公开(公告)号：US10438948B2

公开(公告)日：2019-10-08

申请号：US15064647

申请日：2016-03-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chen-Han Wang ,  Chun-Hsiung Lin

IPC: H01L21/32 ,  H01L27/088 ,  H01L29/417 ,  H01L27/092 ,  H01L21/8234 ,  H01L21/8238

Abstract: A semiconductor device having a first region and a second region is provided. The first region has a first protruding structure and a second protruding structure. The second region has a third protruding structure and a fourth protruding structure. First, second, third, and fourth epi-layers are formed on the first, second, third, and fourth protruding structures, respectively. The first and second epi-layers are covered with a first photoresist layer while leaving the third and fourth epi-layers exposed. A dielectric layer is formed over the first photoresist layer and over the third and fourth epi-layers. A portion of the dielectric layer is covered with a second photoresist layer. The portion of the dielectric layer is formed over the third and fourth epi-layers. Portions of the dielectric layer not protected by the first and second photoresist layers are etched. The first and second photoresist layers are removed.

公开(公告)号：US20220223686A1

公开(公告)日：2022-07-14

申请号：US17712234

申请日：2022-04-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shuen-Shin Liang ,  Chen-Han Wang ,  Keng-Chu Lin ,  Tetsuji Ueno ,  Ting-Ting Chen

IPC: H01L29/06 ,  H01L21/02 ,  H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  H01L27/088

Abstract: The present disclosure relates to a semiconductor device including first and second terminals formed on a fin region and a seal layer formed between the first and second terminals. The seal layer includes a silicon carbide material doped with oxygen. The semiconductor device also includes an air gap surrounded by the seal layer, the fin region, and the first and second terminals.

公开(公告)号：US10461079B2

公开(公告)日：2019-10-29

申请号：US16046467

申请日：2018-07-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chen-Han Wang ,  Chun-Hsiung Lin

IPC: H01L27/088 ,  H01L21/8234 ,  H01L21/32 ,  H01L29/417 ,  H01L21/8238 ,  H01L27/092

Abstract: A semiconductor device having a first region and a second region is provided. The first region has a first protruding structure and a second protruding structure. The second region has a third protruding structure and a fourth protruding structure. First, second, third, and fourth epi-layers are formed on the first, second, third, and fourth protruding structures, respectively. The first and second epi-layers are covered with a first photoresist layer while leaving the third and fourth epi-layers exposed. A dielectric layer is formed over the first photoresist layer and over the third and fourth epi-layers. A portion of the dielectric layer is covered with a second photoresist layer. The portion of the dielectric layer is formed over the third and fourth epi-layers. Portions of the dielectric layer not protected by the first and second photoresist layers are etched. The first and second photoresist layers are removed.

公开(公告)号：US20180350805A1

公开(公告)日：2018-12-06

申请号：US16046467

申请日：2018-07-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chen-Han Wang ,  Chun-Hsiung Lin

IPC: H01L27/088 ,  H01L29/417 ,  H01L21/311 ,  H01L21/8234 ,  H01L21/32

Abstract: A semiconductor device having a first region and a second region is provided. The first region has a first protruding structure and a second protruding structure. The second region has a third protruding structure and a fourth protruding structure. First, second, third, and fourth epi-layers are formed on the first, second, third, and fourth protruding structures, respectively. The first and second epi-layers are covered with a first photoresist layer while leaving the third and fourth epi-layers exposed. A dielectric layer is formed over the first photoresist layer and over the third and fourth epi-layers. A portion of the dielectric layer is covered with a second photoresist layer. The portion of the dielectric layer is formed over the third and fourth epi-layers. Portions of the dielectric layer not protected by the first and second photoresist layers are etched. The first and second photoresist layers are removed.

公开(公告)号：US20170221890A1

公开(公告)日：2017-08-03

申请号：US15064647

申请日：2016-03-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chen-Han Wang ,  Chun-Hsiung Lin

IPC: H01L27/088 ,  H01L29/417 ,  H01L21/311 ,  H01L21/8234 ,  H01L21/32

CPC classification number: H01L27/0886 ,  H01L21/32 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0924 ,  H01L29/41791

Abstract: A semiconductor device having a first region and a second region is provided. The first region has a first protruding structure and a second protruding structure. The second region has a third protruding structure and a fourth protruding structure. First, second, third, and fourth epi-layers are formed on the first, second, third, and fourth protruding structures, respectively. The first and second epi-layers are covered with a first photoresist layer while leaving the third and fourth epi-layers exposed. A dielectric layer is formed over the first photoresist layer and over the third and fourth epi-layers. A portion of the dielectric layer is covered with a second photoresist layer. The portion of the dielectric layer is formed over the third and fourth epi-layers. Portions of the dielectric layer not protected by the first and second photoresist layers are etched. The first and second photoresist layers are removed.

公开(公告)号：US12094952B2

公开(公告)日：2024-09-17

申请号：US18297831

申请日：2023-04-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Ting Chen ,  Chen-Han Wang ,  Keng-Chu Lin ,  Shuen-Shin Liang ,  Tsu-Hsiu Perng ,  Tsai-Jung Ho ,  Tsung-Han Ko ,  Tetsuji Ueno ,  Yahru Cheng

IPC: H01L29/49 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/4991 ,  H01L29/0653 ,  H01L29/6656

Abstract: The present disclosure describes a method of forming an intermediate spacer structure between a gate structure and a source/drain (S/D) contact structure and removing a top portion of the intermediate spacer structure to form a recess. The intermediate spacer structure includes a first spacer layer, a second spacer layer, and a sacrificial spacer layer between the first spacer layer and the second spacer layer. The method further includes removing the sacrificial spacer layer to form an air gap between the first spacer layer and the second spacer layer and spinning a dielectric layer on the air gap, the first spacer layer, and the second spacer layer to fill in the recess and seal the air gap. The dielectric layer includes raw materials for a spin-on dielectric material.

公开(公告)号：US11942358B2

公开(公告)日：2024-03-26

申请号：US17200223

申请日：2021-03-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Mrunal Abhijith Khaderbad ,  Ko-Feng Chen ,  Zheng-Yong Liang ,  Chen-Han Wang ,  De-Yang Chiou ,  Yu-Yun Peng ,  Keng-Chu Lin

IPC: H01L21/762 ,  H01L21/311 ,  H01L21/8234

CPC classification number: H01L21/76224 ,  H01L21/31116 ,  H01L21/823481

Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures with an opening in between, filling the opening with a flowable isolation material, treating the flowable isolation material with a plasma, and removing a portion of the plasma-treated flowable isolation material between the first and second fin structures.

公开(公告)号：US11502166B2

公开(公告)日：2022-11-15

申请号：US17100533

申请日：2020-11-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shuen-Shin Liang ,  Chen-Han Wang ,  Keng-Chu Lin ,  Tetsuji Ueno ,  Ting-Ting Chen

IPC: H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

Abstract: The present disclosure relates to a semiconductor device including first and second terminals formed on a fin region and a seal layer formed between the first and second terminals. The seal layer includes a silicon carbide material doped with oxygen. The semiconductor device also includes an air gap surrounded by the seal layer, the fin region, and the first and second terminals.

公开(公告)号：US11480606B2

公开(公告)日：2022-10-25

申请号：US15182577

申请日：2016-06-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chen-Han Wang ,  Chun-Hsiung Lin

IPC: H01L21/66 ,  G01R31/307 ,  G01R31/265

Abstract: A method for estimating at least one electrical property of a semiconductor device is provided. The method includes forming the semiconductor device and at least one testing unit on a substrate, irradiating the testing unit with at least one electron beam, estimating electrons from the testing unit induced by the electron beam, and estimating the electrical property of the semiconductor device according to intensity of the estimated electrons from the testing unit.

公开(公告)号：US20220293458A1

公开(公告)日：2022-09-15

申请号：US17200223

申请日：2021-03-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Mrunal Abhijith Khaderbad ,  Ko-Feng Chen ,  Zheng Yong Liang ,  Chen-Han Wang ,  De-Yang Chiou ,  Yu-Yun Peng ,  Keng-Chu Lin

IPC: H01L21/762 ,  H01L21/311 ,  H01L21/8234

Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures with an opening in between, filling the opening with a flowable isolation material, treating the flowable isolation material with a plasma, and removing a portion of the plasma-treated flowable isolation material between the first and second fin structures