公开(公告)号：US12276026B2

公开(公告)日：2025-04-15

申请号：US18455941

申请日：2023-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bo-Eun Park ,  Jooho Lee ,  Yongsung Kim ,  Jeonggyu Song

IPC: C23C16/56 ,  C01G27/02 ,  C23C14/08 ,  C23C14/58 ,  C23C16/40 ,  C23C16/455 ,  H10B51/00 ,  H10B53/00

Abstract: A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfxA1-xO2 satisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfxA1-xO2 is in a range of 0.3 to 0.5.

公开(公告)号：US11761089B2

公开(公告)日：2023-09-19

申请号：US16827862

申请日：2020-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bo-Eun Park ,  Jooho Lee ,  Yongsung Kim ,  Jeonggyu Song

IPC: C23C16/40 ,  H10B51/00 ,  C23C16/56 ,  C23C16/455 ,  C23C14/58 ,  C01G27/02 ,  C23C14/08 ,  H10B53/00

CPC classification number: C23C16/56 ,  C01G27/02 ,  C23C14/08 ,  C23C14/5806 ,  C23C16/40 ,  C23C16/45525 ,  H10B51/00 ,  H10B53/00 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2004/24 ,  C01P2006/40

Abstract: A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfxA1-xO2 satisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfxA1-xO2 is in a range of 0.3 to 0.5.