公开(公告)号：US10181497B2

公开(公告)日：2019-01-15

申请号：US15409656

申请日：2017-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Heo ,  Kyu Sik Kim ,  Nam Jeong Kim ,  Seong Heon Kim ,  Yongsung Kim ,  Eunae Cho ,  Takkyun Ro ,  Dongjin Yun ,  Yongsu Kim ,  Wenxu Xianyu ,  Yong-Young Park ,  Kyung Bae Park

IPC: H01L27/30 ,  H01L51/44 ,  H01L51/50 ,  H01L51/52 ,  H01L27/146 ,  H01L51/56 ,  H01L51/42

Abstract: An optoelectronic device includes a first electrode and a second electrode facing each other a photoelectric conversion layer between the first electrode and the second electrode and a buffer layer between the photoelectric conversion layer and the second electrode. The buffer layer includes a nitride. The nitride includes one of silicon nitride (SiNx, 0

公开(公告)号：US12276026B2

公开(公告)日：2025-04-15

申请号：US18455941

申请日：2023-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bo-Eun Park ,  Jooho Lee ,  Yongsung Kim ,  Jeonggyu Song

IPC: C23C16/56 ,  C01G27/02 ,  C23C14/08 ,  C23C14/58 ,  C23C16/40 ,  C23C16/455 ,  H10B51/00 ,  H10B53/00

Abstract: A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfxA1-xO2 satisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfxA1-xO2 is in a range of 0.3 to 0.5.

公开(公告)号：US11808918B2

公开(公告)日：2023-11-07

申请号：US17499170

申请日：2021-10-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaekwan Kim ,  Jeongyub Lee ,  Seunghoon Han ,  Yongsung Kim ,  Byunghoon Na ,  Jangwoo You ,  Changseung Lee

IPC: G02B6/32 ,  G02B1/00 ,  G02B27/42 ,  G02B5/00 ,  G02B5/18 ,  B82Y20/00

CPC classification number: G02B1/002 ,  G02B5/005 ,  G02B5/1814 ,  G02B27/4211 ,  B82Y20/00

Abstract: Provided are meta-surface optical device and methods of manufacturing the same. The meta-surface optical device may include a meta-surface arranged on a region of a substrate and a light control member arranged around the meta-surface. The light control member may be arranged on or below the substrate. A material layer formed of the same material used to form the meta-surface may be disposed between the light control member and the substrate. Also, the meta-surface may be a first meta-surface arranged on an upper surface of the substrate, and a second meta-surface may be arranged on a bottom surface of the substrate. Also, the meta-surface may include a first meta-surface and at least one second meta-surface may formed on the first meta-surface, and the light control member may be arranged around the at least one second meta-surface.

公开(公告)号：US11765887B2

公开(公告)日：2023-09-19

申请号：US17116097

申请日：2020-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Boeun Park ,  Yongsung Kim ,  Jooho Lee

IPC: G11C11/22 ,  H10B12/00 ,  H01L49/02 ,  H01L29/51 ,  G01G7/00 ,  G01G7/06 ,  G11C19/00 ,  G11C19/18

CPC classification number: H10B12/37 ,  G01G7/00 ,  G01G7/06 ,  G11C11/221 ,  G11C11/223 ,  G11C11/2275 ,  G11C19/005 ,  G11C19/18 ,  H01L28/56 ,  H01L29/516 ,  H10B12/33

Abstract: A capacitor comprises a first electrode, a second electrode provided on the first electrode, a ferroelectric film provided between the first electrode and the second electrode, and a dielectric film provided between the ferroelectric film and the second electrode, impedance of the ferroelectric film and impedance of the dielectric film are determined such that a control voltage applied between the first electrode and the second electrode is equal to a capacitance boosting operating voltage, and the capacitance boosting operating voltage is determined by the following equation:





V
MAX

=


(

1
+



❘
"\[LeftBracketingBar]"


Z
2


❘
"\[RightBracketingBar]"




❘
"\[LeftBracketingBar]"


Z
1


❘
"\[RightBracketingBar]"




)

⁢

t
F

⁢

E
FM






where VMAX is a capacitance boosting operating voltage, Z1 is impedance of the ferroelectric film, Z2 is impedance of the dielectric film, tF is a thickness of the ferroelectric film, and EFM is an electric field applied to the ferroelectric film having a maximum polarization.

公开(公告)号：US11761089B2

公开(公告)日：2023-09-19

申请号：US16827862

申请日：2020-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bo-Eun Park ,  Jooho Lee ,  Yongsung Kim ,  Jeonggyu Song

IPC: C23C16/40 ,  H10B51/00 ,  C23C16/56 ,  C23C16/455 ,  C23C14/58 ,  C01G27/02 ,  C23C14/08 ,  H10B53/00

CPC classification number: C23C16/56 ,  C01G27/02 ,  C23C14/08 ,  C23C14/5806 ,  C23C16/40 ,  C23C16/45525 ,  H10B51/00 ,  H10B53/00 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2004/24 ,  C01P2006/40

Abstract: A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfxA1-xO2 satisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfxA1-xO2 is in a range of 0.3 to 0.5.

公开(公告)号：US20220025515A1

公开(公告)日：2022-01-27

申请号：US17497523

申请日：2021-10-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jooho Lee ,  Yongsung Kim ,  Sanghoon Song ,  Wooyoung Yang ,  Changseung Lee ,  Sungjin Lim ,  Junsik Hwang

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/06 ,  C23C16/44 ,  H01M4/04 ,  H01M10/052 ,  H01J37/32 ,  H01M4/13 ,  C23C16/00

Abstract: A plasma-enhanced chemical vapor deposition apparatus for depositing a lithium (Li)-based film on a surface of a substrate includes a reaction chamber, in which the substrate is disposed; a first source supply configured to supply a Li source material into the reaction chamber; a second source supply configured to supply phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; a power supply configured to supply power into the reaction chamber to generate plasma in the reaction chamber; and a controller configured to control the power supply to turn on or off generation of the plasma.

公开(公告)号：US11133179B2

公开(公告)日：2021-09-28

申请号：US16697774

申请日：2019-11-27

Applicant: Samsung Electronics Co., Ltd. ,  Cornell University

Inventor： Kiyoung Lee ,  Woojin Lee ,  Myoungho Jeong ,  Yongsung Kim ,  Eunsun Kim ,  Hyosik Mun ,  Jooho Lee ,  Changseung Lee ,  Kyuho Cho ,  Darrell G. Schlom ,  Craig J. Fennie ,  Natalie M. Dawley ,  Gerhard H. Olsen ,  Zhe Wang

IPC: H01L49/02 ,  H01L21/02

Abstract: A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (An+1BnX3n+1). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.

公开(公告)号：US10815569B2

公开(公告)日：2020-10-27

申请号：US15014568

申请日：2016-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu Wenxu ,  Yongsung Kim ,  Jaikwang Shin ,  Wooyoung Yang

IPC: C23C16/455 ,  C23C16/44 ,  C40B60/00

Abstract: A shower head of a combinatorial spatial atomic layer deposition (CS-ALD) apparatus may be provided. The shower head of the CS-ALD apparatus may include a plurality of shower blocks. Each of shower blocks may include a plurality of unit modules. Each of the shower blocks and each of the unit modules may be controlled independently from each other. Each of the plurality of unit modules may include a source gas injection nozzle, a purge gas injection nozzle, a reactant gas injection nozzle, and exhaust areas between the injection nozzles. The plurality of shower blocks may be separated from each other. Gas injection areas of the injection nozzles may be separated from the exhaust area.

公开(公告)号：US09583702B2

公开(公告)日：2017-02-28

申请号：US15011199

申请日：2016-01-29

Applicant: Samsung Electronics Co., Ltd. ,  The Board of Trustees of the Leland Stanford Junior University

Inventor： Yongsung Kim ,  Chiyui Ahn ,  Aditya Sood ,  Eric Pop ,  H.-S. Philip Wong ,  Kenneth E. Goodson ,  Scott Fong ,  Seunghyun Lee ,  Christopher M. Neumann ,  Mehdi Asheghi

IPC: H01L29/06 ,  H01L23/52 ,  H01L21/20 ,  H01L21/4763 ,  H01L45/00

CPC classification number: H01L45/128 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

Abstract: Provided is a phase change memory device including a graphene layer inserted between a lower electrode into which heat flows and a phase change material layer, to prevent the heat from being diffused to an outside so as to efficiently transfer the heat to the phase change material layer, and a method of fabricating the phase change memory device. The phase change memory device includes a lower electrode; an insulating layer formed to enclose the lower electrode; a graphene layer formed on the lower electrode; a phase change material layer formed on the graphene layer and the insulating layer; and an upper electrode formed on the phase change material layer. Since a phase of the phase change material layer is changed at a small amount of driving current, the phase change memory device is fabricated to have a high driving speed and a high integration.

Abstract translation: 提供了一种相变存储器件，其包括插入在热流过的下电极和相变材料层之间的石墨烯层，以防止热量扩散到外部，以便有效地将热传递到相变材料层 以及制造相变存储器件的方法。 相变存储器件包括下电极; 形成为封闭下电极的绝缘层; 形成在下电极上的石墨烯层; 形成在所述石墨烯层和所述绝缘层上的相变材料层; 以及形成在相变材料层上的上电极。 由于相变材料层的相位在少量驱动电流下变化，所以相变存储器件被制造成具有高驱动速度和高集成度。

公开(公告)号：US20160276585A1

公开(公告)日：2016-09-22

申请号：US15011199

申请日：2016-01-29

Applicant: Samsung Electronics Co., Ltd. ,  The Board of Trustees of the Leland Stanford Junior University

Inventor： Yongsung Kim ,  Chiyui Ahn ,  Aditya Sood ,  Eric Pop ,  H.S. Philip Wong ,  Kenneth E. Goodson ,  Scott Fong ,  Seunghyun Lee ,  Christopher M. Neumann ,  Mehdi Asheghi

IPC: H01L45/00

CPC classification number: H01L45/128 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

Abstract: Provided is a phase change memory device including a graphene layer inserted between a lower electrode into which heat flows and a phase change material layer, to prevent the heat from being diffused to an outside so as to efficiently transfer the heat to the phase change material layer, and a method of fabricating the phase change memory device. The phase change memory device includes a lower electrode; an insulating layer formed to enclose the lower electrode; a graphene layer formed on the lower electrode; a phase change material layer formed on the graphene layer and the insulating layer; and an upper electrode formed on the phase change material layer. Since a phase of the phase change material layer is changed at a small amount of driving current, the phase change memory device is fabricated to have a high driving speed and a high integration.

Abstract translation: 提供了一种相变存储器件，其包括插入在热流过的下电极和相变材料层之间的石墨烯层，以防止热量扩散到外部，以便有效地将热传递到相变材料层 以及制造相变存储器件的方法。 相变存储器件包括下电极; 形成为封闭下电极的绝缘层; 形成在下电极上的石墨烯层; 形成在所述石墨烯层和所述绝缘层上的相变材料层; 以及形成在相变材料层上的上电极。 由于相变材料层的相位在少量驱动电流下变化，所以相变存储器件被制造成具有高驱动速度和高集成度。