公开(公告)号：US07995972B2

公开(公告)日：2011-08-09

申请号：US12222193

申请日：2008-08-05

Applicant: Akishige Nakajima ,  Takashi Ogawa ,  Hidenori Suenaga ,  Eigo Tange ,  Shinya Osakabe ,  Yasushi Shigeno

Inventor： Akishige Nakajima ,  Takashi Ogawa ,  Hidenori Suenaga ,  Eigo Tange ,  Shinya Osakabe ,  Yasushi Shigeno

IPC: H04B1/44

CPC classification number: H03F3/195 ,  H03F1/0277 ,  H03F1/32 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/372 ,  H03F2200/429

Abstract: There are provided a transmission/reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission/reception switching circuit is mounted. As an element composing a transmission/reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.

Abstract translation: 提供了一种插入损耗和谐波失真小的发送/接收切换电路，并且允许功率放大器和安装发送/接收切换电路的通信用电子部件的输出功率的增加。 作为构成无线通信系统中的发送/接收切换电路的元件，使用串联连接的FET或多栅极FET来代替二极管。 连接在各个栅极端子和控制端子之间的栅极电阻被设计成具有从施加最低电压的栅极施加最高电压的栅极逐渐变小的电阻值。

公开(公告)号：US20090104881A1

公开(公告)日：2009-04-23

申请号：US12314644

申请日：2008-12-15

Applicant: Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

Inventor： Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

IPC: H04B1/44 ,  H01L29/778

CPC classification number: H01L27/0605 ,  H01L27/0629 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7783 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.

Abstract translation: 提供了一种开关元件，其实现了在不增加插入损耗的情况下使多栅极的栅极之间的电位稳定，并且每个使用开关元件的天线开关电路和射频模块。 开关元件包括形成在半导体衬底上的两个欧姆电极39,40，设置在两个欧姆电极之间的至少两个栅极电极41,42以及设置在至少两个栅电极之间的相邻栅电极之间的导电区域45， 场效应晶体管由两个欧姆电极，至少两个栅极电极和导电区域构成。 导电区域的宽度部分的宽度比插入在其一端的相邻栅电极之间的导电区域宽。 相邻栅电极之间的距离比较宽部分的宽度窄。 电阻器44,46通过较宽部分串联连接在两个欧姆电极之间。

公开(公告)号：US07437129B2

公开(公告)日：2008-10-14

申请号：US11892044

申请日：2007-08-20

Applicant: Akishige Nakajima ,  Takashi Ogawa ,  Hidenori Suenaga ,  Eigo Tange ,  Shinya Osakabe ,  Yasushi Shigeno

Inventor： Akishige Nakajima ,  Takashi Ogawa ,  Hidenori Suenaga ,  Eigo Tange ,  Shinya Osakabe ,  Yasushi Shigeno

IPC: H04B1/44

CPC classification number: H03F3/195 ,  H03F1/0277 ,  H03F1/32 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/372 ,  H03F2200/429

Abstract: There are provided a transmission/reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission/reception switching circuit is mounted. As an element composing a transmission/reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.

Abstract translation: 提供了一种插入损耗和谐波失真小的发送/接收切换电路，并且允许功率放大器和安装发送/接收切换电路的通信用电子部件的输出功率的增加。 作为构成无线通信系统中的发送/接收切换电路的元件，使用串联连接的FET或多栅极FET来代替二极管。 连接在各个栅极端子和控制端子之间的栅极电阻被设计成具有从施加最低电压的栅极施加最高电压的栅极逐渐变小的电阻值。

公开(公告)号：US20080042776A1

公开(公告)日：2008-02-21

申请号：US11892044

申请日：2007-08-20

Applicant: Akishige Nakajima ,  Takashi Ogawa ,  Hidenori Suenaga ,  Eigo Tange ,  Shinya Osakabe ,  Yasushi Shigeno

Inventor： Akishige Nakajima ,  Takashi Ogawa ,  Hidenori Suenaga ,  Eigo Tange ,  Shinya Osakabe ,  Yasushi Shigeno

IPC: H01P1/10 ,  H04B1/44

CPC classification number: H03F3/195 ,  H03F1/0277 ,  H03F1/32 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/372 ,  H03F2200/429

Abstract: There are provided a transmission/reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission/reception switching circuit is mounted. As an element composing a transmission/reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.

公开(公告)号：US08169008B2

公开(公告)日：2012-05-01

申请号：US12909300

申请日：2010-10-21

Applicant: Masao Yamane ,  Atsushi Kurokawa ,  Shinya Osakabe ,  Eigo Tange ,  Yasushi Shigeno ,  Hiroyuki Takazawa

Inventor： Masao Yamane ,  Atsushi Kurokawa ,  Shinya Osakabe ,  Eigo Tange ,  Yasushi Shigeno ,  Hiroyuki Takazawa

IPC: H01L31/00 ,  H01L31/113

CPC classification number: H01L29/7787 ,  H01L21/8252 ,  H01L27/0605

Abstract: The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is patterned so as to extend in the vertical direction of the page surface between source electrodes 13 and drain electrodes 14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode 17 disposed outside the active region is reduced, and the area of a gate pad 17A is reduced.

Abstract translation: 本发明将用作射频模块中的开关元件的HEMT元件小型化。 单个栅极电极17形成在由包含GaAs的基板1的主表面上的元件分离部分9限定的有源区域中。 栅电极17被图案化以在源电极13和漏电极14之间的页表面的垂直方向上延伸，并且在其它部分沿左右方向延伸。 因此，设置在有源区域之外的栅电极17的比率减小，并且栅极焊盘17A的面积减小。

公开(公告)号：US20110031533A1

公开(公告)日：2011-02-10

申请号：US12909300

申请日：2010-10-21

Applicant: Masao Yamane ,  Atsushi Kurokawa ,  Shinya Osakabe ,  Eigo Tange ,  Yasushi Shigeno ,  Hiroyuki Takazawa

Inventor： Masao Yamane ,  Atsushi Kurokawa ,  Shinya Osakabe ,  Eigo Tange ,  Yasushi Shigeno ,  Hiroyuki Takazawa

IPC: H01L29/778

CPC classification number: H01L29/7787 ,  H01L21/8252 ,  H01L27/0605

Abstract: The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is patterned so as to extend in the vertical direction of the page surface between source electrodes 13 and drain electrodes 14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode 17 disposed outside the active region is reduced, and the area of a gate pad 17A is reduced.

Abstract translation: 本发明将用作射频模块中的开关元件的HEMT元件小型化。 单个栅极电极17形成在由包含GaAs的基板1的主表面上的元件分离部分9限定的有源区域中。 栅电极17被图案化以在源电极13和漏电极14之间的页表面的垂直方向上延伸，并且在其它部分沿左右方向延伸。 因此，设置在有源区域之外的栅电极17的比率减小，并且栅极焊盘17A的面积减小。

公开(公告)号：US07838914B2

公开(公告)日：2010-11-23

申请号：US11979565

申请日：2007-11-06

Applicant: Masao Yamane ,  Atsushi Kurokawa ,  Shinya Osakabe ,  Eigo Tange ,  Yasushi Shigeno ,  Hiroyuki Takazawa

Inventor： Masao Yamane ,  Atsushi Kurokawa ,  Shinya Osakabe ,  Eigo Tange ,  Yasushi Shigeno ,  Hiroyuki Takazawa

IPC: H01L31/00 ,  H01L31/113

CPC classification number: H01L29/7787 ,  H01L21/8252 ,  H01L27/0605

Abstract: The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is patterned so as to extend in the vertical direction of the page surface between source electrodes 13 and drain electrodes 14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode 17 disposed outside the active region is reduced, and the area of a gate pad 17A is reduced.

Abstract translation: 本发明将用作射频模块中的开关元件的HEMT元件小型化。 单个栅极电极17形成在由包含GaAs的基板1的主表面上的元件分离部分9限定的有源区域中。 栅电极17被图案化以在源电极13和漏电极14之间的页表面的垂直方向上延伸，并且在其它部分沿左右方向延伸。 因此，设置在有源区域之外的栅电极17的比率减小，并且栅极焊盘17A的面积减小。

公开(公告)号：US07783265B2

公开(公告)日：2010-08-24

申请号：US12314644

申请日：2008-12-15

Applicant: Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

Inventor： Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

IPC: H04B1/44

CPC classification number: H01L27/0605 ,  H01L27/0629 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7783 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.

Abstract translation: 提供了一种开关元件，其实现了在不增加插入损耗的情况下使多栅极的栅极之间的电位稳定，并且每个使用开关元件的天线开关电路和射频模块。 开关元件包括形成在半导体衬底上的两个欧姆电极39,40，设置在两个欧姆电极之间的至少两个栅极电极41,42以及设置在至少两个栅电极之间的相邻栅电极之间的导电区域45， 场效应晶体管由两个欧姆电极，至少两个栅极电极和导电区域构成。 导电区域的宽度部分的宽度比插入在其一端的相邻栅电极之间的导电区域宽。 相邻栅电极之间的距离比较宽部分的宽度窄。 电阻器44,46通过较宽部分串联连接在两个欧姆电极之间。

公开(公告)号：US07650134B2

公开(公告)日：2010-01-19

申请号：US11512189

申请日：2006-08-30

Applicant: Akishige Nakajima ,  Yasushi Shigeno ,  Takashi Ogawa ,  Shinya Osakabe ,  Tomoyuki Ishikawa

Inventor： Akishige Nakajima ,  Yasushi Shigeno ,  Takashi Ogawa ,  Shinya Osakabe ,  Tomoyuki Ishikawa

IPC: H04B1/16

CPC classification number: H04B1/006

Abstract: In a SPDT switch, a resistor for leak path is connected between a terminal for antenna and a reference potential. The resistor for leak path allows charge capacitances accumulated in electrostatic capacitor elements provided as DC cut capacitors connected to transmission signal terminals and reception signal terminals to be discharged and allows rapid lowering of a potential at the terminal for antenna. In the SPDT switch, a switching characteristic is improved and a delay in the rising edge of a low-power slot which comes after a high-power slot is reduced.

Abstract translation: 在SPDT开关中，用于泄漏路径的电阻器连接在天线端子和参考电位之间。 泄漏路径电阻允许在连接到发送信号端子和接收信号端子的DC切断电容器上设置的静电电容器元件中蓄积的充电电容被放电，并允许在天线端子处的电位快速降低。 在SPDT开关中，改善了开关特性，并且降低了在大功率插槽之后的低功率插槽的上升沿的延迟。

公开(公告)号：US20080073671A1

公开(公告)日：2008-03-27

申请号：US11979565

申请日：2007-11-06

Applicant: Masao Yamane ,  Atsushi Kurokawa ,  Shinya Osakabe ,  Eigo Tange ,  Yasushi Shigeno ,  Hiroyuki Takazawa

Inventor： Masao Yamane ,  Atsushi Kurokawa ,  Shinya Osakabe ,  Eigo Tange ,  Yasushi Shigeno ,  Hiroyuki Takazawa

IPC: H01L29/778

CPC classification number: H01L29/7787 ,  H01L21/8252 ,  H01L27/0605

Abstract: The present invention miniaturizes a HEMT element used as a switching element in a radio frequency module. A single gate electrode 17 is formed in an active region defined by an element separation portion 9 on a main surface of a substrate 1 comprising GaAs. The gate electrode 17 is patterned so as to extend in the vertical direction of the page surface between source electrodes 13 and drain electrodes 14, and to extend in left and right directions at other portions. Thus, the ratio of the gate electrode 17 disposed outside the active region is reduced, and the area of a gate pad 17A is reduced.

Abstract translation: 本发明将用作射频模块中的开关元件的HEMT元件小型化。 单个栅极电极17形成在由包含GaAs的基板1的主表面上的元件分离部分9限定的有源区域中。 栅电极17被图案化以在源电极13和漏电极14之间的页表面的垂直方向上延伸，并且在其它部分沿左右方向延伸。 因此，设置在有源区域之外的栅电极17的比率减小，并且栅极焊盘17A的面积减小。