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公开(公告)号：US20230337555A1
公开(公告)日：2023-10-19
申请号：US18338707
申请日：2023-06-21
发明人： Seyun KIM , Jinhong KIM , Soichiro MIZUSAKI , Jungho YOON , Youngjin CHO
IPC分类号： H01L47/00
CPC分类号： H10N70/231 , H10N70/8833 , H10B63/80
摘要： A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer including a first material and a second layer on the first layer and the second layer including a second material. The second material has a different valence than a valence of the first material. The first conductive element and the second conductive element are on the variable resistance layer and separated from each other to form an electric current path in the variable resistance layer in a direction perpendicular to a direction in which the first layer and the second layer are stacked.
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公开(公告)号：US20230269207A1
公开(公告)日：2023-08-24
申请号：US18132726
申请日：2023-04-10
发明人： Byoungho YUN , Jieun KIM , Jinhong KIM , Chansung KIM , Yeseul PARK , Heejeong BAE , Seunghoon LEE , Eunsang JEON , Soyeon JOO
IPC分类号： H04L51/046 , H04L12/18 , G06F3/0484 , G06F3/0482
CPC分类号： H04L51/046 , H04L12/1822 , G06F3/0484 , G06F3/0482
摘要： An electronic device and an operation method thereof are provided. The electronic device includes a communication interface, a memory storing one or more instructions, and a processor configured to execute the one or more instructions stored in the memory to recognize a program associated with content to be displayed, request, through the communication interface, a server for information about a chat room corresponding to a program identity (ID) of the recognized program, and output, based on the information about the chat room being obtained from the server in response to the request, a user interface to allow control as to whether to execute the chat room corresponding to the program ID of the recognized program while the content is being displayed.
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公开(公告)号：US20230086939A1
公开(公告)日：2023-03-23
申请号：US18058555
申请日：2022-11-23
发明人： Yumin KIM , Seyun KIM , Jinhong KIM , Soichiro MIZUSAKI , Youngjin CHO
摘要： A nonvolatile memory device and an operating method thereof are provided. The nonvolatile memory device includes a memory cell array including first to third memory cells sequentially arranged in a vertical stack structure and a control logic configured to apply a first non-selection voltage to the first memory cell, apply a second non-selection voltage different from the first non-selection voltage to the third memory cell, apply a selection voltage to the second memory cell, and select the second memory cell as a selection memory cell.
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公开(公告)号：US20230080072A1
公开(公告)日：2023-03-16
申请号：US17715389
申请日：2022-04-07
发明人： Jinhong KIM , Changsoo LEE , Yongsung KIM , Euncheol DO , Jooho LEE , Yong-Hee CHO
IPC分类号： H01L49/02 , H01L27/108
摘要： A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO2, and a leakage current reducing layer including GeO2 in the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.
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公开(公告)号：US20210217473A1
公开(公告)日：2021-07-15
申请号：US17146999
申请日：2021-01-12
发明人： Youngjin CHO , Jungho YOON , Seyun KIM , Jinhong KIM , Soichiro MIZUSAKI
摘要： A vertical nonvolatile memory device including a memory cell string using a resistance change material is disclosed. Each memory cell string of the nonvolatile memory device includes a semiconductor layer extending in a first direction and having a first surface opposite a second surface, a plurality of gates and a plurality of insulators alternately arranged in the first direction and extending in a second direction perpendicular to the first direction, a gate insulating layer extending in the first direction between the plurality of gates and the semiconductor layer and between the plurality of insulators and the semiconductor layer, and a dielectric film extending in the first direction on the surface of the semiconductor layer and having a plurality of movable oxygen vacancies distributed therein.
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公开(公告)号：US20230078373A1
公开(公告)日：2023-03-16
申请号：US17989085
申请日：2022-11-17
发明人： Seyun KIM , Jinhong KIM , Soichiro MIZUSAKI , Jungho YOON , Youngjin CHO
摘要： A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer and a second layer. The first layer is formed of a first material. The second layer is on the first layer and formed of a second material having a density different from a density of the first material. The first conductive element and a second conductive element are located on the variable resistance layer and spaced apart from each other in order to form a current path in the variable resistance layer. The current path is in a direction perpendicular to a direction in which the first layer and the second layer are stacked.
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公开(公告)号：US20190198244A1
公开(公告)日：2019-06-27
申请号：US16223209
申请日：2018-12-18
发明人： Jinhong KIM , Se Yun KIM
CPC分类号： H01G4/10 , H01G4/008 , H01L28/60 , H01L29/517
摘要： A dielectric including a composite including a metal oxide having a rocksalt crystal structure and a beryllium oxide, and a capacitor, a transistor, and an electronic device including the same.
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8.发明申请公开(公告)号：US20190037645A1
公开(公告)日：2019-01-31
申请号：US15868451
申请日：2018-01-11
发明人： Seyun KIM , Jinhong KIM , Haengdeog KOH , Doyoon KIM , Hajin KIM , Soichiro MIZUSAKI , Minjong BAE , Changsoo LEE
摘要： A The heating element structure includes: a conductive metal substrate; a heating layer spaced apart from the conductive metal substrate and configured to generate heat in response to an electrical signal; electrodes in contact with the heating layer and configured to provide the electrical signal to the heating layer; and a first insulating layer on the conductive metal substrate, the first insulating layer comprising a first matrix material and a particle, wherein a difference between a coefficient of thermal expansion (CTE) of the first matrix material and a coefficient of thermal expansion of the particle is about 4×10−6 per Kelvin or less.
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公开(公告)号：US20180077755A1
公开(公告)日：2018-03-15
申请号：US15680830
申请日：2017-08-18
发明人： Seyun KIM , Haengdeog KOH , Doyoon KIM , Jinhong KIM , Hajin KIM , Soichiro MIZUSAKI , Minjong BAE , Hiesang SOHN , Changsoo LEE
CPC分类号： H05B3/12 , H05B3/141 , H05B3/146 , H05B3/148 , H05B3/26 , H05B3/262 , H05B3/265 , H05B2203/013 , H05B2203/017 , H05B2214/04
摘要： A heating element includes a matrix; and a plurality of conductive fillers, wherein some of the plurality of conductive fillers include first nano-sheets and first metal media configured to reduce a contact resistance between the first nano-sheets.
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公开(公告)号：US20240243164A1
公开(公告)日：2024-07-18
申请号：US18409957
申请日：2024-01-11
发明人： Jooho LEE , Yong-Hee CHO , Jinhong KIM , Changsoo LEE , Sung HEO
CPC分类号： H01L28/65 , H01L28/75 , H01L28/91 , H10B12/315
摘要： Provided are a capacitor, a method of preparing the capacitor, and an electronic device including the capacitor, the capacitor including a lower electrode, an upper electrode spaced apart from the lower electrode, a dielectric between the lower electrode and the upper electrode, a first layer between the lower electrode and the dielectric, and a second layer between the dielectric and the upper electrode, wherein the dielectric comprises TiO2 having a rutile phase and is doped with magnesium, the first layer includes a material having a higher work function than that of a material included in the lower electrode, and the second layer includes a dielectric protective material.
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