公开(公告)号：US20230386841A1

公开(公告)日：2023-11-30

申请号：US18125936

申请日：2023-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyeyoung Kim ,  Woojin Jung ,  Soonmok Ha ,  Junsik Yu ,  Seungkyo Lee

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/66 ,  G03F7/20

CPC classification number: H01L21/0335 ,  H01L21/31144 ,  H01L21/0337 ,  H01L22/20 ,  G03F7/70533

Abstract: Provided is a method for forming a photoresist pattern, in which a silicon oxide layer is formed on a substrate. A first photoresist pattern, which contacts the silicon oxide layer, is formed on the silicon oxide layer. Entire-surface exposure is performed on the substrate on which the first photoresist pattern having a defect is formed. The first photoresist pattern is entirely removed by developing the first photoresist pattern, which has been subject to the entire-surface exposure. In addition, a second photoresist pattern is formed on the silicon oxide layer.

公开(公告)号：US10553582B2

公开(公告)日：2020-02-04

申请号：US15413466

申请日：2017-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoonjae Kim ,  Cheol Kim ,  Yong-Hoon Son ,  Jin-Hyuk Yoo ,  Woojin Jung

IPC: H01L29/78 ,  H01L27/088 ,  H01L21/8234 ,  H01L23/485 ,  H01L21/768 ,  H01L21/306 ,  H01L21/311 ,  H01L27/02 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/165

Abstract: A semiconductor device includes a substrate having an active pattern, a conductive pattern crossing the active pattern, a spacer structure on at least one side surface of the conductive pattern, and a capping structure on the conductive pattern. The capping structure includes a first capping pattern and a second capping pattern. The second capping pattern is disposed on a top surface of the first capping pattern and a top surface of the spacer structure.

公开(公告)号：US12101550B2

公开(公告)日：2024-09-24

申请号：US17860653

申请日：2022-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungwoo Shin ,  Kwanghyun Jang ,  Joonil Park ,  Jihee Yoon ,  Yujin Lim ,  Woojin Jung ,  Nari Choi ,  Junho Choi

IPC: H04N23/63 ,  H04N5/262 ,  H04N23/53 ,  H04N23/667

CPC classification number: H04N23/632 ,  H04N5/2628 ,  H04N23/53 ,  H04N23/635 ,  H04N23/667

Abstract: An electronic device and a method for controlling a screen thereof is provided. The electronic device includes a flexible display, an image sensor, at least one processor, and a memory, wherein the memory may store instructions that, when executed, cause the at least one processor to display a first preview image on the flexible display in response to activation of the image sensor, divide the flexible display into at least two regions in response to detecting a designated first event, display a second preview image in a first region among the divided regions, and display at least one captured image in a second region among the divided regions, wherein the second region may include at least one first control menu varying based on a property of the at least one captured image.

公开(公告)号：US20230411157A1

公开(公告)日：2023-12-21

申请号：US18136407

申请日：2023-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungkyo Lee ,  Jongin Kang ,  Gyeyoung Kim ,  Youngwoo Kim ,  Yonghan Park ,  Woojin Jung ,  Seunguk Han ,  Juyoung Huh

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/311 ,  H01L21/02 ,  H01L23/16 ,  H01L23/544

CPC classification number: H01L21/0337 ,  H01L21/0271 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/0228 ,  H01L23/16 ,  H01L23/544

Abstract: A method of manufacturing a semiconductor device includes: forming a mask layer, a first separation layer, a first mandrel layer, a second separation layer and a second mandrel layer on a substrate; patterning the second mandrel layer to form second mandrel patterns; forming first spacers on the second mandrel patterns; removing the second mandrel patterns; patterning the second separation layer and the first mandrel layer to form first structures; forming a second spacer layer on the first structures and the first separation layer; anisotropically etching the second spacer layer to form second spacers on the first structures, and to form first dummy patterns and align key patterns on the first structures; and spin-coating a spin-on hard mask layer on the first separation layer, wherein the spin-on hard mask layer covers the first structures, the first dummy patterns and the align key patterns.

公开(公告)号：US11662898B2

公开(公告)日：2023-05-30

申请号：US17168806

申请日：2021-02-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiyoung Kang ,  Hangyul Kim ,  Woojin Jung ,  Nari Choi

IPC: G06T5/20 ,  G06F3/04847 ,  H04N5/232 ,  G06V20/00 ,  G06F3/0482

CPC classification number: G06T5/20 ,  G06F3/04847 ,  G06V20/00 ,  H04N5/23229 ,  H04N5/232933 ,  G06F3/0482 ,  G06T2200/24

Abstract: An electronic device is provided. The electronic device includes a display, a processor functionally connected with the display, and a memory functionally connected with the processor. The memory stores instructions configured to, when executed, enable the processor to display a first image through the display, display one or more second images through the display while displaying the first image, select a third image from among the one or more second images, identify a value of at least one property of the third image, generate a filter for applying the value of the at least one property to an image, apply the value of the at least one property to the first image using the filter, display the first image, to which the value of the at least one property is applied, through the display, and store the filter in the memory.

公开(公告)号：US11159721B2

公开(公告)日：2021-10-26

申请号：US16790232

申请日：2020-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehan Lee ,  Jiyeon Kim ,  Woojin Jung ,  Nari Choi

IPC: H04N5/232 ,  G06F3/01

Abstract: An electronic device is provided. The electronic device includes a camera including a plurality of lenses, a display, and a processor, in which the processor is configured to display a plurality of icons corresponding to the plurality of lenses, based on first position information in a first photographing mode, and upon selection of a first icon by a first gesture from the plurality of icons in the first photographing mode, switch to a second photographing mode and display a zoom control region including a plurality of zoom levels having a first zoom level of a first lens corresponding to the first icon as a reference zoom level and the plurality of icons rearranged based on second position information corresponding to the plurality of zoom levels.

公开(公告)号：US09679821B2

公开(公告)日：2017-06-13

申请号：US15001729

申请日：2016-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin Jung ,  Sang-Ho Yun ,  Un Jeon ,  Byeongsoo Kim ,  Cheolhong Kim ,  Taehong Min ,  Joonsoo Park

IPC: H01L21/66 ,  H01L21/027 ,  G01B11/27 ,  G01B11/00 ,  G03F7/20

CPC classification number: H01L22/12 ,  G01B11/002 ,  G01B11/272 ,  G03F7/70633 ,  H01L21/0274

Abstract: Provided are methods of generating and revising overlay correction data, a method of performing a photolithography process using the overlay correction data, and a method of performing a photolithography process while revising the overlay correction data. The method of revising the overlay correction data includes forming a plurality of overlay keys on a first set of wafers using first overlay correction data, measuring first overlay keys formed on first overlay coordinates in a first shot area of a first wafer among the first set of wafers, generating first overlay error data, and revising primarily the first overlay correction data using the first overlay error data, measuring second overlay keys formed on second overlay coordinates in a second shot area of a second wafer among the first set of wafers, generating second overlay error data, and revising secondarily the primarily revised first overlay correction data using the second overlay error data, and measuring third overlay keys formed on third overlay coordinates in a third shot area of a third wafer among the first set of wafers, generating third overlay error data, revising tertiarily the secondarily revised first overlay correction data, and generating second overlay correction data. The first overlay coordinates, the second overlay coordinates, and the third overlay coordinates are mutually exclusive.