面处于保护层和翅片结构的顶部之间，并且界面的粗糙度在约0.1nm至约2.0nm的范围内。