公开(公告)号：US20210020764A1

公开(公告)日：2021-01-21

申请号：US16931398

申请日：2020-07-16

申请人： Shinichiro Takatani

发明人： Shinichiro Takatani

IPC分类号： H01L29/737 ,  H01L29/205 ,  H01L29/08 ,  H01L29/10

摘要： The invention provides a structure of an emitter layer and a base layer that reduces the influence of a conduction band energy barrier generated at an interface between the emitter layer and the base layer on power amplifier characteristics for a GaAs HBT using InGaAs grown by pseudomorphic growth in the base layer. In the first invention, InGaP having a CuPt-type ordering is used in the emitter layer. In the second invention, a p-type impurity concentration of an InGaAs base layer grown by pseudomorphic growth is less in an emitter layer side portion than in a collector layer side portion.

公开(公告)号：US20130069708A1

公开(公告)日：2013-03-21

申请号：US13677601

申请日：2012-11-15

申请人： Shigeki Koya ,  Shinichiro Takatani ,  Takashi Ogawa ,  Akishige Nakajima ,  Yasushi Shigeno

发明人： Shigeki Koya ,  Shinichiro Takatani ,  Takashi Ogawa ,  Akishige Nakajima ,  Yasushi Shigeno

IPC分类号： H03K17/687

CPC分类号： H03K17/687 ,  H04B1/006 ,  H04B1/406 ,  H04B1/525

摘要： One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg1n-Rg3n of a near-I/O FET Qn1 near to a common input/output terminal I/O connected with an antenna are set to be higher in linearity than V-I characteristics of middle-portion gate resistances Rg3n and Rg4n of middle-portion FETs Qn3 and Qn4. Thus, even in case that an uneven RF leak signal is supplied to near-I/O gate resistances Rg1n-Rg3n, and middle-portion gate resistances Rg3n and Rg4n, the distortion of current flowing through the near-I/O gate resistances Rg1n-Rg3n near to the input/output terminal I/O can be reduced.

摘要翻译： 一个高频开关Qm提供发送和接收信号到ON，另一个高频开关Qn提供另一个系统的信号为OFF。 在另一个高频开关Qn中，设定与天线连接的公共输入输出端子I / O附近的近I / O FET Qn1的近I / O栅极电阻Rg1n-Rg3n的VI特性， 与中间部分FET Qn3和Qn4的中间部分栅极电阻Rg3n和Rg4n的VI特性的线性度相比更高。 因此，即使在向近I / O栅极电阻Rg1n-Rg3n和中间部分栅极电阻Rg3n和Rg4n提供不均匀的RF泄漏信号的情况下，流过近I / O栅极电阻Rg1n的电流的失真 可以减少靠近输入/输出端子I / O的-Rg3n。

公开(公告)号：US08330524B2

公开(公告)日：2012-12-11

申请号：US13419194

申请日：2012-03-13

申请人： Kaoru Katoh ,  Shigeki Koya ,  Shinichiro Takatani ,  Yasushi Shigeno ,  Akishige Nakajima ,  Takashi Ogawa

发明人： Kaoru Katoh ,  Shigeki Koya ,  Shinichiro Takatani ,  Yasushi Shigeno ,  Akishige Nakajima ,  Takashi Ogawa

IPC分类号： H03K6/687

CPC分类号： H03K17/693 ,  H03K17/063

摘要： A semiconductor integrated circuit which reduces and increase in the level of a harmonic signal of an RF transmission output signal at the time of supplying an RF transmission signal to a bias generation circuit of an antenna switch, including an antenna switch having a bias generation circuit, a transmitter switch, and a receiver switch. The on/off state of a transistor of the transmitter switch coupled between a transmitter port and an I/O port is controlled by a transmit control bias. The on/off state of the transistors of the receiver switch coupled between the I/O port and a receiver port is controlled by a receiver control bias. An RF signal input port of the bias generation circuit is coupled to the transmit port, and a negative DC output bias generated from a DC output port is supplied to a gate control port of transistors of the receiver switch.

摘要翻译： 一种半导体集成电路，其在将RF发送信号提供给天线开关的偏置产生电路时降低并增加RF发送输出信号的谐波信号的电平，包括具有偏置产生电路的天线开关， 发射器开关和接收器开关。 耦合在发送器端口和I / O端口之间的发送器开关的晶体管的开/关状态由发送控制偏置来控制。 耦合在I / O端口和接收器端口之间的接收器开关的晶体管的开/关状态由接收器控制偏置来控制。 偏置产生电路的RF信号输入端口耦合到发送端口，并且从DC输出端口产生的负DC输出偏置被提供给接收器开关的晶体管的栅极控制端口。

公开(公告)号：US20060118951A1

公开(公告)日：2006-06-08

申请号：US11291815

申请日：2005-12-02

申请人： Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

发明人： Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

IPC分类号： H01L23/34

CPC分类号： H01L27/0605 ,  H01L27/0629 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7783 ,  H01L2924/0002 ,  H01L2924/00

摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.

公开(公告)号：US20060061434A1

公开(公告)日：2006-03-23

申请号：US11178312

申请日：2005-07-12

申请人： Takashi Ogawa ,  Shinichiro Takatani ,  Akishige Nakajima ,  Yasushi Shigeno ,  Eigo Tange

发明人： Takashi Ogawa ,  Shinichiro Takatani ,  Akishige Nakajima ,  Yasushi Shigeno ,  Eigo Tange

IPC分类号： H01P1/15

CPC分类号： H04B1/525

摘要： An object of the present invention is to provide an antenna switch circuit that effectively reduces signal leakages at a cross point even at higher operating frequencies and a high frequency module containing said antenna switch module. The antenna switch circuit comprises: a high frequency signal line to transmit a transmitting signal to be input to transmitting terminals to an antenna terminal and also to transmit a receiving signal to be input to the antenna terminal to receiving terminals; switches that are connected in the middle of the high frequency signal line between transmitting terminal and antenna terminal; switches that are connected in the middle of the high frequency signal line between receiving terminal and antenna terminal; and signal lines to transmit control signals for controlling turning on and off of the switches.

摘要翻译： 本发明的一个目的是提供一种天线切换电路，即使在较高的工作频率下也能有效地减少交叉点处的信号泄漏，并且包含天线开关模块的高频模块。 天线开关电路包括：高频信号线，用于向天线端子发送要输入到发送端的发送信号，并且向接收终端发送要输入到天线端子的接收信号; 在发射端和天线端之间的高频信号线中间连接的开关; 在接收终端和天线终端之间的高频信号线中间连接的交换机; 和信号线发送用于控制开关的接通和断开的控制信号。

公开(公告)号：US06800889B2

公开(公告)日：2004-10-05

申请号：US10073240

申请日：2002-02-13

申请人： Shinichiro Takatani ,  Hiroshi Miki ,  Keiko Kushida ,  Yoshihisa Fujisaki ,  Kazuyoshi Torii

发明人： Shinichiro Takatani ,  Hiroshi Miki ,  Keiko Kushida ,  Yoshihisa Fujisaki ,  Kazuyoshi Torii

IPC分类号： H01L2976

CPC分类号： H01L28/55 ,  H01L28/60

摘要： A semiconductor device includes a capacitor having a lower electrode (102), a high-dielectric-constant or ferroelectric thin film (103), and an upper electrode (104) which are subsequently stacked. An impurity having an action of suppressing the catalytic activity of a metal or a conductive oxide constituting the electrode is added to the upper electrode (104). The addition of the impurity is effective to prevent inconveniences such as a reduction in capacitance, an insulation failure, and the peeling of the electrode due to hydrogen heat-treatment performed after formation of the upper electrode (104), and to improve the long-term reliability.

摘要翻译： 半导体器件包括随后堆叠的具有下电极（102），高介电常数或铁电薄膜（103）和上电极（104）的电容器。 具有抑制构成电极的金属或导电氧化物的催化活性的作用的杂质被添加到上电极（104）。 杂质的添加对于防止在形成上电极（104）之后进行的氢热处理等电容的减少，绝缘失效以及电极的剥离等不良情况是有效的， 长期可靠性。

公开(公告)号：US06469326B2

公开(公告)日：2002-10-22

申请号：US09793113

申请日：2001-02-27

申请人： Katsuhiko Higuchi ,  Shinichiro Takatani

发明人： Katsuhiko Higuchi ,  Shinichiro Takatani

IPC分类号： H01L31072

CPC分类号： H01L29/7783 ,  H01L27/0605 ,  H01L29/812

摘要： It is an object of the present invention to provide a radio frequency module incorporating an MMIC that has a high S/N ratio while ensuring a high output. A radio frequency module according to the present invention incorporates an MMIC having a field effect transistor in which channel layers for traveling of carriers are formed by a heterostructure of two or more different kinds of materials, and height of a potential barrier of an interface between the different kinds of materials is less than 0.22 eV.

摘要翻译： 本发明的一个目的是提供一种结合具有高S / N比的MMIC的射频模块，同时确保高输出。根据本发明的射频模块包括具有场效应晶体管的MMIC，其中 通过两种或多种不同种类的材料的异质结构形成载流子行进通道层，不同种类的材料之间的界面的势垒的高度小于0.22eV。

公开(公告)号：US20210226019A1

公开(公告)日：2021-07-22

申请号：US17143144

申请日：2021-01-06

申请人： Shinichiro Takatani ,  Riichiro Shirota

发明人： Shinichiro Takatani ,  Riichiro Shirota

IPC分类号： H01L29/40 ,  H01L29/778 ,  H01L29/06 ,  H01L29/423

摘要： A normally-off vertical nitride semiconductor transistor device with low threshold voltage variation includes a drift layer containing a nitride semiconductor, a channel region electrically connected to the drift layer, a source electrode, a drain electrode, a gate insulating film, and a gate electrode. The gate insulating film includes at least a first insulating film located at the channel region side, a second insulating film located at the gate electrode side, and a third insulating film between the second insulating film and the gate electrode, wherein the second insulating film has charge traps with energy levels located inside the band gaps of both the first and third insulating films, and the threshold voltage is adjusted by charges accumulated in the charge traps. The threshold voltage is used to block flowing current by substantially eliminating conduction carriers of the channel region by voltage applied to the gate electrode.

公开(公告)号：US09899507B2

公开(公告)日：2018-02-20

申请号：US15390590

申请日：2016-12-26

申请人： Riichiro Shirota ,  Shinichiro Takatani

发明人： Riichiro Shirota ,  Shinichiro Takatani

IPC分类号： H01L21/84 ,  H01L27/06 ,  H01L29/20 ,  H01L29/423 ,  H01L29/739 ,  H01L29/778 ,  H01L21/335 ,  H01L29/06 ,  H01L29/205 ,  H01L29/417 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L29/7787 ,  H01L28/00 ,  H01L29/0642 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/517 ,  H01L29/7786 ,  H01L29/7831 ,  H01L29/7832 ,  H01L29/788 ,  H01L29/792

摘要： A nitride semiconductor transistor device provides a normally-off nitride semiconductor transistor device which is excellent in switching properties with less dispersion of the properties. The nitride semiconductor transistor device has a buffer layer, a GaN layer, and an AlGaN layer in turn grown on a substrate. A first insulating film, a charge storage layer, a second insulating film, and a control electrode are in turn grown on the AlGaN layer. A source electrode and a drain electrode are formed to sandwich the charge storage layer over the AlGaN layer. A threshold voltage to shut off an electric current flowing between the source and drain electrodes through a conductive channel induced at an interface of the AlGaN layer and the GaN layer is made positive by adjusting the charge stored in the charge storage layer.

公开(公告)号：US08385847B2

公开(公告)日：2013-02-26

申请号：US12929940

申请日：2011-02-25

申请人： Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

发明人： Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

IPC分类号： H04B1/44

CPC分类号： H01L27/0605 ,  H01L27/0629 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7783 ,  H01L2924/0002 ,  H01L2924/00

摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.