公开(公告)号：US11948956B2

公开(公告)日：2024-04-02

申请号：US16998202

申请日：2020-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungi Hong ,  Kook Tae Kim ,  Jingyun Kim ,  Soojin Hong

IPC: H01L27/146 ,  H01L21/265 ,  H01L21/266

CPC classification number: H01L27/1463 ,  H01L27/14685 ,  H01L21/26513 ,  H01L21/266 ,  H01L27/14614 ,  H01L27/1464 ,  H01L27/14641

Abstract: Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

公开(公告)号：US10784301B2

公开(公告)日：2020-09-22

申请号：US16400279

申请日：2019-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungi Hong ,  Kook Tae Kim ,  Jingyun Kim ,  Soojin Hong

IPC: H01L27/14 ,  H01L27/11 ,  H01L29/06 ,  H01L27/146 ,  H01L21/266 ,  H01L21/265 ,  H01L27/11517

Abstract: Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

公开(公告)号：US20200227449A1

公开(公告)日：2020-07-16

申请号：US16535762

申请日：2019-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kook Tae Kim ,  Jingyun Kim ,  Kyunghee Kim ,  Jaewoong Lee ,  Soojin Hong

IPC: H01L27/146

Abstract: An image includes a semiconductor substrate having a first surface and a second surface that face each other; a first photoelectric conversion region and a second photoelectric conversion region provided in the semiconductor substrate; a gapfill pattern that is interposed between the first and second photoelectric conversion regions and extends from the second surface toward the first surface, wherein a first side surface of the gapfill pattern faces the first photoelectric conversion region and a second side surface of the gapfill pattern faces the second photoelectric conversion region; and a conductive pattern disposed on the gapfill pattern. The conductive pattern includes a first portion disposed on the first side surface, a second portion disposed on the second side surface, and a connecting portion that is disposed on a top surface of the gapfill pattern and electrically connects the first portion to the second portion.

公开(公告)号：US20190055647A1

公开(公告)日：2019-02-21

申请号：US16104311

申请日：2018-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sukjin Chung ,  Bongjin Kuh ,  Kook Tae Kim ,  In-Sun Yi ,  Soojin Hong

IPC: C23C16/44 ,  C23C16/458

CPC classification number: C23C16/4408 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45578 ,  C23C16/4584

Abstract: Disclosed are a substrate processing apparatus and a method of cleaning the apparatus. The apparatus includes a process chamber, a support unit in the process chamber and configured to support a substrate, and a gas injection unit in the process chamber. The gas injection unit includes a first injection portion configured to inject a source gas, a second injection portion facing the first injection portion and configured to inject a reaction gas that reacts with the source gas, and a third injection portion configured to inject a cleaning gas that removes a reactant produced from the source gas and the reaction gas.