METHODS OF PREPARING CONDUCTORS, CONDUCTORS PREPARED THEREFROM, AND ELECTRONIC DEVICES INCLUDING THE SAME
    13.
    发明申请
    METHODS OF PREPARING CONDUCTORS, CONDUCTORS PREPARED THEREFROM, AND ELECTRONIC DEVICES INCLUDING THE SAME 审中-公开
    制备导体的方法,制备的导体和包括其的电子器件

    公开(公告)号:US20170040089A1

    公开(公告)日:2017-02-09

    申请号:US15215825

    申请日:2016-07-21

    CPC classification number: H01L51/5203 H01B1/08 H01L51/442 H05K3/00 Y02E10/549

    Abstract: A method of preparing a conductor including a first conductive layer including a plurality of metal oxide nanosheets, the method including: preparing a coating liquid including a plurality of metal oxide nanosheets, wherein an intercalant is attached to a surface of the nanosheets, applying the coating liquid to a substrate to provide a first conductive layer including a plurality of metal oxide nanosheets, and performing a surface treatment on the first conductive layer to remove at least a portion of the intercalant.

    Abstract translation: 一种制备导体的方法,所述导体包括包括多个金属氧化物纳米片的第一导电层,所述方法包括:制备包括多个金属氧化物纳米片的涂布液,其中插入剂附着在所述纳米片的表面上,涂覆所述涂层 液体提供到衬底以提供包括多个金属氧化物纳米片的第一导电层,并且在第一导电层上进行表面处理以去除至少一部分插入剂。

    ELECTRICALLY CONDUCTIVE THIN FILMS
    20.
    发明申请
    ELECTRICALLY CONDUCTIVE THIN FILMS 有权
    电导电薄膜

    公开(公告)号:US20160141067A1

    公开(公告)日:2016-05-19

    申请号:US14940223

    申请日:2015-11-13

    Abstract: An electrically conductive thin film including: a material including a compound represented by Chemical Formula 1 and having a layered crystal structure, MemAa   Chemical Formula 1 wherein Me is Al, Ga, In, Si, Ge, Sn, A is S, Se, Te, or a combination thereof, and m and a each are independently a number selected so that the compound of Chemical Formula 1 is neutral; and a dopant disposed in the compound of Chemical Formula 1, wherein the dopant is a metal dopant that is different from Me and has an oxidation state which is greater than an oxidation state of Me, a non-metal dopant having a greater number of valence electrons than a number of valence electrons of A in Chemical Formula 1, or a combination thereof, and wherein the compound of Chemical Formula 1 includes a chemical bond which includes a valence electron of an s orbital of Me.

    Abstract translation: 一种导电薄膜,包括:包含由化学式1表示并具有层状晶体结构的化合物的材料,其中Me为Al,Ga,In,Si,Ge,Sn,A的MemAa化学式1为S,Se,Te ,或它们的组合,m和a各自独立地选择为使化学式1的化合物为中性的数字; 以及配置在化学式1的化合物中的掺杂剂,其中所述掺杂剂是与Me不同的金属掺杂剂,并且具有大于Me的氧化态的氧化态,具有更大数量化合价的非金属掺杂剂 电子与化学式1中A的多价价电子或其组合,其中化学式1的化合物包括包含Me轨道的价电子的化学键。

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