公开(公告)号：US09944738B2

公开(公告)日：2018-04-17

申请号：US15206684

申请日：2016-07-11

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Daisuke Domon ,  Satoshi Watanabe ,  Keiichi Masunaga ,  Masaaki Kotake

IPC: C08F216/10 ,  G03F1/78 ,  G03F7/039 ,  G03F7/09 ,  G03F7/20 ,  G03F7/32 ,  C08F220/38

CPC classification number: C08F216/10 ,  C08F220/38 ,  G03F1/78 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/093 ,  G03F7/2059 ,  G03F7/322 ,  C08F216/02 ,  C08F212/32 ,  C08F216/1416 ,  C08F2220/382

Abstract: A polymer compound containing a repeating unit shown by the formula (1c) and one or more repeating units selected from a repeating unit shown by the formula (2) and a repeating unit shown by the formula (3), wherein Mb+ represents a sulfonium cation shown by the formula (a) or an iodonium cation shown by the formula (b), This polymer compound is suitable as a base resin of a resist composition capable of forming a resist film that allows pattern formation with extremely high resolution, small LER, and excellent rectangularity.

公开(公告)号：US09709890B2

公开(公告)日：2017-07-18

申请号：US14847335

申请日：2015-09-08

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Jun Hatakeyama ,  Masayoshi Sagehashi ,  Daisuke Domon ,  Koji Hasegawa

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/38 ,  G03F7/32 ,  G03F7/20 ,  G03F7/039 ,  H01L21/311

CPC classification number: G03F7/0382 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/38 ,  H01L21/31116

Abstract: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a carboxyl and/or hydroxyl group optionally substituted with an acid labile group, an oxirane or oxetane compound having a hydrophilic group, and an acid generator onto a substrate, prebaking, exposing, baking, and developing in an organic solvent so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high sensitivity and high dissolution contrast during organic solvent development and forms a fine hole or trench pattern via positive/negative reversal.

公开(公告)号：US09645493B2

公开(公告)日：2017-05-09

申请号：US15091092

申请日：2016-04-05

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Daisuke Domon ,  Keiichi Masunaga ,  Satoshi Watanabe

IPC: G03F7/004 ,  G03F7/038 ,  C08F220/18 ,  C07C381/12 ,  C08F220/24 ,  C08F220/30 ,  G03F1/76 ,  G03F1/78 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/038 ,  C07C381/12 ,  C08F220/18 ,  C08F220/24 ,  C08F220/30 ,  G03F1/76 ,  G03F1/78 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2004 ,  G03F7/2059 ,  G03F7/327

Abstract: A negative resist composition is provided comprising (A) a polymer comprising recurring units having an acid-eliminatable group and recurring units capable of generating acid upon exposure and (B) a carboxylic acid onium salt. When the negative resist composition is processed by the microprocessing technology, especially EB lithography, it forms a pattern having a very high resolution and minimal LER.

公开(公告)号：US20160299431A1

公开(公告)日：2016-10-13

申请号：US15089788

申请日：2016-04-04

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Teppei Adachi ,  Satoshi Watanabe ,  Daisuke Domon ,  Keiichi Masunaga

IPC: G03F7/038 ,  G03F7/32 ,  G03F7/20 ,  G03F1/50 ,  G03F7/09

CPC classification number: G03F7/0382 ,  G03F1/50 ,  G03F1/80 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/09 ,  G03F7/093 ,  G03F7/11 ,  G03F7/2059 ,  G03F7/322 ,  G03F7/36 ,  G03F7/40 ,  G03F7/405

Abstract: A photomask blank has a chemically amplified negative resist film comprising (A) a polymer comprising recurring units of specific structure and recurring units having fluorine, (B) a base resin adapted to reduce its solubility in alkaline developer under the action of acid, (C) an acid generator, and (D) a basic compound. The resist film is improved in receptivity to antistatic film.

Abstract translation: （A）包含具有特定结构的重复单元和具有氟的重复单元的聚合物，（B）适于降低其在酸性作用下在碱性显影剂中的溶解度的基础树脂（C）的化学放大阴性抗蚀剂膜，（C） ）酸产生剂，和（D）碱性化合物。 抗静电膜对抗静电膜的接受性提高。

公开(公告)号：US20160299428A1

公开(公告)日：2016-10-13

申请号：US15094348

申请日：2016-04-08

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Keiichi Masunaga ,  Satoshi Watanabe ,  Masaaki Kotake ,  Daisuke Domon ,  Takayuki Fujiwara

IPC: G03F7/004 ,  G03F1/22 ,  G03F1/20 ,  G03F7/038

CPC classification number: G03F7/0045 ,  G03F1/20 ,  G03F1/22 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/09 ,  G03F7/2059 ,  G03F7/30 ,  G03F7/322

Abstract: A chemically amplified negative resist composition is defined as comprising (A) an onium salt having an anion moiety which is a nitrogen-containing carboxylate of fused ring structure, (B) a base resin, and (C) a crosslinker. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.

Abstract translation: 化学放大型负性抗蚀剂组合物定义为（A）具有阴离子部分的鎓盐，其为稠环结构的含氮羧酸盐，（B）基础树脂和（C）交联剂。 抗蚀剂组合物在曝光步骤中控制酸扩散是有效的，在图案形成期间显示非常高的分辨率，并形成具有最小LER的图案。

公开(公告)号：US09023587B2

公开(公告)日：2015-05-05

申请号：US14138165

申请日：2013-12-23

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Jun Hatakeyama ,  Koji Hasegawa ,  Daisuke Domon

IPC: G03F7/004 ,  G03F7/32 ,  G03F7/038 ,  C08F220/18 ,  C08F20/16 ,  C08F18/04

CPC classification number: G03F7/322 ,  C08F18/04 ,  C08F20/16 ,  C08F220/18 ,  G03F7/0046 ,  G03F7/0382 ,  Y10S430/128

Abstract: A polymer comprising recurring units (a) of styrene having an HFA group and an ester group adjacent thereto and recurring units (b) having a hydroxyl group is used as base resin to formulate a negative resist composition. The negative resist composition has a high dissolution contrast in alkaline developer, high sensitivity, high resolution, good pattern profile after exposure, and a suppressed acid diffusion rate.

Abstract translation: 使用包含具有HFA基的苯乙烯和与其相邻的酯基的重复单元（a）和具有羟基的重复单元（b））的聚合物作为基础树脂以配制负性抗蚀剂组合物。 负极性抗蚀剂组合物在碱性显影剂中具有高的溶解度对比度，高灵敏度，高分辨率，曝光后的良好图案轮廓和抑制的酸扩散速率。

公开(公告)号：US11548844B2

公开(公告)日：2023-01-10

申请号：US16417909

申请日：2019-05-21

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Daisuke Domon ,  Masayoshi Sagehashi ,  Masaaki Kotake ,  Naoya Inoue ,  Keiichi Masunaga ,  Satoshi Watanabe

IPC: G03F7/038 ,  G03F7/20 ,  G03F7/16 ,  G03F7/32 ,  G03F7/38 ,  G03F1/20 ,  G03F1/22 ,  C07C33/30 ,  C07C69/54 ,  C08F220/30 ,  G03F1/60 ,  C08F212/14 ,  C08F220/28

Abstract: A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

公开(公告)号：US11048165B2

公开(公告)日：2021-06-29

申请号：US16142552

申请日：2018-09-26

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Jun Hatakeyama ,  Daisuke Domon

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/16 ,  G06F7/38 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38

Abstract: A resist composition comprising a base polymer and a sulfonium salt of brominated indole or brominated indazole carboxylic acid offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

公开(公告)号：US20190113843A1

公开(公告)日：2019-04-18

申请号：US16142760

申请日：2018-09-26

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Jun Hatakeyama ,  Daisuke Domon

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38

Abstract: A resist composition comprising a base polymer and a sulfonium or iodonium salt capable of generating a brominated benzene-containing sulfonic acid offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

公开(公告)号：US10191372B2

公开(公告)日：2019-01-29

申请号：US15586534

申请日：2017-05-04

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Jun Hatakeyama ,  Daisuke Domon

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/16 ,  G03F7/32 ,  G03F7/38 ,  G03F7/20 ,  G03F1/20 ,  G03F1/22 ,  C08F212/14 ,  C08F12/32 ,  C08F12/20 ,  C08F12/22 ,  C09D125/18 ,  C08F12/24

Abstract: A polymer comprising recurring units derived from vinylanthraquinone, recurring units derived from acid labile group-substituted hydroxystyrene, and recurring units derived from hydroxystyrene is provided. The polymer is used as a base resin to formulate a positive resist composition having a high resolution and minimal LER.